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1. 发明授权

US08487297B2 Field effect transistor, method for manufacturing the same, and biosensor 失效
标题翻译：场效应晶体管，其制造方法和生物传感器
公开(公告)号：US08487297B2
公开(公告)日：2013-07-16
申请号：US13143256
申请日：2009-12-25
申请人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
发明人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
IPC分类号： H01L29/06
CPC分类号： G01N27/4146 , B82Y10/00 , H01L29/0665 , H01L51/0048 , H01L51/0516 , H01L51/0545 , H01L51/0558 , H01L51/107
摘要： Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
摘要翻译：公开了一种碳纳米管场效应晶体管，其稳定地表现出优异的导电性能。还公开了碳纳米管场效应晶体管的制造方法和包含碳纳米管场效应晶体管的生物传感器。首先，通过LOCOS法在硅衬底的接触区域上形成氧化硅膜。接下来，在硅衬底的沟道区上形成比接触区域上的氧化硅膜薄的绝缘膜。然后，在硅衬底上形成通道的碳纳米管之后，用保护膜覆盖碳纳米管。最后，形成源电极和漏电极，源电极和漏电极分别与碳纳米管电连接。由于作为通道的碳纳米管不被污染，所以通过这些方法制造的场效应晶体稳定地表现出优异的导电性能。

2. 发明申请

US20110042673A1 SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：传感器及其制造方法
公开(公告)号：US20110042673A1
公开(公告)日：2011-02-24
申请号：US12990717
申请日：2009-05-13
申请人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
发明人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
IPC分类号： H01L29/78 , H01L29/04 , H01L21/336
CPC分类号： G01N27/4145
摘要： Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.
摘要翻译：通过减少通道形状，反应场区域和位置的收缩，提供具有高灵敏度和高自由度的传感器。还提供了一种用于制造传感器的方法。传感器（10）包括：源极电极（15），漏极电极（14）和布置在氧化硅膜（12a，12b）上的栅电极; 布置在氧化硅膜（12a，12b）上并与源电极（15）和漏电极（14）电连接的通道（16）; 和设置在氧化硅膜（12a，12b）上的反应场（20）。反应场（20）形成在氧化硅膜（12a）上的位置，该位置不同于通道（16）的位置。利用这种结构，可以独立地选择通道（16）的形状和反应场（20）的面积。这使得传感器（10）具有高测量灵敏度和高度的布局自由度。

3. 发明授权

US08288804B2 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08288804B2
公开(公告)日：2012-10-16
申请号：US12991958
申请日：2009-05-22
申请人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
发明人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
IPC分类号： H01L29/72
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048
摘要： Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要翻译：提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。然后，在绝缘保护膜上形成源电极和漏电极。此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

4. 发明授权

US08236639B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08236639B2
公开(公告)日：2012-08-07
申请号：US13071083
申请日：2011-03-24
申请人： Hiroaki Kikuchi , Katsunori Kondo , Shigeru Shinohara , Osamu Takahashi , Tomoaki Yamabayashi
发明人： Hiroaki Kikuchi , Katsunori Kondo , Shigeru Shinohara , Osamu Takahashi , Tomoaki Yamabayashi
IPC分类号： H01L21/765 , H01L21/8239
CPC分类号： H01L29/7397 , H01L29/402 , H01L29/42376 , H01L29/66348
摘要： A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.
摘要翻译：半导体器件制造方法是形成半导体器件的方法，该半导体器件包括：单元部分，其包括在半导体层中形成沟槽型栅极的多个晶体管单元，并且扩散层形成在门和围绕电池部分的保护环部分。半导体器件制造方法包括在形成有栅极和扩散层的半导体层的表面上形成层间电介质膜; 通过回蚀来减小在电池部件中形成的层间绝缘膜的厚度; 在所述层间电介质膜中的所述扩散层上方的位置处形成具有孔或沟槽形状的接触部分; 并在层间辩证膜上形成金属膜。

5. 发明申请

US20110062419A1 FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20110062419A1
公开(公告)日：2011-03-17
申请号：US12991958
申请日：2009-05-22
申请人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
发明人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
IPC分类号： H01L29/06 , H01L21/336 , B82Y99/00 , B82Y40/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048
摘要： Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要翻译：提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。然后，在绝缘保护膜上形成源电极和漏电极。此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

6. 发明授权

US08698210B2 Sensor and method for manufacturing the same 有权
标题翻译：传感器及其制造方法
公开(公告)号：US08698210B2
公开(公告)日：2014-04-15
申请号：US12990717
申请日：2009-05-13
申请人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
发明人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
IPC分类号： G01N27/414
CPC分类号： G01N27/4145
摘要： Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.
摘要翻译：通过减少通道形状，反应场区域和位置的收缩，提供具有高灵敏度和高自由度的传感器。还提供了一种用于制造传感器的方法。传感器（10）包括：源极电极（15），漏极电极（14）和布置在氧化硅膜（12a，12b）上的栅电极; 布置在氧化硅膜（12a，12b）上并与源电极（15）和漏电极（14）电连接的通道（16）; 和设置在氧化硅膜（12a，12b）上的反应场（20）。反应场（20）形成在氧化硅膜（12a）上的位置，该位置不同于通道（16）的位置。利用这种结构，可以独立地选择通道（16）的形状和反应场（20）的面积。这使得传感器（10）具有高测量灵敏度和高度的布局自由度。

7. 发明申请

US20110291075A1 FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND BIOSENSOR 失效
标题翻译：场效应晶体管，其制造方法和生物传感器
公开(公告)号：US20110291075A1
公开(公告)日：2011-12-01
申请号：US13143256
申请日：2009-12-25
申请人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
发明人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
IPC分类号： H01L29/772 , H01L21/336 , B82Y40/00
CPC分类号： G01N27/4146 , B82Y10/00 , H01L29/0665 , H01L51/0048 , H01L51/0516 , H01L51/0545 , H01L51/0558 , H01L51/107
摘要： Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
摘要翻译：公开了一种碳纳米管场效应晶体管，其稳定地表现出优异的导电性能。还公开了碳纳米管场效应晶体管的制造方法和包含碳纳米管场效应晶体管的生物传感器。首先，通过LOCOS法在硅衬底的接触区域上形成氧化硅膜。接下来，在硅衬底的沟道区上形成比接触区域上的氧化硅膜薄的绝缘膜。然后，在硅衬底上形成通道的碳纳米管之后，用保护膜覆盖碳纳米管。最后，形成源电极和漏电极，源电极和漏电极分别与碳纳米管电连接。由于作为通道的碳纳米管不被污染，所以通过这些方法制造的场效应晶体稳定地表现出优异的导电性能。

8. 发明授权

US08148213B2 Method of producing a biosensor 失效
标题翻译：生物传感器的制造方法
公开(公告)号：US08148213B2
公开(公告)日：2012-04-03
申请号：US13028684
申请日：2011-02-16
申请人： Hiroaki Kikuchi , Tomoaki Yamabayashi , Osamu Takahashi
发明人： Hiroaki Kikuchi , Tomoaki Yamabayashi , Osamu Takahashi
IPC分类号： H01L21/00 , H01L21/8232 , H01L21/335 , H01L21/84
CPC分类号： G01N27/4145
摘要： A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on the other surface of the silicon substrate; forming a source electrode, a drain electrode, and a channel on the first silicon oxide film, the channel connecting the source electrode and the drain electrode; and removing the polysilicon film.
摘要翻译：制造生物传感器的方法包括：在硅衬底的一个表面上形成第一氧化硅膜和多晶硅膜的叠层体; 在硅衬底的另一个表面上形成第二氧化硅膜; 在所述第一氧化硅膜上形成源电极，漏电极和沟道，所述沟道连接所述源电极和所述漏电极; 并去除多晶硅膜。

9. 发明申请

US20110248698A1 BIOSENSOR AND DETECTION METHOD OF TARGET SUBSTANCE 审中-公开
标题翻译：目标物质的生物传感器和检测方法
公开(公告)号：US20110248698A1
公开(公告)日：2011-10-13
申请号：US13081003
申请日：2011-04-06
申请人： Hiroaki Kikuchi , Tomoaki Yamabayashi , Osamu Takahashi
发明人： Hiroaki Kikuchi , Tomoaki Yamabayashi , Osamu Takahashi
IPC分类号： G01R19/00 , H01L29/66
CPC分类号： G01N27/4145 , G01N27/4146
摘要： A biosensor includes at least two field effect transistor devices, each including a silicon substrate, a silicon oxide film formed on a surface of the silicon substrate, a source electrode disposed on the silicon oxide film, a drain electrode disposed on the silicon oxide film, a channel for connecting the source electrode and the drain electrode, and a gate electrode capable of controlling the channel, wherein one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is to be immobilized, and the other one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is not to be immobilized.
摘要翻译：生物传感器包括至少两个场效应晶体管器件，每个场效应晶体管器件包括硅衬底，形成在硅衬底的表面上的氧化硅膜，设置在氧化硅膜上的源电极，设置在氧化硅膜上的漏电极，用于连接源电极和漏极的沟道和能够控制沟道的栅电极，其中至少两个场效应晶体管器件中的一个被提供有待固定目标识别分子的反应场，并且所述至少两个场效应晶体管器件中的另一个设置有不固定目标识别分子的反应场。

10. 发明授权

US08710554B2 Biosensor kit 有权
标题翻译：生物传感器套件
公开(公告)号：US08710554B2
公开(公告)日：2014-04-29
申请号：US14031948
申请日：2013-09-19
申请人： Mitsuru Sakamoto , Hirohiko Urushiyama , Hiroaki Kikuchi , Tomoaki Yamabayashi
发明人： Mitsuru Sakamoto , Hirohiko Urushiyama , Hiroaki Kikuchi , Tomoaki Yamabayashi
IPC分类号： G01N27/414 , H01L23/26
CPC分类号： G01N27/00 , G01N27/4145
摘要： Disclosed are: a biosensor kit in which a biosensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted.
摘要翻译：公开了一种生物传感器套件，其中利用场效应晶体管的生物传感器在储存或运输过程中不会劣化; 以及配备有生物传感器芯片的感兴趣物质的检测系统。生物传感器套件包括可以定量测量感兴趣的物质的生物传感器芯片和可以气密地密封生物传感器芯片并且由包括金属膜的包装材料构成的封装。生物传感器芯片可以基于场效应晶体管中产生的电流的值定量地测量物质，当物质与能够识别物质的分子反应并固定在与场效应晶体管连接的反应场时。生物传感器芯片包括场效应晶体管和其上安装有场效应晶体管的安装基板。

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