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1. 发明授权

US08236639B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08236639B2
公开(公告)日：2012-08-07
申请号：US13071083
申请日：2011-03-24
申请人： Hiroaki Kikuchi , Katsunori Kondo , Shigeru Shinohara , Osamu Takahashi , Tomoaki Yamabayashi
发明人： Hiroaki Kikuchi , Katsunori Kondo , Shigeru Shinohara , Osamu Takahashi , Tomoaki Yamabayashi
IPC分类号： H01L21/765 , H01L21/8239
CPC分类号： H01L29/7397 , H01L29/402 , H01L29/42376 , H01L29/66348
摘要： A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.
摘要翻译：半导体器件制造方法是形成半导体器件的方法，该半导体器件包括：单元部分，其包括在半导体层中形成沟槽型栅极的多个晶体管单元，并且扩散层形成在门和围绕电池部分的保护环部分。半导体器件制造方法包括在形成有栅极和扩散层的半导体层的表面上形成层间电介质膜; 通过回蚀来减小在电池部件中形成的层间绝缘膜的厚度; 在所述层间电介质膜中的所述扩散层上方的位置处形成具有孔或沟槽形状的接触部分; 并在层间辩证膜上形成金属膜。

2. 发明申请

US20110062419A1 FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20110062419A1
公开(公告)日：2011-03-17
申请号：US12991958
申请日：2009-05-22
申请人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
发明人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
IPC分类号： H01L29/06 , H01L21/336 , B82Y99/00 , B82Y40/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048
摘要： Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要翻译：提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。然后，在绝缘保护膜上形成源电极和漏电极。此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

3. 发明授权

US08288804B2 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08288804B2
公开(公告)日：2012-10-16
申请号：US12991958
申请日：2009-05-22
申请人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
发明人： Hiroaki Kikuchi , Osamu Takahashi , Katsunori Kondo , Tomoaki Yamabayashi , Kunio Ogasawara , Tadashi Ishigaki , Yutaka Hienuki , Motonori Nakamura , Agus Subagyo
IPC分类号： H01L29/72
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048
摘要： Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.
摘要翻译：提供一种碳纳米管场效应晶体管的制造方法，其制造具有优异的稳定导电性的碳纳米管场效应晶体管，具有优异的再现性。在将碳纳米管设置在基板上的通道之后，碳纳米管被绝缘保护膜覆盖。然后，在绝缘保护膜上形成源电极和漏电极。此时，在保护膜上形成接触孔，碳纳米管与源电极和漏极连接。然后，在绝缘保护膜，源电极和漏电极上依次形成布线保护膜，导电膜和等离子体CVD膜。在这样制造的场效应晶体管中，由于作为沟道的碳纳米管不被污染而不被损坏，所以表现出优异的稳定的导电性。

4. 发明授权

US08487297B2 Field effect transistor, method for manufacturing the same, and biosensor 失效
标题翻译：场效应晶体管，其制造方法和生物传感器
公开(公告)号：US08487297B2
公开(公告)日：2013-07-16
申请号：US13143256
申请日：2009-12-25
申请人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
发明人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
IPC分类号： H01L29/06
CPC分类号： G01N27/4146 , B82Y10/00 , H01L29/0665 , H01L51/0048 , H01L51/0516 , H01L51/0545 , H01L51/0558 , H01L51/107
摘要： Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
摘要翻译：公开了一种碳纳米管场效应晶体管，其稳定地表现出优异的导电性能。还公开了碳纳米管场效应晶体管的制造方法和包含碳纳米管场效应晶体管的生物传感器。首先，通过LOCOS法在硅衬底的接触区域上形成氧化硅膜。接下来，在硅衬底的沟道区上形成比接触区域上的氧化硅膜薄的绝缘膜。然后，在硅衬底上形成通道的碳纳米管之后，用保护膜覆盖碳纳米管。最后，形成源电极和漏电极，源电极和漏电极分别与碳纳米管电连接。由于作为通道的碳纳米管不被污染，所以通过这些方法制造的场效应晶体稳定地表现出优异的导电性能。

5. 发明申请

US20110042673A1 SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：传感器及其制造方法
公开(公告)号：US20110042673A1
公开(公告)日：2011-02-24
申请号：US12990717
申请日：2009-05-13
申请人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
发明人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
IPC分类号： H01L29/78 , H01L29/04 , H01L21/336
CPC分类号： G01N27/4145
摘要： Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.
摘要翻译：通过减少通道形状，反应场区域和位置的收缩，提供具有高灵敏度和高自由度的传感器。还提供了一种用于制造传感器的方法。传感器（10）包括：源极电极（15），漏极电极（14）和布置在氧化硅膜（12a，12b）上的栅电极; 布置在氧化硅膜（12a，12b）上并与源电极（15）和漏电极（14）电连接的通道（16）; 和设置在氧化硅膜（12a，12b）上的反应场（20）。反应场（20）形成在氧化硅膜（12a）上的位置，该位置不同于通道（16）的位置。利用这种结构，可以独立地选择通道（16）的形状和反应场（20）的面积。这使得传感器（10）具有高测量灵敏度和高度的布局自由度。

6. 发明授权

US08698210B2 Sensor and method for manufacturing the same 有权
标题翻译：传感器及其制造方法
公开(公告)号：US08698210B2
公开(公告)日：2014-04-15
申请号：US12990717
申请日：2009-05-13
申请人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
发明人： Tomoaki Yamabayashi , Osamu Takahashi , Katsunori Kondo , Hiroaki Kikuchi
IPC分类号： G01N27/414
CPC分类号： G01N27/4145
摘要： Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.
摘要翻译：通过减少通道形状，反应场区域和位置的收缩，提供具有高灵敏度和高自由度的传感器。还提供了一种用于制造传感器的方法。传感器（10）包括：源极电极（15），漏极电极（14）和布置在氧化硅膜（12a，12b）上的栅电极; 布置在氧化硅膜（12a，12b）上并与源电极（15）和漏电极（14）电连接的通道（16）; 和设置在氧化硅膜（12a，12b）上的反应场（20）。反应场（20）形成在氧化硅膜（12a）上的位置，该位置不同于通道（16）的位置。利用这种结构，可以独立地选择通道（16）的形状和反应场（20）的面积。这使得传感器（10）具有高测量灵敏度和高度的布局自由度。

7. 发明申请

US20110291075A1 FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND BIOSENSOR 失效
标题翻译：场效应晶体管，其制造方法和生物传感器
公开(公告)号：US20110291075A1
公开(公告)日：2011-12-01
申请号：US13143256
申请日：2009-12-25
申请人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
发明人： Agus Subagyo , Motonori Nakamura , Tomoaki Yamabayashi , Osamu Takahashi , Hiroaki Kikuchi , Katsunori Kondo
IPC分类号： H01L29/772 , H01L21/336 , B82Y40/00
CPC分类号： G01N27/4146 , B82Y10/00 , H01L29/0665 , H01L51/0048 , H01L51/0516 , H01L51/0545 , H01L51/0558 , H01L51/107
摘要： Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
摘要翻译：公开了一种碳纳米管场效应晶体管，其稳定地表现出优异的导电性能。还公开了碳纳米管场效应晶体管的制造方法和包含碳纳米管场效应晶体管的生物传感器。首先，通过LOCOS法在硅衬底的接触区域上形成氧化硅膜。接下来，在硅衬底的沟道区上形成比接触区域上的氧化硅膜薄的绝缘膜。然后，在硅衬底上形成通道的碳纳米管之后，用保护膜覆盖碳纳米管。最后，形成源电极和漏电极，源电极和漏电极分别与碳纳米管电连接。由于作为通道的碳纳米管不被污染，所以通过这些方法制造的场效应晶体稳定地表现出优异的导电性能。

8. 发明授权

US11569373B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11569373B2
公开(公告)日：2023-01-31
申请号：US17337662
申请日：2021-06-03
申请人： Masatoshi Yatago , Naohiro Shiraishi , Katsunori Kondo , Noriyoshi Watanabe
发明人： Masatoshi Yatago , Naohiro Shiraishi , Katsunori Kondo , Noriyoshi Watanabe
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/66
摘要： A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.

9. 发明申请

US20070042303A1 Origin restoration mechanism for operating member and multi-direction input apparatus using the same 有权
标题翻译：用于操作构件和使用其的多方向输入装置的原点恢复机构
公开(公告)号：US20070042303A1
公开(公告)日：2007-02-22
申请号：US11485419
申请日：2006-07-13
申请人： Noboru Wakitani , Junji Takamoto , Daisuke Kumazaki , Katsunori Kondo
发明人： Noboru Wakitani , Junji Takamoto , Daisuke Kumazaki , Katsunori Kondo
IPC分类号： F23D11/36
CPC分类号： G05G5/05 , G05G9/047 , H01H15/16 , H01H19/20 , H01H19/585 , H01H25/008 , Y10T74/1585 , Y10T74/20201 , Y10T74/20762 , Y10T74/20852
摘要： An origin restoration mechanism 500 includes a base unit 510 arranged in X-Y directions to cross the axis of an operating member body 210 of an operating member 200, a link mechanism 520 arranged on the upper surface of the base unit 510 and a pair of urging means 530 for urging a rotary unit 521 of the link mechanism 520, wherein the link mechanism 520 includes the rotary unit 521 arranged around the axis of the operating member body 210 and four movable members 522 arranged equidistantly around the axis of the operating member body 210 inside the rotary unit 520 on the surface of the base unit 510 and having rear ends coupled rotatably to the rotary unit 520. By the urging forces of the urging means 530 applied through the rotary unit 520, the portions inside of the distal end of the four movable members 522 come into contact with different portions, respectively, of the outer surface of the operating member body 210 located at the original position C thereby to hold the operating member body 210.
摘要翻译：原点恢复机构500包括：基本单元510，其布置在XY方向上以跨过操作构件200的操作构件主体210的轴线;布置在基座单元510的上表面上的连杆机构520;以及一对施力装置 530，用于推动连杆机构520的旋转单元521，其中连杆机构520包括围绕操作构件主体210的轴线布置的旋转单元521和围绕操作构件主体210的轴线等距离地设置的四个可移动构件522 旋转单元520在基座单元510的表面上并且具有可旋转地联接到旋转单元520的后端。通过施加在旋转单元520上的施力装置530的作用力，四个可移动构件522的远端内侧的部分分别与位于操作构件主体210的外表面的不同部分相接触原始位置C由此保持操作构件主体210。

10. 发明授权

US08186239B2 Origin restoration mechanism for operating member and multi-direction input apparatus using the same 有权
标题翻译：用于操作构件和使用其的多方向输入装置的原点恢复机构
公开(公告)号：US08186239B2
公开(公告)日：2012-05-29
申请号：US11485419
申请日：2006-07-13
申请人： Noboru Wakitani , Junji Takamoto , Daisuke Kumazaki , Katsunori Kondo
发明人： Noboru Wakitani , Junji Takamoto , Daisuke Kumazaki , Katsunori Kondo
IPC分类号： G05G9/047 , G05G1/00 , H01H13/70 , H01H25/00 , H01H25/04
CPC分类号： G05G5/05 , G05G9/047 , H01H15/16 , H01H19/20 , H01H19/585 , H01H25/008 , Y10T74/1585 , Y10T74/20201 , Y10T74/20762 , Y10T74/20852
摘要： An origin restoration mechanism includes a base unit arranged in X-Y directions to cross the axis of an operating member body of an operating member, a link mechanism arranged on the upper surface of the base unit and a pair of urging devices for urging a rotary unit of the link mechanism. The link mechanism includes the rotary unit arranged around the axis of the operating member body and our movable members arranged equidistantly around the axis of the operating member body inside the rotary unit on the surface of the base unit and having rear ends coupled rotatably to the rotary unit. Via urging forces, the portions inside of the distal end of the four movable members come into contact with different portions, respectively, of the outer surface of the operating member body located at the original position C, to hold the operating member body.
摘要翻译：原点恢复机构包括：基本单元，其布置在XY方向上，以跨过操作构件的操作构件主体的轴线;布置在基座单元的上表面上的连杆机构;以及一对推动装置，链接机制。连杆机构包括围绕操作构件主体的轴线布置的旋转单元和我们的可移动构件，其在基座单元的表面上围绕旋转单元的操作构件主体的轴线等距离地布置，并且具有可旋转地联接到旋转件单元。通过推动力，四个可移动部件的远端内部的部分分别与位于原始位置C的操作部件主体的外表面的不同部分接触，以保持操作部件主体。

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