会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for forming MEMS variable capacitors
    • MEMS可变电容器的形成方法
    • US08658512B2
    • 2014-02-25
    • US13382335
    • 2010-07-01
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • H01L21/20
    • H01G5/011H01G5/18
    • A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate (40) comprising a first layer (41), a second layer (42), and a third layer (43) stacked on top of one another; and etching a plurality of first trenches (70) through the third layer (43), through the second layer (42), and into the first layer (41) using a single etching mask. Etching the plurality of first trenches (70) defines a plurality of first fingers (51) in the third layer (43) and a plurality of second fingers (52) in the first layer (41). By using a single mask, the process is self-aligned. The method further comprises removing the second layer (42) in a first region where the plurality of first trenches (70) are provided, thereby forming a spacing or gap between the plurality of first fingers (51) and the plurality of second fingers (52).
    • 一种用于制造面外可变重叠MEMS电容器的方法包括:提供包括第一层(41),第二层(42)和堆叠在彼此顶部的第三层(43)的衬底(40) ; 以及通过所述第三层(43)通过所述第二层(42)蚀刻多个第一沟槽(70),并使用单个蚀刻掩模蚀刻到所述第一层(41)中。 蚀刻多个第一沟槽(70)在第三层(43)中限定多个第一指状物(51)和第一层(41)中的多个第二指状物(52)。 通过使用单个掩模,该过程是自对准的。 该方法还包括在设置有多个第一沟槽(70)的第一区域中移除第二层(42),从而在多个第一指状物(51)和多个第二指状物(52)之间形成间隔或间隙 )。
    • 2. 发明申请
    • Method for Forming MEMS Variable Capacitors
    • MEMS可变电容器的形成方法
    • US20120171836A1
    • 2012-07-05
    • US13382335
    • 2010-07-01
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • Tom SterkenGeert AltenaMartijn GoedbloedRobert Puers
    • H01L21/02
    • H01G5/011H01G5/18
    • A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate (40) comprising a first layer (41), a second layer (42), and a third layer (43) stacked on top of one another; and etching a plurality of first trenches (70) through the third layer (43), through the second layer (42), and into the first layer (41) using a single etching mask. Etching the plurality of first trenches (70) defines a plurality of first fingers (51) in the third layer (43) and a plurality of second fingers (52) in the first layer (41). By using a single mask, the process is self-aligned. The method further comprises removing the second layer (42) in a first region where the plurality of first trenches (70) are provided, thereby forming a spacing or gap between the plurality of first fingers (51) and the plurality of second fingers (52).
    • 一种用于制造面外可变重叠MEMS电容器的方法包括:提供包括第一层(41),第二层(42)和堆叠在彼此顶部的第三层(43)的衬底(40) ; 以及通过所述第三层(43)通过所述第二层(42)蚀刻多个第一沟槽(70),并使用单个蚀刻掩模蚀刻到所述第一层(41)中。 蚀刻多个第一沟槽(70)在第三层(43)中限定多个第一指状物(51)和第一层(41)中的多个第二指状物(52)。 通过使用单个掩模,该过程是自对准的。 该方法还包括在设置有多个第一沟槽(70)的第一区域中移除第二层(42),从而在多个第一指状物(51)和多个第二指状物(52)之间形成间隔或间隙 )。
    • 6. 发明申请
    • METHOD FOR PRECISELY CONTROLLED MASKED ANODIZATION
    • 用于精确控制的掩蔽阳极化方法
    • US20120132529A1
    • 2012-05-31
    • US13086735
    • 2011-04-14
    • Joseph ZekryHendrikus TilmansChris Van HoofRobert Puers
    • Joseph ZekryHendrikus TilmansChris Van HoofRobert Puers
    • C25D11/02C25D11/18C25D5/02
    • C25D11/12C25D11/022C25D11/08C25D11/10C25D11/18C25D11/24C25D11/246
    • The present invention is related to a method for masked anodization of an anodizable layer on a substrate, for example an aluminum layer present on a sacrificial layer, wherein the sacrificial layer needs to be removed from a cavity comprising a Micro or Nano Electromechanical System (MEMS or NEMS). Anodization of an Al layer leads to the formation of elongate pores, through which the sacrificial layer can be removed. According to the method of the invention, the anodization of the Al layer is done with the help of a first mask which defines the area to be anodized, and a second mask which defines a second area to be anodized, said second area surrounding the first area. Anodization of the areas defined by the first and second mask leads to the formation of an anodized structure in the form of a closed ring around the first area, which forms a barrier against unwanted lateral anodization in the first area.
    • 本发明涉及一种用于掩模阳极氧化底物上阳极氧化层的方法,例如存在于牺牲层上的铝层,其中牺牲层需要从包括微型或纳米机电系统(MEMS) 或NEMS)。 Al层的阳极化导致形成细长的孔,通过该细孔可以去除牺牲层。 根据本发明的方法,借助于限定待阳极化区域的第一掩模和限定要被阳极氧化的第二区域的第二掩模来进行Al层的阳极氧化,所述第二区域包围第一区域 区。 由第一和第二掩模限定的区域的阳极化导致形成围绕第一区域的闭环形式的阳极氧化结构,其在第一区域中形成防止不希望的横向阳极氧化的阻挡层。