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1. 发明申请

US20120132529A1 METHOD FOR PRECISELY CONTROLLED MASKED ANODIZATION 审中-公开
标题翻译：用于精确控制的掩蔽阳极化方法
公开(公告)号：US20120132529A1
公开(公告)日：2012-05-31
申请号：US13086735
申请日：2011-04-14
申请人： Joseph Zekry , Hendrikus Tilmans , Chris Van Hoof , Robert Puers
发明人： Joseph Zekry , Hendrikus Tilmans , Chris Van Hoof , Robert Puers
IPC分类号： C25D11/02 , C25D11/18 , C25D5/02
CPC分类号： C25D11/12 , C25D11/022 , C25D11/08 , C25D11/10 , C25D11/18 , C25D11/24 , C25D11/246
摘要： The present invention is related to a method for masked anodization of an anodizable layer on a substrate, for example an aluminum layer present on a sacrificial layer, wherein the sacrificial layer needs to be removed from a cavity comprising a Micro or Nano Electromechanical System (MEMS or NEMS). Anodization of an Al layer leads to the formation of elongate pores, through which the sacrificial layer can be removed. According to the method of the invention, the anodization of the Al layer is done with the help of a first mask which defines the area to be anodized, and a second mask which defines a second area to be anodized, said second area surrounding the first area. Anodization of the areas defined by the first and second mask leads to the formation of an anodized structure in the form of a closed ring around the first area, which forms a barrier against unwanted lateral anodization in the first area.
摘要翻译：本发明涉及一种用于掩模阳极氧化底物上阳极氧化层的方法，例如存在于牺牲层上的铝层，其中牺牲层需要从包括微型或纳米机电系统（MEMS）或NEMS）。 Al层的阳极化导致形成细长的孔，通过该细孔可以去除牺牲层。根据本发明的方法，借助于限定待阳极化区域的第一掩模和限定要被阳极氧化的第二区域的第二掩模来进行Al层的阳极氧化，所述第二区域包围第一区域区。由第一和第二掩模限定的区域的阳极化导致形成围绕第一区域的闭环形式的阳极氧化结构，其在第一区域中形成防止不希望的横向阳极氧化的阻挡层。

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