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1. 发明授权

US08896210B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08896210B2
公开(公告)日：2014-11-25
申请号：US13705712
申请日：2012-12-05
申请人： Tokyo Electron Limited , Tocalo Co., Ltd.
发明人： Masaru Nishino , Masatsugu Makabe , Nobuyuki Nagayama , Tatsuya Handa , Ryotaro Midorikawa , Keigo Kobayashi , Tetsuya Niya
IPC分类号： H01J7/24 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/32477 , H01J37/32495
摘要： A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.
摘要翻译：等离子体处理装置包括处理室; 用作安装台的下电极，用于安装目标物体; 以及设置成与下电极相对的上电极或天线电极。该装置还包括用于将包含含卤素气体和氧气的气体引入处理室的气体供给源和用于将高频电力施加到上部电极中的至少一个的高频电源，天线电极或下电极。在暴露于等离子体的处理室的内表面中，目标物体的安装位置与上部电极或天线电极之间的至少一部分或全部表面; 或上部电极或天线电极的至少一部分或全部表面涂覆有氟化合物。

2. 发明授权

US11810792B2 Etching method and substrate processing apparatus 有权
公开(公告)号：US11810792B2
公开(公告)日：2023-11-07
申请号：US17447306
申请日：2021-09-10
申请人： Tokyo Electron Limited
发明人： Takanori Eto , Masatsugu Makabe , Sho Saitoh
IPC分类号： H01L21/311 , H01J37/32 , H01L21/768
CPC分类号： H01L21/31116 , H01J37/32449 , H01J2237/334 , H01L21/76802
摘要： An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.

3. 发明申请

US20200243355A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20200243355A1
公开(公告)日：2020-07-30
申请号：US16774066
申请日：2020-01-28
申请人： Tokyo Electron Limited
发明人： Masatsugu Makabe
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32
摘要： A substrate processing apparatus includes a placing table, having a placing surface on which a processing target substrate is placed, provided with a gas supply line through which a heat transfer gas is supplied into a gap between the processing target substrate and the placing surface; and a gas supply system configured to generate the heat transfer gas to be supplied into the gap between the processing target substrate and the placing surface through the gas supply line by mixing a heat transfer gas having a relatively low temperature and a heat transfer gas having a relatively high temperature.

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