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1. 发明申请

US20210063247A1 THERMOCOUPLE STRUCTURE, HEAT TREATMENT APPARATUS, AND METHOD OF MANUFACTURING THERMOCOUPLE STRUCTURE 有权
公开(公告)号：US20210063247A1
公开(公告)日：2021-03-04
申请号：US17007009
申请日：2020-08-31
申请人： Tokyo Electron Limited , Furuya Metal Co.,Ltd.
发明人： Hisashi INOUE , Masahiro KOBAYASHI , Yasuaki KIKUCHI , Tatsuya YAMAGUCHI , Koji YOSHII , Kensuke MORITA , Jun ITABASHI
IPC分类号： G01K7/02 , G01K1/08 , H01L27/16
摘要： A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.

2. 发明申请

US20200026314A1 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD 审中-公开
公开(公告)号：US20200026314A1
公开(公告)日：2020-01-23
申请号：US16515144
申请日：2019-07-18
申请人： Tokyo Electron Limited
发明人： Tatsuya YAMAGUCHI
IPC分类号： G05D23/19 , F27D21/00
摘要： A heat treatment apparatus includes: a vertically-extended processing container configured to accommodate a substrate; a gas supply including a gas supply pipe that extends along an inner wall surface of the processing container in a vertical direction; a heater having a heat insulating material provided around the processing container, and a heating element provided along the inner wall surface of the heat insulating material; and a cooler having a fluid flow path formed outside the heat insulating material, and a blowing-out hole penetrating the heat insulating material and configured to blow out a cooling fluid toward the gas supply pipe, the blowing-out hole having one end that communicates with the fluid flow path and a remaining end that communicates with a space between the processing container and the heat insulating material. A plurality of blowing-out holes is provided in the gas supply pipe in a longitudinal direction.

3. 发明申请

US20190393083A1 Method of Manufacturing Semiconductor Device 审中-公开
公开(公告)号：US20190393083A1
公开(公告)日：2019-12-26
申请号：US16563007
申请日：2019-09-06
申请人： TOKYO ELECTRON LIMITED
发明人： Tatsuya YAMAGUCHI , Reiji NIINO , Hiroyuki HASHIMOTO , Syuji NOZAWA , Makoto FUJIKAWA
IPC分类号： H01L21/768 , H01L21/311 , H01L21/67
摘要： A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

4. 发明申请

US20190139756A1 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device, and Storage Medium 审中-公开
公开(公告)号：US20190139756A1
公开(公告)日：2019-05-09
申请号：US16181819
申请日：2018-11-06
申请人： TOKYO ELECTRON LIMITED
发明人： Tatsuya YAMAGUCHI
IPC分类号： H01L21/02 , H01L21/67 , H01L21/687 , B05B1/24 , B05B1/30 , B08B7/00
摘要： A substrate processing apparatus for processing a substrate to manufacture a semiconductor device, includes: a mounting table on which a substrate is mounted; a first liquid supply part that supplies a first liquid to form a polymer film having a urea bond on the substrate mounted on the mounting table; a second liquid supply part that supplies a second liquid reacting with the first liquid; and a nozzle part provided at an end portion of a liquid flow path where the first liquid supplied from the first liquid supply part and the second liquid supplied from the second liquid supply part are joined with each other to obtain a mixed solution, and configured to supply the mixed solution to the substrate to form the polymer film on a surface of the substrate, wherein the polymer film is temporarily used for manufacturing the semiconductor device and is subsequently removed by depolymerization.

5. 发明申请

US20190122883A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190122883A1
公开(公告)日：2019-04-25
申请号：US16165228
申请日：2018-10-19
申请人： TOKYO ELECTRON LIMITED
发明人： Tatsuya YAMAGUCHI , Reiji NIINO , Syuji NOZAWA , Makoto FUJIKAWA
IPC分类号： H01L21/02 , H01L21/027
摘要： There is provided a method of manufacturing a semiconductor device by performing a process on a substrate, comprising: forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate; subsequently, performing a step of changing a sectional shape of the sacrificial film and a step of adjusting a film thickness of the sacrificial film by heating the sacrificial film; subsequently, performing the process on the surface of the substrate; and subsequently, removing the sacrificial film.

6. 发明申请

US20180264516A1 FILM FORMING APPARATUS, FILM FORMING METHOD, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20180264516A1
公开(公告)日：2018-09-20
申请号：US15915392
申请日：2018-03-08
申请人： TOKYO ELECTRON LIMITED
发明人： Makoto FUJIKAWA , Reiji NIINO , Hiroyuki HASHIMOTO , Tatsuya YAMAGUCHI , Syuji NOZAWA
IPC分类号： B05D1/00
CPC分类号： B05D1/60 , B05D1/002 , C23C16/4411 , C23C16/45523 , C23C16/45574 , C23C16/45578 , C23C16/45591 , C23C16/45597 , H01L21/02118 , H01L21/02271 , H01L21/67017 , H01L21/67109
摘要： A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.

7. 发明申请

US20140238972A1 THERMAL PROCESSING APPARATUS AND METHOD OF CONTROLLING THE SAME 审中-公开
标题翻译：热处理装置及其控制方法
公开(公告)号：US20140238972A1
公开(公告)日：2014-08-28
申请号：US14270524
申请日：2014-05-06
申请人： Tokyo Electron Limited
发明人： Koji YOSHII , Tatsuya YAMAGUCHI , Wenling WANG , Takanori SAITO
IPC分类号： H01L21/67
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014 , H01L21/67109 , H01L21/67248
摘要： A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.
摘要翻译：控制单元可以选择其中独立控制的控制区域的数量大的大量控制区域模型，以及独立控制的控制区域的数量为少数的控制区域模型小。当温度升高或降低时，控制单元可以根据来自相应控制区C1的温度传感器的信号，选择小数控制区模型，以便控制。。。数量少的加热器位于相应控制区C1上。。。 C5。当温度稳定时，控制单元可以根据来自各个控制区C1的温度传感器的信号信号来选择大数量的控制区域模型。。。 C10，其数量大，位于各个控制区C1上的加热器。。。 C10。

8. 发明申请

US20230010649A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM 有权
公开(公告)号：US20230010649A1
公开(公告)日：2023-01-12
申请号：US17810002
申请日：2022-06-30
申请人： Tokyo Electron Limited
发明人： Tatsuya YAMAGUCHI
IPC分类号： H01L21/02 , C08G18/02 , C08G18/18
摘要： A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.

9. 发明申请

US20210125837A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM 有权
公开(公告)号：US20210125837A1
公开(公告)日：2021-04-29
申请号：US17078275
申请日：2020-10-23
申请人： Tokyo Electron Limited
发明人： Ryuichi ASAKO , Tatsuya YAMAGUCHI
IPC分类号： H01L21/311 , C23C16/02 , C23C16/52 , C23C16/04 , B05D1/00
摘要： A method is provided. In the method, a substrate having a first region and a second region on a substrate surface is provided. A film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region is supplied to the substrate surface. The second bond has a second bond energy lower than a first bond energy of the first chemical bond. A film is selectively formed in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond.

10. 发明申请

US20200312672A1 COMPOSITION FOR FILM DEPOSITION AND FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：US20200312672A1
公开(公告)日：2020-10-01
申请号：US16645929
申请日：2019-05-24
申请人： Tokyo Electron Limited
发明人： Tatsuya YAMAGUCHI , Ryuichi ASAKO
IPC分类号： H01L21/311 , H01L21/02 , C09D175/12 , C09D175/02 , C23C16/02 , C23C16/56
摘要： A composition for film deposition that includes a first component and a second component, wherein the second component polymerizes with the first component to form a nitrogen-containing carbonyl compound, and wherein desorption energy of at least one of the first component and the second component is two or more times greater than formation energy of the nitrogen-containing carbonyl compound, is provided.

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