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1. 发明申请

US20210134604A1 ETCHING METHOD 有权
公开(公告)号：US20210134604A1
公开(公告)日：2021-05-06
申请号：US17149886
申请日：2021-01-15
申请人： TOKYO ELECTRON LIMITED
发明人： Takayuki KATSUNUMA
IPC分类号： H01L21/311 , H01L21/027 , H01L21/308 , H01L21/033 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. A plurality of sequences, each including the generating the plasma of the first processing gas and the generating the plasma of the second processing gas, are performed.

2. 发明申请

US20160307775A1 METHOD FOR ETCHING ORGANIC FILM 有权
标题翻译：蚀刻有机膜的方法
公开(公告)号：US20160307775A1
公开(公告)日：2016-10-20
申请号：US15098434
申请日：2016-04-14
申请人： TOKYO ELECTRON LIMITED
发明人： Chungjong LEE , Takayuki KATSUNUMA , Masanobu HONDA
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/31144
摘要： Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing container of a plasma processing apparatus that accommodates a workpiece. A partial region of the organic film that is exposed from a hard mask is changed into a denatured region by the generation of the plasma of the processing gas. Subsequently, plasma of a rare gas is generated within the processing container. The denatured region is removed by the plasma of the rare gas, and a substance released from the denatured region is deposited on the surface of the hard mask. In this method, the generation of the plasma of the processing gas and the generation of the plasma of the rare gas are repeated alternately.
摘要翻译：公开了一种蚀刻有机膜的方法。在容纳工件的等离子体处理装置的处理容器内产生含有氢气和氮气的处理气体的等离子体。通过产生处理气体的等离子体，将从硬掩模露出的有机膜的局部区域变成变性区域。随后，在处理容器内产生稀有气体的等离子体。通过稀有气体的等离子体去除变性区域，并且从变性区域释放的物质沉积在硬掩模的表面上。在该方法中，交替地重复处理气体的等离子体的产生和稀有气体的等离子体的产生。

3. 发明公开

US20230420263A1 ETCHING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20230420263A1
公开(公告)日：2023-12-28
申请号：US18212747
申请日：2023-06-22
申请人： Tokyo Electron Limited
发明人： Takayuki KATSUNUMA
IPC分类号： H01L21/311 , H01L21/308 , H01L21/3065 , H01L21/306 , H01J37/32
CPC分类号： H01L21/31116 , H01L21/308 , H01L21/3065 , H01L21/31144 , H01L21/30604 , H01L21/31111 , H01J37/32449 , H01J2237/334
摘要： An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.

4. 发明申请

US20220068629A1 SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20220068629A1
公开(公告)日：2022-03-03
申请号：US17458996
申请日：2021-08-27
申请人： TOKYO ELECTRON LIMITED
发明人： Takayuki KATSUNUMA
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/311 , H01J37/32
摘要： A substrate processing method includes step (a) of adsorbing a precursor on a side wall surface of a substrate where the side wall surface defines a recess in the substrate. The substrate processing method further includes step (b) of supplying a first chemical species and a second chemical species to the substrate. The first chemical species forms a film from the precursor on the side wall surface, and the second chemical species suppresses an increase of the thickness of the film. Steps (a) and (b) are alternately repeated.

5. 发明申请

US20210233778A1 ETCHING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM 有权
公开(公告)号：US20210233778A1
公开(公告)日：2021-07-29
申请号：US17160780
申请日：2021-01-28
申请人： TOKYO ELECTRON LIMITED
发明人： Maju TOMURA , Tomohiko NIIZEKI , Takayuki KATSUNUMA , Hironari SASAGAWA , Yuta NAKANE , Shinya ISHIKAWA , Kenta ONO , Sho KUMAKURA , Yusuke TAKINO , Masanobu HONDA
IPC分类号： H01L21/311 , H01L21/3205 , H01L21/3213
摘要： An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

6. 发明申请

US20200176265A1 SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20200176265A1
公开(公告)日：2020-06-04
申请号：US16564851
申请日：2019-09-09
申请人： TOKYO ELECTRON LIMITED
发明人： Takayuki KATSUNUMA , Toru HISAMATSU , Shinya ISHIKAWA , Yoshihide KIHARA , Masanobu HONDA , Maju TOMURA , Sho KUMAKURA
IPC分类号： H01L21/311 , H01L21/02
摘要： A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.

7. 发明申请

US20190318936A1 ETCHING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190318936A1
公开(公告)日：2019-10-17
申请号：US16212838
申请日：2018-12-07
申请人： TOKYO ELECTRON LIMITED
发明人： Takayuki KATSUNUMA
IPC分类号： H01L21/311 , H01L21/02 , H01L21/67
摘要： A method of etching selectively etches a first region of a substrate with respect to a second region of the substrate formed of a different material from the first region. A deposition film is formed of a chemical species included in plasma generated from a first gas. A gaseous precursor is supplied to the substrate having the deposition film formed thereon to form an adsorption film on the substrate from the precursor. Ions from plasma generated from a second gas are supplied to the substrate having the deposition film and the adsorption film formed thereon so as to cause a reaction between the material of the first region and a chemical species included in the deposition film, so that the first region is etched. The adsorption film reduces the etching rate of the second region during the etching of the first region.

8. 发明申请

US20150187588A1 PLASMA ETCHING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：等离子体蚀刻方法和半导体器件制造方法
公开(公告)号：US20150187588A1
公开(公告)日：2015-07-02
申请号：US14615725
申请日：2015-02-06
申请人： Tokyo Electron Limited
发明人： Kazuhiro KUBOTA , Masanobu HONDA , Takayuki KATSUNUMA
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/308 , H01J37/32 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas.
摘要翻译：蚀刻基板的等离子体蚀刻方法包括调整包含在等离子体中的活性种的浓度分布的调整步骤。调整步骤根据供给蚀刻气体的基板上的供给区域是否对应于供给的蚀刻气体的扩散效果大于所供给的蚀刻气体的流动的影响的区域，调整蚀刻气体的供给量提供的蚀刻气体或所供给的蚀刻气体的流动效应大于所供给的蚀刻气体的扩散效果的区域。

9. 发明申请

US20220344158A1 METHOD AND DEVICE FOR CONTROLLING A THICKNESS OF A PROTECTIVE FILM ON A SUBSTRATE 有权
公开(公告)号：US20220344158A1
公开(公告)日：2022-10-27
申请号：US17860127
申请日：2022-07-08
申请人： Tokyo Electron Limited
发明人： Takayuki KATSUNUMA
IPC分类号： H01L21/033 , H01L21/311 , H01J37/32 , C23C16/455 , C23C16/04 , C23C16/56
摘要： A plasma processing apparatus includes a reaction chamber having a gas inlet and a gas outlet; a gas supply connected to the gas inlet; a substrate support disposed in the reaction chamber; a plasma generator that forms a plasma in the reaction chamber; and processing circuitry. The processing circuitry controls provision of a substrate on the substrate support, the substrate including an etching layer and a mask on the etching layer; controls provision of a Si-containing gas to the reaction chamber to deposit a Si-containing film on at least a sidewall of a recess in the etching layer; controls the gas supply to supply a gas mixture to the reaction chamber; and controls the plasma generator to generate a first plasma from the gas mixture, thereby modifying the Si-containing film to form a protective film on the sidewall of the recess.

10. 发明申请

US20220068645A1 METHOD AND DEVICE FOR CONTROLLING A THICKNESS OF A PROTECTIVE FILM ON A SUBSTRATE 有权
公开(公告)号：US20220068645A1
公开(公告)日：2022-03-03
申请号：US17005401
申请日：2020-08-28
申请人： Tokyo Electron Limited
发明人： Takayuki KATSUNUMA
IPC分类号： H01L21/033 , H01L21/311 , H01J37/32 , C23C16/455 , C23C16/04 , C23C16/56
摘要： A method of forming a film on a substrate that includes an etching layer and a mask formed on the etching layer. The method comprises (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer; (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma; and (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.

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