专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

US20230167542A1 FILM FORMING APPARATUS 审中-公开
公开(公告)号：US20230167542A1
公开(公告)日：2023-06-01
申请号：US17905989
申请日：2021-02-26
申请人： TOKYO ELECTRON LIMITED
发明人： Junichi TAKEI , Shinji ORIMOTO , Shinji FURUKAWA
IPC分类号： C23C14/50 , C23C14/35
CPC分类号： C23C14/50 , C23C14/35 , H01J37/3435
摘要： A film forming apparatus for forming a film on a moving substrate by sputtering includes a processing container, a placement base having a placement surface on which a substrate is placed, a holder configured to hold a target, an upper shield member configured to divide a space in the processing container into an upper space and a lower space, a movement mechanism configured to move the placement base in a movement direction parallel to the placement surface and to move the placement base in the vertical direction, a leg member configured to connect the placement base and the movement mechanism, and a lower shield member configured to define the movement space together with the upper shield member. The lower shield member includes a fixed shield member and a moving shield member.

2. 发明申请

US20200266063A1 HARD MASK AND HARD MASK FORMING METHOD 审中-公开
公开(公告)号：US20200266063A1
公开(公告)日：2020-08-20
申请号：US16347182
申请日：2017-11-01
申请人： Tokyo Electron Limited
发明人： Hiroyuki TOSHIMA , Shinji FURUKAWA
IPC分类号： H01L21/033
摘要： In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and contains tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio specifying that the concentration of tungsten is 35 at % and the concentration of silicon is 65 at % and a ratio specifying that the concentration of tungsten is 50 at % and the concentration of silicon is 50 at %.

3. 发明申请

US20200227273A1 HARD MASK AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
公开(公告)号：US20200227273A1
公开(公告)日：2020-07-16
申请号：US16743466
申请日：2020-01-15
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroyuki TOSHIMA , Shinji FURUKAWA , Shota ISHIBASHI
IPC分类号： H01L21/311 , H01L21/3065 , H01L21/027 , H01L21/203 , H01L21/285 , C23C14/14 , C23C14/22
摘要： There is provided a hard mask formed on a substrate for manufacturing a semiconductor device, the hard mask including a film made of a compound which is composed of Ru and an element selected from Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Si.

4. 发明申请

US20200071815A1 FILM-FORMING DEVICE 审中-公开
公开(公告)号：US20200071815A1
公开(公告)日：2020-03-05
申请号：US16346705
申请日：2017-10-23
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroyuki TOSHIMA , Tatsuo HATANO , Tetsuya MIYASHITA , Shinji FURUKAWA , Junichi TAKEI
IPC分类号： C23C14/56 , C23C14/34 , C23C14/50 , C23C14/04
摘要： A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.

5. 发明申请

US20170317273A1 Method for Forming Perpendicular Magnetization Type Magnetic Tunnel Junction Element and Apparatus for Producing Perpendicular Magnetization Type Magnetic Tunnel Junction Element 审中-公开
公开(公告)号：US20170317273A1
公开(公告)日：2017-11-02
申请号：US15652816
申请日：2017-07-18
申请人： TOKYO ELECTRON LIMITED
发明人： Toru KITADA , Kanto NAKAMURA , Atsushi GOMI , Shinji FURUKAWA , Yusuke SUZUKI
IPC分类号： H01L43/12 , H01L43/08 , H01F41/18 , H01F10/32 , C23C14/08 , H01F10/16 , C23C14/58 , C23C14/34 , H01L43/10
CPC分类号： H01L43/12 , C23C14/082 , C23C14/165 , C23C14/34 , C23C14/568 , C23C14/5853 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/18 , H01L27/105 , H01L43/08 , H01L43/10
摘要： A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

6. 发明申请

US20160071707A1 PROCESSING APPARATUS 审中-公开
标题翻译：加工设备
公开(公告)号：US20160071707A1
公开(公告)日：2016-03-10
申请号：US14842821
申请日：2015-09-01
申请人： TOKYO ELECTRON LIMITED
发明人： Shinji FURUKAWA , Hiroyuki TOSHIMA , Tooru KITADA , Kanto NAKAMURA , Kazunaga ONO
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01J37/3488 , H01J37/32715 , H01J37/32724 , H01J37/32733
摘要： A processing apparatus includes a processing chamber, a rotatable mounting table, a cooling mechanism and a driving mechanism. A sputtering target is provided in the processing chamber. The rotatable mounting table is provided in the processing chamber and configured to mount thereon an object to be processed. The cooling mechanism is configured to cool the mounting table. The driving mechanism is configured to change a relative position of the mounting table with respect to the cooling mechanism. The driving mechanism changes a conductivity of heat from the mounting table to the cooling mechanism at least by switching a first state in which the mounting table and the cooling mechanism are separated from each other and a second state in which the mounting table and the cooling mechanism become close to each other.
摘要翻译：处理装置包括处理室，可旋转安装台，冷却机构和驱动机构。在处理室中设置溅射靶。可旋转安装台设置在处理室中并且构造成在其上安装待处理物体。冷却机构被配置为冷却安装台。驱动机构被配置为改变安装台相对于冷却机构的相对位置。至少通过将安装台和冷却机构分离的第一状态切换到安装台和冷却机构的第二状态，驱动机构将热量从安装台改变为冷却机构互相靠近。

7. 发明申请

US20170372951A1 METHOD AND PROCESSING APPARATUS FOR PERFORMING PRE-TREATMENT TO FORM COPPER WIRING IN RECESS FORMED IN SUBSTRATE 审中-公开
公开(公告)号：US20170372951A1
公开(公告)日：2017-12-28
申请号：US15627478
申请日：2017-06-20
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroyuki TOSHIMA , Tatsuo HATANO , Shinji FURUKAWA , Naoki WATANABE , Naoyuki SUZUKI
IPC分类号： H01L21/768 , H01J37/34 , H01L21/687 , H01J37/32
CPC分类号： H01L21/76862 , H01J37/32715 , H01J37/32733 , H01J37/32899 , H01J37/3435 , H01L21/68764 , H01L21/76802 , H01L21/76843 , H01L21/76871 , H01L21/76879
摘要： There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.

8. 发明申请

US20180001597A1 METHOD FOR FORMING COPPER FILM 审中-公开
公开(公告)号：US20180001597A1
公开(公告)日：2018-01-04
申请号：US15638099
申请日：2017-06-29
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroyuki TOSHIMA , Atsushi SHIMADA , Tatsuo HIRASAWA , Tatsuo HATANO , Shinji FURUKAWA
IPC分类号： B32B15/20 , H01L23/532 , C01G23/00 , C01G41/00
CPC分类号： B32B15/20 , C01G23/00 , C01G41/00 , H01L21/768 , H01L23/53238
摘要： A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.

9. 发明申请

US20160032446A1 FILM FORMING APPARATUS AND FILM FORMING METHOD 有权
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：US20160032446A1
公开(公告)日：2016-02-04
申请号：US14810239
申请日：2015-07-27
申请人： Tokyo Electron Limited
发明人： Atsushi GOMI , Kanto NAKAMURA , Tooru KITADA , Yasunobu SUZUKI , Shinji FURUKAWA
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/0063 , C23C14/081 , C23C14/3464 , C23C14/3492 , C23C14/541 , H01J37/3244 , H01J37/32724 , H01J37/3405
摘要： A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.
摘要翻译：用于在物体上形成金属氧化物膜的成膜装置包括保持单元和加热单元。保持单元包括第一加热器并将物体保持在处理室中。第一加热器电源向第一加热器供电。目标电极与设置在保持单元上方的金属靶电连接。溅射电源电连接到目标电极。导入机构向保持单元供给氧气。加热单元包括用于加热物体的第二加热器和用于在设置在保持单元上方的第一空间中的区域和与第一空间分离的第二空间中的区域之间移动第二加热器的移动机构。第二加热器电源向第二加热器供电。

10. 发明申请

US20180012756A1 Method of Forming Insulating Film 审中-公开
公开(公告)号：US20180012756A1
公开(公告)日：2018-01-11
申请号：US15639682
申请日：2017-06-30
申请人： TOKYO ELECTRON LIMITED
发明人： Naoki WATANABE , Tatsuo HATANO , Shinji FURUKAWA , Naoyuki SUZUKI
IPC分类号： H01L21/02 , H01L21/28
CPC分类号： H01L21/02225 , C23C14/3464 , C23C14/505 , H01L21/28061 , H01L21/28202 , H01L43/12
摘要： There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式