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1. 发明申请

US20220098717A1 FILM FORMING APPARATUS AND FILM FORMING METHOD 有权
公开(公告)号：US20220098717A1
公开(公告)日：2022-03-31
申请号：US17428597
申请日：2019-09-20
申请人： TOKYO ELECTRON LIMITED
发明人： Kenichi IMAKITA , Kazunaga ONO , Toru KITADA , Keisuke SATO , Atsushi GOMI , Hiroyuki YOKOHARA , Hiroshi SONE
IPC分类号： C23C14/00 , C23C14/50 , C23C14/08 , C23C14/56 , C23C14/34
摘要： A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

2. 发明申请

US20210082675A1 SPUTTERING METHOD AND SPUTTERING APPARATUS 有权
公开(公告)号：US20210082675A1
公开(公告)日：2021-03-18
申请号：US17015170
申请日：2020-09-09
申请人： Tokyo Electron Limited
发明人： Kazunaga ONO , Atsushi GOMI , Tatsuo HATANO , Yasuhiro OTAGIRI , Tomoyuki FUJIHARA , Yuuki MOTOMURA
IPC分类号： H01J37/34 , C23C14/34 , H01L21/203
摘要： A sputtering method including: performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided closed to the target to be capable of opening/closing the target; and, after the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate. When the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target.

3. 发明申请

US20160071707A1 PROCESSING APPARATUS 审中-公开
标题翻译：加工设备
公开(公告)号：US20160071707A1
公开(公告)日：2016-03-10
申请号：US14842821
申请日：2015-09-01
申请人： TOKYO ELECTRON LIMITED
发明人： Shinji FURUKAWA , Hiroyuki TOSHIMA , Tooru KITADA , Kanto NAKAMURA , Kazunaga ONO
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01J37/3488 , H01J37/32715 , H01J37/32724 , H01J37/32733
摘要： A processing apparatus includes a processing chamber, a rotatable mounting table, a cooling mechanism and a driving mechanism. A sputtering target is provided in the processing chamber. The rotatable mounting table is provided in the processing chamber and configured to mount thereon an object to be processed. The cooling mechanism is configured to cool the mounting table. The driving mechanism is configured to change a relative position of the mounting table with respect to the cooling mechanism. The driving mechanism changes a conductivity of heat from the mounting table to the cooling mechanism at least by switching a first state in which the mounting table and the cooling mechanism are separated from each other and a second state in which the mounting table and the cooling mechanism become close to each other.
摘要翻译：处理装置包括处理室，可旋转安装台，冷却机构和驱动机构。在处理室中设置溅射靶。可旋转安装台设置在处理室中并且构造成在其上安装待处理物体。冷却机构被配置为冷却安装台。驱动机构被配置为改变安装台相对于冷却机构的相对位置。至少通过将安装台和冷却机构分离的第一状态切换到安装台和冷却机构的第二状态，驱动机构将热量从安装台改变为冷却机构互相靠近。

4. 发明申请

US20230011226A1 FILM THICKNESS MEASUREMENT METHOD, FILM THICKNESS MEASUREMENT DEVICE, AND FILM FORMATION SYSTEM 有权
公开(公告)号：US20230011226A1
公开(公告)日：2023-01-12
申请号：US17853455
申请日：2022-06-29
申请人： Tokyo Electron Limited
发明人： Kazunaga ONO , Kanto NAKAMURA , Toru KITADA , Atsushi GOMI
IPC分类号： G01B11/06 , G01N21/95
摘要： There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.

5. 发明申请

US20210285096A1 FILM THICKNESS MEASURING APPARATUS AND FILM THICKNESS MEASURING METHOD, AND FILM FORMING SYSTEM AND FILM FORMING METHOD 有权
公开(公告)号：US20210285096A1
公开(公告)日：2021-09-16
申请号：US17184089
申请日：2021-02-24
申请人： Tokyo Electron Limited
发明人： Masato SHINADA , Tamaki TAKEYAMA , Kazunaga ONO , Naoyuki SUZUKI , Hiroaki CHIHAYA , Einstein Noel ABARRA
IPC分类号： C23C14/54 , H01L43/12 , H01L21/66 , H01F41/32 , G01B11/06 , G01S17/08 , G01S7/481
摘要： A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.

6. 发明申请

US20150114835A1 FILM FORMING APPARATUS 审中-公开
标题翻译：电影制作装置
公开(公告)号：US20150114835A1
公开(公告)日：2015-04-30
申请号：US14525096
申请日：2014-10-27
申请人： Tokyo Electron Limited
发明人： Atsushi GOMI , Shinji FURUKAWA , Kanto NAKAMURA , Kazunaga ONO
IPC分类号： H01J37/34
CPC分类号： H01J37/3423 , H01J37/3417 , H01J37/3447
摘要： A film forming apparatus includes a stage provided in the processing chamber; three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage, each of the targets having a substantially rectangular shape; a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; and a rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line. A width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage.
摘要翻译：一种成膜装置，包括：设置在处理室中的台; 沿着穿过台的中心的垂直轴线周围的圆均匀排列的三个或更多个目标，每个目标具有基本上矩形的形状; 设置在所述目标和所述台之间的快门，所述快门包括允许所述目标之一选择性地暴露于所述台的开口; 以及联接到所述活门的旋转轴，所述旋转轴沿着所述垂直轴线延伸。以围绕垂直轴线为中心的圆的切线方向的开口的宽度设定为使得目标之间的圆周方向上的两个相邻目标被部分地同时暴露于台。

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