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1. 发明授权

US09970110B2 Plasma processing apparatus 有权
公开(公告)号：US09970110B2
公开(公告)日：2018-05-15
申请号：US14518151
申请日：2014-10-20
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Jun Ogawa , Akira Shimizu
IPC分类号： C23C16/455 , H05H1/46 , C23C16/509 , C23C16/452 , H01J37/32
CPC分类号： C23C16/45582 , C23C16/452 , C23C16/45523 , C23C16/45578 , H01J37/32091 , H01J37/3244 , H01J37/32568
摘要： A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

2. 发明授权

US09123782B2 Amorphous silicon film formation method and amorphous silicon film formation apparatus 有权
标题翻译：非晶硅膜形成方法和非晶硅膜形成装置
公开(公告)号：US09123782B2
公开(公告)日：2015-09-01
申请号：US14656914
申请日：2015-03-13
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Hiroki Murakami , Akinobu Kakimoto
IPC分类号： H01L21/00 , H01L21/768 , C23C16/52 , C23C16/24
CPC分类号： H01L21/76843 , C23C16/0272 , C23C16/24 , C23C16/52 , H01L21/76876
摘要： An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group, wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber.
摘要翻译：非晶硅膜形成方法包括在处理室中转移碱，加热处理室中的碱，设定处理室内的处理压力，通过在氨基硅烷基气体中流动而在基材的表面上形成种子层处理室，其中基于氨基硅烷的气体不被热分解并且将氨基硅烷基气体吸附到基底的表面上，处理条件具有第一温度，并且在籽晶层上形成非晶硅膜，在高于第一温度的第二温度下加热碱，在处理室中流动不含氨基的硅烷基气体，并且热分解不含氨基的硅烷基气体，其中种子层的形成和成型的非晶硅膜在处理室中连续进行。

3. 发明授权

US08815714B2 Method of forming a germanium thin film 有权
标题翻译：形成锗薄膜的方法
公开(公告)号：US08815714B2
公开(公告)日：2014-08-26
申请号：US13780842
申请日：2013-02-28
申请人： Tokyo Electron Limited
发明人： Akinobu Kakimoto , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： H01L21/02
CPC分类号： H01L21/67017 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.
摘要翻译：在下面的膜上形成锗薄膜的方法包括通过使用氨基锗烷类气体在基底膜的表面上吸收锗来形成锗种子层，并且在锗种子层上使用锗烷形成锗薄膜的气体。

4. 发明授权

US10191378B2 Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
公开(公告)号：US10191378B2
公开(公告)日：2019-01-29
申请号：US15440406
申请日：2017-02-23
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： G03F7/40 , C23C16/02 , C23C16/40 , C23C16/455 , H01L21/02 , H01L21/033 , H01L21/311 , H01L21/316 , H01L21/3213 , H01L21/768 , H01L21/027
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

5. 发明授权

US10141187B2 Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
公开(公告)号：US10141187B2
公开(公告)日：2018-11-27
申请号：US15714052
申请日：2017-09-25
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： H01L21/027 , C23C16/02 , C23C16/40 , C23C16/455 , G03F7/40 , H01L21/02 , H01L21/033 , H01L21/311 , H01L21/316 , H01L21/3213 , H01L21/768
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

6. 发明授权

US09353442B2 Apparatus for forming silicon-containing thin film 有权
标题翻译：用于形成含硅薄膜的装置
公开(公告)号：US09353442B2
公开(公告)日：2016-05-31
申请号：US14576410
申请日：2014-12-19
申请人： TOKYO ELECTRON LIMITED
发明人： Mitsuhiro Okada , Akinobu Kakimoto , Kazuhide Hasebe
IPC分类号： C23C16/00 , C23C16/52 , C23C16/02 , C23C16/24 , C30B25/18 , C30B29/06 , H01L21/02
CPC分类号： C23C16/52 , C23C16/0272 , C23C16/24 , C30B25/183 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/02573 , H01L21/0262
摘要： Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.
摘要翻译：提供了一种用于形成含硅薄膜的装置，该装置包括控制器，该控制器被配置为控制处理气体供给机构，加热装置和排气器，以执行：通过吸附在基底上形成第一种子层使用基于氨基硅烷的气体在基体上的氨基硅烷系气体中含有最少的硅; 通过使用具有等于或高于乙硅烷的数量级的高级硅烷系气体中至少含有硅，通过使用具有以下顺序的高级硅烷系气体，形成第一籽晶层上的第二晶种层：等于或高于所述乙硅烷，其中所述第一种子层和所述第二种子层形成双种子层; 并在双种子层上形成含硅薄膜。

7. 发明授权

US11881379B2 Film deposition apparatus for fine pattern forming 有权
公开(公告)号：US11881379B2
公开(公告)日：2024-01-23
申请号：US17808375
申请日：2022-06-23
申请人： Tokyo Electron Limited
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： H01J37/32 , C23C16/02 , C23C16/40 , C23C16/455 , H01L21/02 , H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/768 , H01L21/316 , G03F7/40 , H01L21/027
CPC分类号： H01J37/32091 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01J37/3244 , H01J37/32834 , H01L21/027 , H01L21/0228 , H01L21/0274 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/31608 , H01L21/31616 , H01L21/32139 , H01L21/76816
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

8. 发明授权

US10176992B2 Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
公开(公告)号：US10176992B2
公开(公告)日：2019-01-08
申请号：US13848849
申请日：2013-03-22
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
IPC分类号： C23C16/455 , H01L21/3213 , H01L21/027 , H01L21/02 , H01L21/768 , H01L21/316 , H01L21/311 , C23C16/02 , G03F7/40 , C23C16/40 , H01L21/033
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

9. 发明授权

US09920422B2 Method and apparatus of forming silicon nitride film 有权
公开(公告)号：US09920422B2
公开(公告)日：2018-03-20
申请号：US14984139
申请日：2015-12-30
申请人： TOKYO ELECTRON LIMITED
发明人： Akinobu Kakimoto , Kazuhide Hasebe
IPC分类号： C23C16/34 , C23C16/46 , C23C16/455 , C23C16/505 , C23C16/458 , H01L21/02
CPC分类号： C23C16/345 , C23C16/45534 , C23C16/45542 , C23C16/45544 , C23C16/45551 , C23C16/4584 , C23C16/46 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

10. 发明授权

US09758865B2 Silicon film forming method, thin film forming method and cross-sectional shape control method 有权
公开(公告)号：US09758865B2
公开(公告)日：2017-09-12
申请号：US14447060
申请日：2014-07-30
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide Hasebe , Kazuya Takahashi , Katsuhiko Komori , Yoshikazu Furusawa , Mitsuhiro Okada , Hiroyuki Hayashi , Akinobu Kakimoto
IPC分类号： C23C16/00 , C23C16/04 , C23C16/24 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： C23C16/045 , C23C16/24 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

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