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1. 发明授权

US4860086A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4860086A
公开(公告)日：1989-08-22
申请号：US26254
申请日：1987-03-16
申请人： Tohru Nakamura , Masahiko Ogirima , Kazuo Nakazato , Takao Miyazaki , Naoki Yamamoto , Minoru Nagata , Shojiro Sugaki, deceased
发明人： Tohru Nakamura , Masahiko Ogirima , Kazuo Nakazato , Takao Miyazaki , Naoki Yamamoto , Minoru Nagata , Shojiro Sugaki, deceased
IPC分类号： H01L23/485 , H01L23/532
CPC分类号： H01L23/53271 , H01L23/485 , H01L2924/0002
摘要： A semiconductor device is constructed so that an insulation film is provided in regions other than a protruding portion of a substrate. A polycrystalline silicon layer and a metal silicide layer are formed over said insulation film to provide a multi-layer structure, and a take-out portion for at least one of the emitter, base, and collector members of a bipolar transistor provided in the mesa region is constituted by a film of this multi-layer structure. By virtue of the use of metal silicide together with the polycrystalline silicon, a very low resistance is achieved which enhances the device's operating speed. Further, the metal silicide is separated from the protruding portion of the substrate by a portion of the polycrystalline silicon to provide a smooth interface with the substrate. This smooth interface significantly reduces crystal defects in the single crystal substrate.
摘要翻译：构造半导体器件，使得绝缘膜设置在除了衬底的突出部分之外的区域中。在所述绝缘膜上形成多晶硅层和金属硅化物层以提供多层结构，以及设置在台面中的双极晶体管的发射极，基极和集电极构件中的至少一个的取出部分区域由该多层结构的膜构成。由于金属硅化物与多晶硅一起使用，所以实现了非常低的电阻，这增强了器件的工作速度。此外，金属硅化物通过多晶硅的一部分与衬底的突出部分分离，以提供与衬底的平滑界面。这种平滑的界面显着地减少了单晶衬底中的晶体缺陷。

2. 发明授权

US4819055A Semiconductor device having a PN junction formed on an insulator film 失效
标题翻译：具有形成在绝缘膜上的PN结的半导体器件
公开(公告)号：US4819055A
公开(公告)日：1989-04-04
申请号：US189382
申请日：1988-05-02
申请人： Kazuo Nakazato , Tohru Nakamura , Takao Miyazaki , Nobuyoshi Natsuaki , Masahiko Ogirima , Minoru Nagata
发明人： Kazuo Nakazato , Tohru Nakamura , Takao Miyazaki , Nobuyoshi Natsuaki , Masahiko Ogirima , Minoru Nagata
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L29/72 , H01L29/732 , H01L27/12 , H01L29/04 , H01L29/06
CPC分类号： H01L29/66272 , H01L21/8222 , H01L29/72 , H01L29/7325
摘要： The invention deals with a semiconductor device which comprises a semiconductor substrate of a first conductivity type, a semiconductor region formed on said substrate, and a first insulation film provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer formed in the periphery of said semiconductor region thereby to reduce the parasitic capacitance, and wherein said insulation film is stretched and arranged on the lower side of said semiconductor region.
摘要翻译：本发明涉及一种半导体器件，其包括第一导电类型的半导体衬底，形成在所述衬底上的半导体区域和设置在所述半导体区域和所述半导体衬底之间的第一绝缘膜，其中所述半导体衬底被所述绝缘体隔离从形成在所述半导体区域的周围的多晶硅层形成的膜，从而减小寄生电容，并且其中所述绝缘膜被拉伸并布置在所述半导体区域的下侧。

3. 发明授权

US4825281A Bipolar transistor with sidewall bare contact structure 失效
标题翻译：双极晶体管与侧壁裸接触结构
公开(公告)号：US4825281A
公开(公告)日：1989-04-25
申请号：US435552
申请日：1982-10-21
申请人： Kazuo Nakazato , Tohru Nakamura , Masatoshi Matsuda , Takao Miyazaki , Tokuo Kure , Takahiro Okabe , Minoru Nagata
发明人： Kazuo Nakazato , Tohru Nakamura , Masatoshi Matsuda , Takao Miyazaki , Tokuo Kure , Takahiro Okabe , Minoru Nagata
IPC分类号： H01L21/8222 , H01L21/033 , H01L21/3205 , H01L21/331 , H01L27/06 , H01L29/423 , H01L29/70 , H01L29/72 , H01L29/73 , H01L29/732 , H01L29/735 , H01L23/48 , H01L29/04 , H01L29/34
CPC分类号： H01L29/66272 , H01L21/033 , H01L29/42304 , H01L29/72 , H01L29/732 , H01L29/735
摘要： A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.
摘要翻译：一种半导体器件，其中晶体管的有源区形成在设置在绝缘膜中的开口中，电极由形成在绝缘膜上的多晶硅膜引出，发射极和基极的上表面和暴露表面的绝缘膜基本上均匀。

4. 发明授权

US5061645A Method of manufacturing a bipolar transistor 失效
公开(公告)号：US5061645A
公开(公告)日：1991-10-29
申请号：US498489
申请日：1990-03-26
申请人： Kazuo Nakazato , Tohru Nakamura , Masatoshi Matsuda , Takao Miyazaki , Tokuo Kure , Takahiro Okabe , Minoru Nagata
发明人： Kazuo Nakazato , Tohru Nakamura , Masatoshi Matsuda , Takao Miyazaki , Tokuo Kure , Takahiro Okabe , Minoru Nagata
IPC分类号： H01L21/8222 , H01L21/033 , H01L21/3205 , H01L21/331 , H01L27/06 , H01L29/423 , H01L29/70 , H01L29/72 , H01L29/73 , H01L29/732 , H01L29/735
CPC分类号： H01L29/66272 , H01L21/033 , H01L29/42304 , H01L29/72 , H01L29/732 , H01L29/735
摘要： A method of manufacturing a bipolar transistor semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.

5. 发明授权

US4933737A Polysilon contacts to IC mesas 失效
标题翻译：多晶硅接触到IC台面
公开(公告)号：US4933737A
公开(公告)日：1990-06-12
申请号：US56127
申请日：1987-06-01
申请人： Tohru Nakamura , Takao Miyazaki , Susumu Takahashi , Ichiro Imaizumi , Takahiro Okabe , Minoru Nagata , Masao Kawamura
发明人： Tohru Nakamura , Takao Miyazaki , Susumu Takahashi , Ichiro Imaizumi , Takahiro Okabe , Minoru Nagata , Masao Kawamura
IPC分类号： H01L21/20 , H01L21/285 , H01L21/331 , H01L21/8226 , H01L23/532 , H01L27/02 , H01L27/06 , H01L27/082 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/45 , H01L29/73
CPC分类号： H01L29/0847 , H01L21/02381 , H01L21/02532 , H01L21/02546 , H01L21/28525 , H01L23/53271 , H01L27/0233 , H01L27/06 , H01L29/1004 , H01L29/42304 , H01L29/456 , H01L29/7317 , H01L2924/0002 , Y10S438/965
摘要： A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinsic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.
摘要翻译：双极晶体管包括具有凸部的n型Si半导体本体，覆盖半导体主体的除凸部以外的表面的绝缘膜以及形成在绝缘膜上的p型多晶Si层。形成在凸部中的p型区域作为本征基极区域，多晶Si层用作非本征基极区域，在本征基极区域中形成的n型区域用作发射极区域，并且主体用作一个收集区域。

6. 发明授权

US5019523A Process for making polysilicon contacts to IC mesas 失效
标题翻译：使多晶硅接触到IC台面的工艺
公开(公告)号：US5019523A
公开(公告)日：1991-05-28
申请号：US501964
申请日：1990-03-30
申请人： Tohru Nakamura , Takao Miyazaki , Susumu Takahashi , Ichiro Imaizumi , Takahiro Okabe , Minoru Nagata , Masao Kawamura
发明人： Tohru Nakamura , Takao Miyazaki , Susumu Takahashi , Ichiro Imaizumi , Takahiro Okabe , Minoru Nagata , Masao Kawamura
IPC分类号： H01L21/20 , H01L21/285 , H01L21/331 , H01L21/8226 , H01L23/532 , H01L27/02 , H01L27/06 , H01L27/082 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/45 , H01L29/73
CPC分类号： H01L29/0847 , H01L21/02381 , H01L21/02532 , H01L21/02546 , H01L21/28525 , H01L23/53271 , H01L27/0233 , H01L27/06 , H01L29/1004 , H01L29/42304 , H01L29/456 , H01L29/7317 , H01L2924/0002 , Y10S438/965
摘要： Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

7. 发明授权

US07324958B2 Information administering system for an eating house 失效
标题翻译：食堂信息管理系统
公开(公告)号：US07324958B2
公开(公告)日：2008-01-29
申请号：US10209920
申请日：2002-08-02
申请人： Takao Miyazaki , Keizo Uchioke , Satoru Goto , Kazuo Okoyama
发明人： Takao Miyazaki , Keizo Uchioke , Satoru Goto , Kazuo Okoyama
IPC分类号： G06Q30/00 , G06Q50/00
CPC分类号： G06Q30/06 , G06Q20/20 , G06Q50/12
摘要： A customer of an eating house orders refreshments by pressing a first touch panel provided at a customer's seat, watching a liquid-crystal monitor on which a menu of the refreshment and an average cooking time thereof are displayed. A cook inputs cooking-state information with a second touch panel provided in a kitchen when cooking is started and is completed. The cooking-state information is displayed on the liquid-crystal monitor so that it is possible to confirm a cooking state of the ordered refreshment. When the ordered refreshment is untouched, the customer can cancel or urge the refreshment by pressing the first touch panel. Upon instructing a check with the first touch panel, the check is printed out from a printer. The customer can order, cancel and urge the refreshments without calling a waitperson.
摘要翻译：餐厅的顾客通过按下在客户座位上提供的第一触摸面板来点餐，观看其上显示了茶点菜单和平均烹饪时间的液晶监视器。当烹饪开始并完成时，烹饪者在厨房中提供的第二触摸面板输入烹饪状态信息。烹调状态信息显示在液晶监视器上，使得可以确认订购茶点的烹饪状态。当订购的茶点不受影响时，客户可以通过按第一个触摸面板来取消或敦促刷新。在指示与第一触摸面板进行检查时，从打印机打印出该支票。客户可以在不打电话给等待人的情况下订购，取消并敦促茶点。

8. 发明申请

US20050158102A1 Goods-wrapping apparatus including a printer 失效
公开(公告)号：US20050158102A1
公开(公告)日：2005-07-21
申请号：US11076657
申请日：2005-03-09
申请人： Takao Miyazaki
发明人： Takao Miyazaki
IPC分类号： G06K7/00 , B41J3/407 , B65B61/02 , B65B61/26 , B65C9/46 , B65D30/22
CPC分类号： B65B61/26
摘要： According to the present invention, a goods-wrapping apparatus for wrapping a particular article of a plurality of articles, includes: a goods storing section operable to store the plurality of articles; a goods carrying in/out section operable to carry in the articles into the goods storing section and carry out the article from the goods storing section; a printer operable to print a printing content associated with the particular article onto a printing medium based on the particular article; and a wrapping section operable to wrap the particular article carried out from the goods carrying in/out section with the printing medium onto which the printing content associated with the particular article has been printed.

9. 发明授权

US06305856B1 Printing method and apparatus therefor 失效
标题翻译：印刷方法及其设备
公开(公告)号：US06305856B1
公开(公告)日：2001-10-23
申请号：US09571548
申请日：2000-05-16
申请人： Takao Miyazaki
发明人： Takao Miyazaki
IPC分类号： B41J2146
CPC分类号： B41J11/008 , B41J11/42
摘要： There is disclosed a method and an apparatus of printing an image in a rectangular recording area on a recording material by a printing head as the recording material is advanced in a sub scan direction perpendicular to a main scan direction of the printing head. The printing head has a wider main scanning range than a width of the recording area. On side edge of the advancing recording medium is detected at two points to determine positions in the main scan direction of the two side edge points. Based on the positions of the side edge points, an inclination of the recording medium to the sub scan direction as well as positions of four corner points of the recording area in the main and sub scan direction relative to a center point of the main scanning range are determined. Based on the relative positions of the four corner points, a sub scanning range of the printing head that corresponds to a length of the recording material to be advanced for recording one image is determined, such that a scanning area defined by the main and sub scanning ranges covers the recording area. Then, print data is produced from image data of an image to print and blank data, such that the print data corresponds in size to the scanning area and includes the image data in a location corresponding to a location of the recording area within the scanning area. The blank data is allocated to other locations of the print data so no pixel is recorded outside the recording area.
摘要翻译：公开了一种方法和装置，当记录材料在垂直于打印头的主扫描方向的副扫描方向上前进时，由打印头在记录材料上的矩形记录区域中打印图像。打印头具有比记录区域的宽度更宽的主扫描范围。在两个点处检测前进记录介质的侧边缘，以确定两个侧边缘点的主扫描方向上的位置。基于侧边缘点的位置，记录介质相对于副扫描方向的倾斜度以及相对于主扫描范围的中心点在主扫描方向和副扫描方向上的记录区域的四个角点的位置确定。基于四个角点的相对位置，确定与用于记录一个图像的要提前的记录材料的长度相对应的打印头的副扫描范围，使得由主扫描和副扫描定义的扫描区域范围涵盖记录区域。然后，从要打印的图像的图像数据和空白数据产生打印数据，使得打印数据的大小对应于扫描区域，并且将图像数据包括在与扫描区域内的记录区域的位置相对应的位置。空白数据被分配给打印数据的其他位置，因此在记录区域之外不记录像素。

10. 发明授权

US4892751A Method of and apparatus for forming a thin film 失效
标题翻译：薄膜形成方法和装置
公开(公告)号：US4892751A
公开(公告)日：1990-01-09
申请号：US132358
申请日：1987-12-14
申请人： Kiyoshi Miyake , Akira Shintani , Keizo Suzuki , Takao Miyazaki
发明人： Kiyoshi Miyake , Akira Shintani , Keizo Suzuki , Takao Miyazaki
IPC分类号： H01L21/205 , C23C16/48 , H01L21/263
CPC分类号： C23C16/483
摘要： A method of forming a thin film wherein a gas which contains an element used to constitute a desired thin film as at least a part of its constituent elements or a condensed solid layer of this gas is irradiated with a high output power laser beam to dissociate the gas or the solid layer of the gas and thereby locally produce a plasma, and a substrate is irradiated with reactive particles produced in the plasma, thereby obtaining a highly-pure high-quality thin film. Also disclosed is an apparatus for realizing this method.
摘要翻译：一种形成薄膜的方法，其中包含用于构成作为其组成元素的至少一部分的所需薄膜的元素或该气体的冷凝固体层的气体被高输出功率激光束照射以解离气体或固体层，从而局部地产生等离子体，并且用等离子体中产生的反应性粒子照射基板，从而获得高纯度的高质量薄膜。还公开了一种用于实现该方法的装置。

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