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1. 发明申请

US20100323502A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100323502A1
公开(公告)日：2010-12-23
申请号：US12449347
申请日：2008-02-19
申请人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
发明人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer.
摘要翻译：本发明提供一种SOI衬底的制造方法，其至少包括：从单晶硅衬底的一个主表面离子注入氧离子以形成氧离子注入层的氧离子注入步骤; 以及对其中形成有氧离子注入层的单晶硅衬底进行热处理以将氧离子注入层改变为掩埋氧化膜层的热处理步骤，其中用于氧离子注入的加速能为预先根据要获得的掩埋氧化物膜层的厚度确定，并且用所确定的加速能量进行氧离子注入步骤以制造SOI衬底。由此，能够提供能够高效地制造具有连续均匀的薄埋氧化膜层的SOI衬底的SOI衬底制造方法。

2. 发明授权

US07799660B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07799660B2
公开(公告)日：2010-09-21
申请号：US12078526
申请日：2008-04-01
申请人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
发明人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/322
CPC分类号： H01L21/76243 , H01L21/26533 , H01L21/3226
摘要： The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatment that changes the formed oxygen-ion-implanted layer into a buried oxide film layer is performed with respect to the single-crystal silicon substrate to manufacture the SOI substrate, the method comprising: implanting a neutral element ion having a dose amount of 1×1012 atoms/cm2 or above and less than 1×1015 atoms/cm2 into a back surface to form an ion-implanted damage layer after performing the oxide film-forming heat treatment; and gettering a metal impurity in the ion-implanted damage layer by a subsequent heat treatment to enable reducing a metal impurity concentration on a front surface side. Thereby, there is provided a method for manufacturing an SOI substrate having a gettering layer on a back surface thereof in a simple process at a low cost.
摘要翻译：本发明提供了一种用于制造SOI衬底的方法，通过该SOI衬底从单晶硅衬底的至少一个主表面注入氧离子以形成氧离子注入层，然后进行氧化膜形成热处理相对于单晶硅基板进行将形成的氧离子注入层变成埋入氧化膜层的方法，制造SOI衬底，该方法包括：注入剂量为1×1012的中性元素离子原子/ cm 2以上且小于1×10 15原子/ cm 2进入背面，在进行氧化膜形成热处理后形成离子注入损伤层; 并通过随后的热处理在离子注入的损伤层中吸收金属杂质，以减少前表面侧的金属杂质浓度。因此，提供了一种以简单的方法以低成本制造其背面上具有吸气层的SOI衬底的方法。

3. 发明授权

US08338277B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08338277B2
公开(公告)日：2012-12-25
申请号：US12449347
申请日：2008-02-19
申请人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
发明人： Hiroshi Takeno , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/76243 , H01L21/26533
摘要： The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer.
摘要翻译：本发明提供一种SOI衬底的制造方法，其至少包括：从单晶硅衬底的一个主表面离子注入氧离子以形成氧离子注入层的氧离子注入步骤; 以及对其中形成有氧离子注入层的单晶硅衬底进行热处理以将氧离子注入层改变为掩埋氧化膜层的热处理步骤，其中用于氧离子注入的加速能为预先根据要获得的掩埋氧化物膜层的厚度确定，并且用所确定的加速能量进行氧离子注入步骤以制造SOI衬底。由此，能够提供能够高效地制造具有连续均匀的薄埋氧化膜层的SOI衬底的SOI衬底制造方法。

4. 发明申请

US20080261411A1 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080261411A1
公开(公告)日：2008-10-23
申请号：US12078526
申请日：2008-04-01
申请人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
发明人： Tohru Ishizuka , Hiroshi Takeno , Nobuhiko Noto
IPC分类号： H01L21/31
CPC分类号： H01L21/76243 , H01L21/26533 , H01L21/3226
摘要： The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatment that changes the formed oxygen-ion-implanted layer into a buried oxide film layer is performed with respect to the single-crystal silicon substrate to manufacture the SOI substrate, the method comprising: implanting a neutral element ion having a dose amount of 1×1012 atoms/cm2 or above and less than 1×1015 atoms/cm2 into a back surface to form an ion-implanted damage layer after performing the oxide film-forming heat treatment; and gettering a metal impurity in the ion-implanted damage layer by a subsequent heat treatment to enable reducing a metal impurity concentration on a front surface side. Thereby, there is provided a method for manufacturing an SOI substrate having a gettering layer on a back surface thereof in a simple process at a low cost.
摘要翻译：本发明提供了一种用于制造SOI衬底的方法，通过该SOI衬底从单晶硅衬底的至少一个主表面注入氧离子以形成氧离子注入层，然后进行氧化膜形成热处理对于单晶硅基板进行将所形成的氧离子注入层改变为掩埋氧化膜层以制造SOI衬底的方法，该方法包括：注入剂量为1×10 12个原子/ cm 2以上且小于1×10 15个原子/ cm 2进入背面以形成离子进行氧化膜形成热处理后的植入损伤层; 并通过随后的热处理在离子注入的损伤层中吸收金属杂质，以减少前表面侧的金属杂质浓度。因此，提供了一种以简单的方法以低成本制造其背面上具有吸气层的SOI衬底的方法。

5. 发明申请

US20110104870A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造粘结波的方法
公开(公告)号：US20110104870A1
公开(公告)日：2011-05-05
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

6. 发明申请

US20110223740A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110223740A1
公开(公告)日：2011-09-15
申请号：US13129538
申请日：2009-11-11
申请人： Tohru Ishizuka , Norihiro Kobayashi , Hiroji Aga , Nobuhiko Noto
发明人： Tohru Ishizuka , Norihiro Kobayashi , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/84 , H01L22/12 , H01L22/20 , H01L29/78603
摘要： A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.
摘要翻译：一种制造具有预定厚度的具有预定厚度的掩埋氧化物膜的SOI晶片的方法，包括：在掩埋氧化膜上形成SOI层的SOI晶片材料上进行用于减小掩埋氧化膜厚度的热处理，其中，基于通过热处理而减少的掩埋氧化膜的厚度的比率，计算要进行用于减小掩埋氧化膜的厚度的热处理的SOI晶片材料的SOI层相对于掩埋氧化膜的面内范围的变化量的允许值，由热处理引起的变化，以及通过使接合晶片的厚度变薄而获得的SOI晶片材料，使得具有计算出的厚度对SOI层进行热处理，以减小掩埋氧化膜的厚度。

7. 发明申请

US20100132205A1 METHOD FOR MEASURING ROTATION ANGLE OF BONDED WAFER 有权
标题翻译：用于测量粘结角的旋转角的方法
公开(公告)号：US20100132205A1
公开(公告)日：2010-06-03
申请号：US12452070
申请日：2008-07-03
申请人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： G01B5/24
CPC分类号： H01L21/76251 , H01L22/12 , H01L23/544 , H01L2223/54426 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided.
摘要翻译：本发明提供了一种用于测量接合晶片的旋转角度的方法，其中每个具有指示在其外边缘处形成的晶体取向的切口的基底晶片和接合晶片以期望的旋转角度彼此接合，利用缺口，观察到相对于通过降低接合晶片的膜厚而制造的接合晶片，从接合晶片的中心观察到的接合晶片的凹口的位置方向，观察到具有减小的膜厚度的接合晶片的轮廓通过利用轮廓来计算贴合晶片，计算出计算的接合晶片的凹口的位置方向与基底晶片的凹口的位置方向之间形成的角度，以及基底晶片和接合晶片的旋转角度被测量。结果，可以提供用于测量接合晶片的旋转角度的方法，其能够准确且容易地测量接合晶片制造线中的基底晶片和接合晶片的切口的旋转角度。

8. 发明授权

US08097523B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US08097523B2
公开(公告)日：2012-01-17
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

9. 发明授权

US07861421B2 Method for measuring rotation angle of bonded wafer 有权
标题翻译：测量接合晶片旋转角度的方法
公开(公告)号：US07861421B2
公开(公告)日：2011-01-04
申请号：US12452070
申请日：2008-07-03
申请人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： G01B5/24 , G01B7/30
CPC分类号： H01L21/76251 , H01L22/12 , H01L23/544 , H01L2223/54426 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided.
摘要翻译：本发明提供了一种用于测量接合晶片的旋转角度的方法，其中每个具有指示在其外边缘处形成的晶体取向的切口的基底晶片和接合晶片以期望的旋转角度彼此接合，利用缺口，观察到相对于通过降低接合晶片的膜厚而制造的接合晶片，从接合晶片的中心观察到的接合晶片的凹口的位置方向，观察到具有减小的膜厚度的接合晶片的轮廓通过利用轮廓来计算贴合晶片，计算出计算的接合晶片的凹口的位置方向与基底晶片的凹口的位置方向之间形成的角度，以及基底晶片和接合晶片的旋转角度被测量。结果，可以提供用于测量接合晶片的旋转角度的方法，其能够准确且容易地测量接合晶片制造线中的基底晶片和接合晶片的切口的旋转角度。

10. 发明申请

US20100314722A1 SOI WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER，SEMICONDUCTOR DEVICE，AND METHOD FOR MANUIFACTURE OF SOI WAFER
公开(公告)号：US20100314722A1
公开(公告)日：2010-12-16
申请号：US12867922
申请日：2009-02-19
申请人： Tohru Ishizuka , Nobuhiko Noto , Norihiro Kobayashi , Masatake Nakano
发明人： Tohru Ishizuka , Nobuhiko Noto , Norihiro Kobayashi , Masatake Nakano
IPC分类号： H01L29/04 , H01L21/762
CPC分类号： H01L21/76254 , H01L29/045 , H01L29/78603
摘要： The present invention is an SOI wafer comprising at least: an SOI layer; a silicon oxide film; and a base wafer, wherein the SOI layer has a plane orientation of (100), and the base wafer has a resistivity of 100 Ω·cm or more and a plane orientation different from (100). As a result, there is provided the SOI wafer and the manufacturing method thereof that have no complicated manufacturing step, defects on a bonding interface which are not practically a problem in number and a high interface state density (Dit) for trapping carriers on an interface of a BOX layer and the base wafer.
摘要翻译：本发明是至少包括SOI层的SOI晶片; 氧化硅膜; 以及基底晶片，其中所述SOI层具有（100）的平面取向，并且所述基底晶片的电阻率为100Ω·cm·cm以上且平面取向不同于（100）。结果，提供了没有复杂的制造步骤的SOI晶片及其制造方法，接合界面上的缺陷在数量上几乎不成问题，并且用于在接口上捕获载体的高界面态密度（Dit）的BOX层和基底晶片。

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