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    • 2. 发明申请
    • SCRIBING DEVICE AND METHOD OF PRODUCING A THIN-FILM SOLAR CELL MODULE
    • 筛选装置和制造薄膜太阳能电池模块的方法
    • US20100190275A1
    • 2010-07-29
    • US12362281
    • 2009-01-29
    • Tobias RepmannAxel Straub
    • Tobias RepmannAxel Straub
    • H01L21/66H01L31/18H01L21/02H01L21/20
    • H01L31/206H01L31/046Y02E10/50Y02P70/521
    • A laser scribing device is provided which comprises at least a laser light source. The laser light source may generate a laser beam for scribing cell lines to form a patterned solar cell module. Furthermore, the laser may emit a light beam for generating a light spot on the surface of the solar cell module. The light beam may be modulated compared with the light beam used for the scribing process. By means of the light spot a particular region of the active area of the solar cell module may be illuminated, and the voltage VOC (L) may be measured at a voltage measurement device. The voltage measurement device is connected between the negative contact area and the positive contact area of the solar cell module. The measured voltage VOC (L) depends on the location of the laser spot on the solar cell module and the intensity of the laser spot.
    • 提供了至少包括激光光源的激光划线装置。 激光光源可以产生用于划线细胞系的激光束以形成图案化的太阳能电池模块。 此外,激光器可以发射用于在太阳能电池模块的表面上产生光斑的光束。 与用于划线过程的光束相比,可以调制光束。 通过光点,可以照射太阳能电池模块的有效区域的特定区域,并且可以在电压测量装置处测量电压VOC(L)。 电压测量装置连接在负极接触区域和太阳能电池模块的正接触区域之间。 测量电压VOC(L)取决于激光光斑在太阳能电池模块上的位置和激光光斑的强度。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE
    • 半导体器件和半导体器件的制造方法
    • US20100096012A1
    • 2010-04-22
    • US12256113
    • 2008-10-22
    • Axel Straub
    • Axel Straub
    • H01L31/0203H01L31/18H01L31/0232
    • H01L31/076B32B17/10036B32B17/10211B32B17/10623B32B17/10761B32B17/10798H01L31/03685H01L31/03762H01L31/048H01L31/056H01L31/068H01L31/075Y02E10/52Y02E10/545Y02E10/547Y02E10/548
    • A photovoltaic module is a glass-glass thin film solar cell. It comprises a transparent glass substrate arranged on the front side of the module, i.e., in the direction of the light source. A layer system is deposited on the substrate which comprises a front electrode layer, e.g., a TCO layer, an active semiconductor layer and a second electrode layer, which may also be a TCO (transparent conductive oxide) layer. The active semiconductor layer comprises semiconducting areas of different conductivity type and a junction between these areas. The junction may be a p-n or a p-i-n junction between a p-doped area and an n-doped area. The layer system is sandwiched between the glass substrate and a glass encapsulation element. The glass encapsulation element is bonded to the substrate and the layer system, respectively, by means of a bonding layer. According to the invention the bonding layer is configured as a white lambertian back reflector. It may consist of a PVB (poly vinyl butyral) or a silicon material layer and an appropriate dye or pigment, e.g., titanium-dioxide, embedded in the PVB of silicon material layer.
    • 光伏组件是玻璃 - 玻璃薄膜太阳能电池。 它包括布置在模块的前侧,即在光源的方向上的透明玻璃基板。 在衬底上沉积层系,该衬底包括也可以是TCO(透明导电氧化物)层的前电极层,例如TCO层,有源半导体层和第二电极层。 有源半导体层包括不同导电类型的半导体区域和这些区域之间的连接点。 结可以是p掺杂区域和n掺杂区域之间的p-n或p-i-n结。 层系统夹在玻璃基板和玻璃封装元件之间。 玻璃封装元件通过粘合层分别结合到基底和层系统。 根据本发明,结合层被配置为白色朗伯背后反射器。 它可以由PVB(聚乙烯醇缩丁醛)或硅材料层以及嵌入硅材料层的PVB中的合适的染料或颜料(例如二氧化钛)组成。
    • 7. 发明申请
    • Fabrication method for crystalline semiconductor films on foreign substrates
    • 国外基板上晶体半导体膜的制造方法
    • US20060252235A1
    • 2006-11-09
    • US10530848
    • 2003-10-07
    • Armin AberlePer Ingemar WidenborgAxel StraubDirk-Holger NeuhausOliver HartleyNils-Peter Harder
    • Armin AberlePer Ingemar WidenborgAxel StraubDirk-Holger NeuhausOliver HartleyNils-Peter Harder
    • H01L21/20H01L21/36
    • H01L21/2022H01L31/182Y02E10/546Y02P70/521
    • The invention provides a method of forming a polycrystalline semiconductor film on a supporting substrate of foreign material. The method involves depositing a metal film onto the substrate, forming a film of metal oxide and/or hydroxide on a substrate of the metal, and forming a layer of an amorphous semiconductor material over a surface of the metal oxide and/or hydroxide film. The entire sample is then heated to a temperature at which the semiconductor layer is absorbed into the metal layer and deposited as a polycrystalline layer onto the target surface by metal-induced crystallization. The metal is left as an overlayer covering the deposited polycrystalline layer, with semiconductor inclusions in the metal layer. The polycrystalline semiconductor film and the overlayer are generated by porous interfacial metal oxide nd/or hydroxide film. The metal in the overlayer and the interfacial metal oxide and/or hydroxide film are then removed with an etch which underetches the semiconductor inclusions to form freestanding islands. Finally, the freestanding semiconductor “islands” are removed from the surface of the polycrystalline semiconductor layer by a lift-off process.
    • 本发明提供了在异物的支撑基板上形成多晶半导体膜的方法。 该方法包括在衬底上沉积金属膜,在金属的衬底上形成金属氧化物和/或氢氧化物的膜,并在金属氧化物和/或氢氧化物膜的表面上形成非晶半导体材料层。 然后将整个样品加热到半导体层被吸收到金属层中并通过金属诱导结晶作为多晶层沉积到靶表面上的温度。 留下金属作为覆盖沉积的多晶层的覆盖层,在金属层中具有半导体夹杂物。 多晶半导体膜和覆盖层由多孔界面金属氧化物nd /或氢氧化物膜产生。 然后用蚀刻去除覆盖层中的金属和界面金属氧化物和/或氢氧化物膜,该蚀刻不影响半导体夹杂物以形成独立的岛。 最后,通过剥离工艺从多晶半导体层的表面去除独立的半导体“岛”。