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1. 发明授权

US07694262B2 Deep trench capacitor and method of making same 失效
标题翻译：深沟槽电容器及其制作方法
公开(公告)号：US07694262B2
公开(公告)日：2010-04-06
申请号：US11872787
申请日：2007-10-16
申请人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M. Shank , Francis Roger White
发明人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M. Shank , Francis Roger White
IPC分类号： G06F17/50
CPC分类号： H01L29/945 , H01L29/66181
摘要： A trench capacitor, method of forming a trench capacitor and a design structure for a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.
摘要翻译：沟槽电容器，形成沟槽电容器的方法以及沟槽电容器的设计结构。所述沟槽电容器包括：单晶硅衬底中的沟槽，在所述沟槽的侧壁和底部上的保形电介质衬垫; 填充未被衬垫填充的沟槽区域的导电多晶硅内板; 衬底中的导电掺杂外板，其围绕所述沟槽的侧壁和底部; 衬底中的掺杂硅区域; 在所述衬底的顶表面上暴露的所述掺杂硅区域的表面区域上的第一导电金属硅化物层; 在所述内板的在所述基板的顶表面处暴露的表面区域上的第二导电金属硅化物层; 以及在所述第一和第二金属硅化物层之间的所述衬底的顶表面上的绝缘环。

2. 发明申请

US20080315274A1 DEEP TRENCH CAPACITOR AND METHOD OF MAKING SAME 有权
标题翻译：深度电容电容器及其制造方法
公开(公告)号：US20080315274A1
公开(公告)日：2008-12-25
申请号：US11767616
申请日：2007-06-25
申请人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M. Shank , Francis Roger White
发明人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M. Shank , Francis Roger White
IPC分类号： H01L29/92 , H01L21/20
CPC分类号： H01L29/945 , H01L28/40
摘要： A trench capacitor and method of forming a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.
摘要翻译：沟槽电容器和形成沟槽电容器的方法。所述沟槽电容器包括：单晶硅衬底中的沟槽，在所述沟槽的侧壁和底部上的保形电介质衬垫; 填充未被衬垫填充的沟槽区域的导电多晶硅内板; 衬底中的导电掺杂外板，其围绕所述沟槽的侧壁和底部; 衬底中的掺杂硅区域; 在所述衬底的顶表面上暴露的所述掺杂硅区域的表面区域上的第一导电金属硅化物层; 在所述内板的在所述基板的顶表面处暴露的表面区域上的第二导电金属硅化物层; 以及在所述第一和第二金属硅化物层之间的所述衬底的顶表面上的绝缘环。

3. 发明授权

US07812388B2 Deep trench capacitor and method of making same 有权
标题翻译：深沟槽电容器及其制作方法
公开(公告)号：US07812388B2
公开(公告)日：2010-10-12
申请号：US11767616
申请日：2007-06-25
申请人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M Shank , Francis Roger White
发明人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M Shank , Francis Roger White
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/945 , H01L28/40
摘要： A trench capacitor and method of forming a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.
摘要翻译：沟槽电容器和形成沟槽电容器的方法。所述沟槽电容器包括：单晶硅衬底中的沟槽，在所述沟槽的侧壁和底部上的保形电介质衬垫; 填充未被衬垫填充的沟槽区域的导电多晶硅内板; 衬底中的导电掺杂外板，其围绕所述沟槽的侧壁和底部; 衬底中的掺杂硅区域; 在所述衬底的顶表面上暴露的所述掺杂硅区域的表面区域上的第一导电金属硅化物层; 在所述内板的在所述基板的顶表面处暴露的表面区域上的第二导电金属硅化物层; 以及在所述第一和第二金属硅化物层之间的所述衬底的顶表面上的绝缘环。

4. 发明申请

US20090100388A1 DEEP TRENCH CAPACITOR AND METHOD OF MAKING SAME 失效
标题翻译：深度电容电容器及其制造方法
公开(公告)号：US20090100388A1
公开(公告)日：2009-04-16
申请号：US11872787
申请日：2007-10-16
申请人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M. Shank , Francis Roger White
发明人： Timothy Wayne Kemerer , Robert Mark Rassel , Steven M. Shank , Francis Roger White
IPC分类号： G06F9/45
CPC分类号： H01L29/945 , H01L29/66181
摘要： A trench capacitor, method of forming a trench capacitor and a design structure for a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.
摘要翻译：沟槽电容器，形成沟槽电容器的方法以及沟槽电容器的设计结构。所述沟槽电容器包括：单晶硅衬底中的沟槽，在所述沟槽的侧壁和底部上的保形电介质衬垫; 填充未被衬垫填充的沟槽区域的导电多晶硅内板; 衬底中的导电掺杂外板，其围绕所述沟槽的侧壁和底部; 衬底中的掺杂硅区域; 在所述衬底的顶表面上暴露的所述掺杂硅区域的表面区域上的第一导电金属硅化物层; 在所述内板的在所述基板的顶表面处暴露的表面区域上的第二导电金属硅化物层; 以及在所述第一和第二金属硅化物层之间的所述衬底的顶表面上的绝缘环。

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