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1. 发明申请

US20130071580A1 Activated Silicon Precursors For Low Temperature Deposition 有权
标题翻译：活性硅前体用于低温沉积
公开(公告)号：US20130071580A1
公开(公告)日：2013-03-21
申请号：US13609551
申请日：2012-09-11
申请人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
发明人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了使用卤化或氰化硅烷沉积SiN膜的方法。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

2. 发明授权

US08821986B2 Activated silicon precursors for low temperature deposition 有权
标题翻译：用于低温沉积的活性硅前体
公开(公告)号：US08821986B2
公开(公告)日：2014-09-02
申请号：US13609551
申请日：2012-09-11
申请人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
发明人： Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
IPC分类号： C23C16/50 , C23C16/34 , C23C16/505 , C23C16/36
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了使用卤化或氰化硅烷沉积SiN膜的方法。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

3. 发明申请

US20120122302A1 Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films 失效
标题翻译：碳化硅和碳氮化硅薄膜沉积的装置和方法
公开(公告)号：US20120122302A1
公开(公告)日：2012-05-17
申请号：US13288157
申请日：2011-11-03
申请人： Timothy W. Weidman , Todd Schroeder
发明人： Timothy W. Weidman , Todd Schroeder
IPC分类号： H01L21/20 , C23C16/50
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/02274 , H01L21/0228 , H01L21/02329 , H01L21/0234 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了在基板表面上沉积碳化硅膜的方法。这些方法包括使用气相碳硅烷前体，并且可以采用等离子体增强的原子层沉积工艺。该方法可以在低于600℃，例如约23℃至约200℃或约100℃的温度下进行。然后可以将该碳化硅层致密化以除去氢含量。此外，碳化硅层可以暴露于氮源以提供反应性N-H基团，其然后可以用于使用其他方法继续膜沉积。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

4. 发明申请

US20130065404A1 Carbosilane Precursors For Low Temperature Film Deposition 失效
标题翻译：用于低温膜沉积的碳硅烷前体
公开(公告)号：US20130065404A1
公开(公告)日：2013-03-14
申请号：US13609867
申请日：2012-09-11
申请人： Timothy W. Weidman , Todd Schroeder
发明人： Timothy W. Weidman , Todd Schroeder
IPC分类号： H01L21/314 , H01L21/318
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.
摘要翻译：提供了使用含有桥连至少两个硅原子的碳原子的碳硅烷前体来低温沉积含硅膜的方法。某些方法包括提供基底; 在PECVD工艺中，将衬底表面暴露于含有至少一个桥连至少两个硅原子的碳原子的碳硅烷前体; 将碳硅烷前体暴露于低功率能量源直流等离子体，以在基底表面提供碳硅烷; 并致密化至少一些氢原子的碳硅烷取代以提供包含SiC的膜。可以将SiC膜暴露于碳硅烷表面至氮源，以提供包含SiCN的膜。

5. 发明申请

US20140038427A1 Carbosilane Precursors For Low Temperature Film Deposition 审中-公开
标题翻译：用于低温膜沉积的碳硅烷前体
公开(公告)号：US20140038427A1
公开(公告)日：2014-02-06
申请号：US14048166
申请日：2013-10-08
申请人： Timothy W. Weidman , Todd Schroeder
发明人： Timothy W. Weidman , Todd Schroeder
IPC分类号： H01L21/02
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.
摘要翻译：提供了使用含有桥连至少两个硅原子的碳原子的碳硅烷前体来低温沉积含硅膜的方法。某些方法包括提供基底; 在PECVD工艺中，将衬底表面暴露于含有至少一个桥连至少两个硅原子的碳原子的碳硅烷前体; 将碳硅烷前体暴露于低功率能量源直流等离子体，以在基底表面提供碳硅烷; 并致密化至少一些氢原子的碳硅烷取代以提供包含SiC的膜。可以将SiC膜暴露于碳硅烷表面至氮源，以提供包含SiCN的膜。

6. 发明授权

US08440571B2 Methods for deposition of silicon carbide and silicon carbonitride films 失效
标题翻译：沉积碳化硅和碳氮化硅薄膜的方法
公开(公告)号：US08440571B2
公开(公告)日：2013-05-14
申请号：US13288157
申请日：2011-11-03
申请人： Timothy W. Weidman , Todd Schroeder
发明人： Timothy W. Weidman , Todd Schroeder
IPC分类号： H01L21/302
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/02274 , H01L21/0228 , H01L21/02329 , H01L21/0234 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了在基板表面上沉积碳化硅膜的方法。这些方法包括使用气相碳硅烷前体，并且可以采用等离子体增强的原子层沉积工艺。该方法可以在低于600℃，例如约23℃至约200℃或约100℃的温度下进行。然后可以将该碳化硅层致密化以除去氢含量。此外，碳化硅层可以暴露于氮源以提供反应性N-H基团，其然后可以用于使用其他方法继续膜沉积。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

7. 发明授权

US09394414B2 Elastic, moisture-vapor permeable films, their preparation and their use 有权
标题翻译：弹性，透湿膜，其制备及其用途
公开(公告)号：US09394414B2
公开(公告)日：2016-07-19
申请号：US12893145
申请日：2010-09-29
申请人： John Flood , Richard Blackwell , Martin Ehrlich , Todd Schroeder , Jerzy Gumulka
发明人： John Flood , Richard Blackwell , Martin Ehrlich , Todd Schroeder , Jerzy Gumulka
IPC分类号： C08L25/08 , C08L53/00 , C08J5/18 , C09D153/02 , C08L53/02 , B32B5/24 , B32B27/00 , B32B27/12 , B32B27/28 , B32B27/30
CPC分类号： C08J5/18 , B01D53/228 , B01D53/268 , B01D69/12 , B01D71/26 , B01D71/28 , B01D71/82 , B32B5/245 , B32B27/00 , B32B27/12 , B32B27/28 , B32B27/302 , B32B2255/102 , B32B2260/046 , B32B2307/51 , B32B2307/724 , B32B2307/7265 , B32B2437/00 , B32B2535/00 , C08F8/04 , C08F8/36 , C08J2353/02 , C08L53/02 , C08L53/025 , C08L2205/02 , C08L2205/025 , C09D153/025 , Y10T442/2139 , C08F297/046
摘要： The present disclosure relates to films such as membranes and coatings and to coated articles. The films comprise a combination of at least one elastomeric styrenic block copolymer which is optionally functionalized with functional groups different from sulfonic acid or sulfonate ester functional groups, and at least one sulfonated block copolymer. Films comprising the optionally functionalized block copolymer(s) and the additional sulfonated block copolymer(s) are elastic and are moisture-vapor permeable, and thus useful as coatings in breathable clothing and footwear, industrial workwear including cleanroom coveralls, in medical applications such as wound dressings and protective clothing, for bed sheets and mattress or seat covers, and other non-apparel applications.
摘要翻译：本公开涉及膜，例如膜和涂层以及涂覆制品。膜包含至少一种弹性体苯乙烯嵌段共聚物的组合，其任选地与不同于磺酸或磺酸酯官能团的官能团官能化，和至少一种磺化嵌段共聚物。包含任选官能化的嵌段共聚物和另外的磺化嵌段共聚物的薄膜是弹性的并且是透湿的，因此可用作透气衣服和鞋类中的涂层，包括洁净室工作服的工业工作服，在诸如伤口敷料和防护服，用于床单和床垫或座椅套，以及其他非服装应用。

8. 发明申请

US20120077400A1 Elastic, Moisture-Vapor Permeable Films, their Preparation and their Use 有权
标题翻译：弹性，水分透过膜，其制备及其用途
公开(公告)号：US20120077400A1
公开(公告)日：2012-03-29
申请号：US12893145
申请日：2010-09-29
申请人： John Flood , Richard Blackwell , Martin Ehrlich , Todd Schroeder , Jerzy Gumulka
发明人： John Flood , Richard Blackwell , Martin Ehrlich , Todd Schroeder , Jerzy Gumulka
IPC分类号： C08L53/00 , B32B5/28 , C08L25/08
CPC分类号： C08J5/18 , B01D53/228 , B01D53/268 , B01D69/12 , B01D71/26 , B01D71/28 , B01D71/82 , B32B5/245 , B32B27/00 , B32B27/12 , B32B27/28 , B32B27/302 , B32B2255/102 , B32B2260/046 , B32B2307/51 , B32B2307/724 , B32B2307/7265 , B32B2437/00 , B32B2535/00 , C08F8/04 , C08F8/36 , C08J2353/02 , C08L53/02 , C08L53/025 , C08L2205/02 , C08L2205/025 , C09D153/025 , Y10T442/2139 , C08F297/046
摘要： The present disclosure relates to films such as membranes and coatings and to coated articles. The films comprise a combination of at least one elastomeric styrenic block copolymer which is optionally functionalized with functional groups different from sulfonic acid or sulfonate ester functional groups, and at least one sulfonated block copolymer. Films comprising the optionally functionalized block copolymer(s) and the additional sulfonated block copolymer(s) are elastic and are moisture-vapor permeable, and thus useful as coatings in breathable clothing and footwear, industrial workwear including cleanroom coveralls, in medical applications such as wound dressings and protective clothing, for bed sheets and mattress or seat covers, and other non-apparel applications.
摘要翻译：本公开涉及膜，例如膜和涂层以及涂覆制品。膜包含至少一种弹性体苯乙烯嵌段共聚物的组合，其任选地与不同于磺酸或磺酸酯官能团的官能团官能化，和至少一种磺化嵌段共聚物。包含任选官能化的嵌段共聚物和另外的磺化嵌段共聚物的薄膜是弹性的并且是透湿的，因此可用作透气衣服和鞋类中的涂层，包括洁净室工作服的工业工作服，在诸如伤口敷料和防护服，用于床单和床垫或座椅套，以及其他非服装应用。

9. 发明申请

US20140353449A1 Apparatus for cushioning corners and related methods 审中-公开
标题翻译：用于缓冲角落的装置及相关方法
公开(公告)号：US20140353449A1
公开(公告)日：2014-12-04
申请号：US14294917
申请日：2014-06-03
申请人： Todd Schroeder
发明人： Todd Schroeder
IPC分类号： A47B95/04
CPC分类号： A47B95/043
摘要： Generally disclosed are apparatus and related methods for blunting sharp corners or otherwise reducing the force of an impact with sharp corners. In one embodiment, the apparatus may generally be in the form of a creature with at least a torso and four appendages defined internally by a skeleton of foam members having a bendable metal core. In use, the appendages may be bent around corners so that the torso of the creature removably, yet securely, resides over the corner whereby the corners are blunted or otherwise the force of impacts with the corner are reduced (e.g., the foam and other components of the apparatus may act as a shock absorber). In a preferred embodiment, a stomach portion of the torso features a non-slip padding that may receive the corner to be blunted to further secure the apparatus over the targeted corner.
摘要翻译：通常公开的是用于使锐角变钝的装置和相关方法，或以其他方式减小尖锐角落的冲击力。在一个实施例中，该装置通常可以是至少具有躯干和四个附件的生物的形式，内部由具有可弯曲金属芯的泡沫构件的骨架限定。在使用中，附件可以在角落周围弯曲，使得生物的躯干可移除地牢固地位于拐角处，由此拐角被钝化，或者与角部的冲击力减小（例如，泡沫和其它部件的装置可以用作减震器）。在优选实施例中，躯体的胃部具有防滑填充物，其可以接收待钝化的拐角以进一步将装置固定在目标角上。

10. 发明授权

US08575033B2 Carbosilane precursors for low temperature film deposition 失效
标题翻译：用于低温膜沉积的碳硅烷前体
公开(公告)号：US08575033B2
公开(公告)日：2013-11-05
申请号：US13609867
申请日：2012-09-11
申请人： Timothy W. Weldman , Todd Schroeder
发明人： Timothy W. Weldman , Todd Schroeder
IPC分类号： H01L21/302
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.
摘要翻译：提供了使用含有桥连至少两个硅原子的碳原子的碳硅烷前体来低温沉积含硅膜的方法。某些方法包括提供基底; 在PECVD工艺中，将衬底表面暴露于含有至少一个桥连至少两个硅原子的碳原子的碳硅烷前体; 将碳硅烷前体暴露于低功率能量源直流等离子体，以在基底表面提供碳硅烷; 并致密化至少一些氢原子的碳硅烷取代以提供包含SiC的膜。可以将SiC膜暴露于碳硅烷表面至氮源，以提供包含SiCN的膜。

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