专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06984263B2 Shallow melt apparatus for semicontinuous czochralski crystal growth 失效
标题翻译：用于半连续切克萨斯基晶体生长的浅熔体装置
公开(公告)号：US06984263B2
公开(公告)日：2006-01-10
申请号：US10494482
申请日：2001-11-01
申请人： Tihu Wang , Theodore F. Ciszek
发明人： Tihu Wang , Theodore F. Ciszek
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B15/02 , C30B15/12 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088
摘要： In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.
摘要翻译：在用于提供切克劳斯基晶体生长工艺的单晶拉制装置中，改进浅熔体坩埚（20），以消除必须提供大量必须预先装入深坩埚中的原料来生长大锭，包括具有加深的周边（25）的坩埚的气密容器，以防止浅熔体的咬合并减少湍流的熔融对流; 用于将源材料添加到半导体熔体的源供给装置; 双壁障（23），以最小化加深的周边（25）和生长室中的浅熔体之间的热传递; 在双重屏障（23）中的偏移孔（24），以增加加深的周边（25）和浅生长室之间的熔体移动长度; 和界面加热器/散热器（22），以控制界面形状和晶体生长速率。

2. 发明授权

US06281098B1 Process for Polycrystalline film silicon growth 失效
标题翻译：多晶硅硅生长工艺
公开(公告)号：US06281098B1
公开(公告)日：2001-08-28
申请号：US09334166
申请日：1999-06-15
申请人： Tihu Wang , Theodore F. Ciszek
发明人： Tihu Wang , Theodore F. Ciszek
IPC分类号： H01L2120
CPC分类号： C30B29/06 , C01B33/039 , C23C16/24 , C23C16/4402 , C23C16/4418 , C23C16/4488 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/28525
摘要： A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.
摘要翻译：在大气压的室中发生包括异质衬底的衬底上沉积多晶硅的方法，其中形成温度梯度，并且在整个过程中保持大气压力和温度梯度。在室内形成阻止组分化学品（包括硅，碘，二碘化二硅和四碘化硅）排出的蒸气阻挡层。沉积发生在蒸汽屏障下方。该方法的一个实施方案还包括使用阻止氧气或其他杂质进入的覆盖气体的用途。该过程能够重复，而不需要重置沉积区条件。

3. 发明授权

US06468886B2 Purification and deposition of silicon by an iodide disproportionation reaction 有权
标题翻译：通过碘化物歧化反应对硅进行纯化和沉积
公开(公告)号：US06468886B2
公开(公告)日：2002-10-22
申请号：US09941490
申请日：2001-08-28
申请人： Tihu Wang , Theodore F. Ciszek
发明人： Tihu Wang , Theodore F. Ciszek
IPC分类号： H01L2120
CPC分类号： C30B29/06 , C01B33/039 , C23C16/24 , C23C16/4402 , C23C16/4418 , C23C16/4488 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/28525
摘要： Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.
摘要翻译：在大气压下从高纯度冶金级硅源材料生产纯化体硅的方法和装置。方法包括：（1）首先使碘和冶金级硅反应，在冷壁反应器室中产生四碘化硅和杂质碘化物副产物; （2）从杂质碘化物副产物中分离出四碘化硅，并通过蒸馏在蒸馏室中进行纯化; 和（3）将纯化的四碘化硅转移回冷壁反应器室，使其与另外的碘和冶金级硅反应以产生二碘化硅，并将硅二碘化物沉积到冷壁反应器室内的基底上。两个室处于大气压力下，系统是开放的，以允许引入额外的源材料并去除和替换成品的基材。

4. 发明授权

US06712908B2 Purified silicon production system 有权
标题翻译：净化硅生产系统
公开(公告)号：US06712908B2
公开(公告)日：2004-03-30
申请号：US10243503
申请日：2002-09-13
申请人： Tihu Wang , Theodore F. Ciszek
发明人： Tihu Wang , Theodore F. Ciszek
IPC分类号： C23C1600
CPC分类号： C30B29/06 , C01B33/039 , C23C16/24 , C23C16/4402 , C23C16/4418 , C23C16/4488 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/28525
摘要： Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.
摘要翻译：在大气压下从高纯度冶金级硅源材料生产纯化体硅的方法和装置。方法包括：（1）首先使碘和冶金级硅反应，在冷壁反应器室中产生四碘化硅和杂质碘化物副产物; （2）从杂质碘化物副产物中分离出四碘化硅，并通过蒸馏在蒸馏室中进行纯化; 和（3）将纯化的四碘化硅转移回冷壁反应器室，使其与另外的碘和冶金级硅反应以产生二碘化硅，并将硅二碘化物沉积到冷壁反应器室内的基底上。两个室处于大气压力下，系统是开放的，以允许引入额外的源材料并去除和替换成品的基材。

5. 发明授权

US5544616A Crystallization from high temperature solutions of Si in Cu/Al solvent 失效
标题翻译：在Cu / Al溶剂中由Si的高温溶液结晶
公开(公告)号：US5544616A
公开(公告)日：1996-08-13
申请号：US249957
申请日：1994-05-27
申请人： Theodore F. Ciszek , Tihu Wang
发明人： Theodore F. Ciszek , Tihu Wang
IPC分类号： C30B19/02 , H01L21/208
CPC分类号： H01L21/02532 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02625 , H01L21/02628
摘要： A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
摘要翻译：一种用于形成具有小于3×10 16 Cu原子/ cc杂质的器件质量硅的薄晶层的液相外延方法，包括：在Cu / Al溶剂中在约20至约40at下制备Si的饱和液体溶液。％Si，在约850℃至约1100℃的温度范围内; 将基板浸入或部分浸渍在饱和液体溶液中; 通过降低饱和溶液的温度使溶液过饱和; 将基板保持在饱和溶液中足以使Si沉淀出溶液并在基板上形成Si的结晶层的时间; 并从溶液中取出底物。

6. 发明授权

US08642450B2 Low temperature junction growth using hot-wire chemical vapor deposition 有权
标题翻译：使用热线化学气相沉积的低温结生长
公开(公告)号：US08642450B2
公开(公告)日：2014-02-04
申请号：US12742001
申请日：2007-11-09
申请人： Qi Wang , Matthew Page , Eugene Iwaniczko , Tihu Wang , Yanfa Yan
发明人： Qi Wang , Matthew Page , Eugene Iwaniczko , Tihu Wang , Yanfa Yan
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
摘要翻译：用于形成半导体器件的系统和工艺，以及由此形成的太阳能电池（10）。该方法包括制备用于沉积接合层（14）的衬底（12）。使用热线化学气相沉积在衬底（12）上形成接合层（14）; 并完成半导体器件。

7. 发明申请

US20100263717A1 Low Temperature Junction Growth Using Hot-Wire Chemical Vapor Deposition 有权
标题翻译：使用热线化学气相沉积的低温结生长
公开(公告)号：US20100263717A1
公开(公告)日：2010-10-21
申请号：US12742001
申请日：2007-11-09
申请人： Qi Wang , Matthew Page , Eugene Iwaniczko , Tihu Wang , Yanfa Yan
发明人： Qi Wang , Matthew Page , Eugene Iwaniczko , Tihu Wang , Yanfa Yan
IPC分类号： H01L31/0352 , H01L21/20 , H01L29/02 , H01L21/205
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
摘要翻译：用于形成半导体器件的系统和工艺，以及由此形成的太阳能电池（10）。该方法包括制备用于沉积接合层（14）的衬底（12）。使用热线化学气相沉积在衬底（12）上形成接合层（14）; 并完成半导体器件。

8. 发明授权

US07629236B2 Method for passivating crystal silicon surfaces 失效
标题翻译：钝化晶体硅表面的方法
公开(公告)号：US07629236B2
公开(公告)日：2009-12-08
申请号：US11574167
申请日：2004-08-26
申请人： Qi Wang , Tihu Wang , Matthew R. Page , Yanfa Yan
发明人： Qi Wang , Tihu Wang , Matthew R. Page , Yanfa Yan
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： H01L31/072 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.
摘要翻译：在制备c-Si基电池或粘硅基电池的方法中，提高少数电荷载体寿命的方法包括：a）将c-Si或多晶硅晶片放入低于CVD反应室的CVD反应室真空条件，并对晶片的基板进行加热; 和b）将包含NH 3 / H 2的混合气体在低真空压力下通过反应室持续足够的时间和足够的流速以使a-Si：H层的生长足以增加c-Si的寿命或多晶硅晶体超过a-Si：H层生长的晶胞，而不用NH 3 / H 2处理晶片。

9. 发明申请

US20100059117A1 HYBRID SILICON SOLAR CELLS AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：混合硅太阳能电池及其制造方法
公开(公告)号：US20100059117A1
公开(公告)日：2010-03-11
申请号：US12526385
申请日：2007-02-08
申请人： Zhengrong Shi , Tihu Wang
发明人： Zhengrong Shi , Tihu Wang
IPC分类号： H01L31/18 , H01L31/00
CPC分类号： H01L31/0745 , H01L31/022433 , H01L31/074 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell is provided in which an amorphous semiconductor layer (15) is located on a back surface of a crystalline silicon structure to form a heterojunction. A first contact structure contacts the crystalline layer (14) and a second contact structure contacts the amorphous layer (15). A method of forming the heterojunction solar cell is also provided in which a doped amorphous semiconductor layer (15) is formed on an oppositely doped crystalline silicon layer (14), to form a rear surface heterojunction with the crystalline silicon layer (14). Subsequently a rear surface contact (16) is formed, to contact to the amorphous semiconductor layer (15), and a heavily doped region (13) of the same conductivity type as the crystalline silicon layer (14) is formed in contact with the crystalline silicon layer (14) wherever metal contacts (10) are required contact the crystalline silicon layer (14) to facilitate contact with the subsequently formed metal contact (10).
摘要翻译：提供一种太阳能电池，其中非晶半导体层（15）位于结晶硅结构的背面上以形成异质结。第一接触结构接触晶体层（14），第二接触结构接触非晶层（15）。还提供了一种形成异质结太阳能电池的方法，其中掺杂的非晶半导体层（15）形成在相对掺杂的晶体硅层（14）上，以与晶体硅层（14）形成后表面异质结。随后，形成与该非晶半导体层（15）接触的后表面接触（16），并且与晶体硅层（14）相同的导电类型的重掺杂区域（13）形成为与晶体需要金属触点（10）的任何地方的硅层（14）与结晶硅层（14）接触以便于与随后形成的金属触点（10）的接触。

10. 发明申请

US20080092951A1 Method for Passivating Crystal Silicon Surfaces 失效
标题翻译：钝化晶体硅表面的方法
公开(公告)号：US20080092951A1
公开(公告)日：2008-04-24
申请号：US11574167
申请日：2004-08-26
申请人： Qi Wang , Tihu Wang , Matthew R. Page , Yanfa Yan
发明人： Qi Wang , Tihu Wang , Matthew R. Page , Yanfa Yan
IPC分类号： H01L21/20
CPC分类号： H01L31/072 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.
摘要翻译：在制备c-Si基电池或粘硅基电池的方法中，提高少数电荷载体寿命的方法包括：a）将c-Si或多晶硅晶片放入低于CVD反应室的CVD反应室真空条件，并对晶片的基板进行加热; 和b）将包含NH 3 / H 2 N 2的混合气体在低真空压力下通入反应室足够的时间并以足够的流速使得 a-Si：H层，其足以增加c-Si或多晶硅电池的寿命超过a-Si：H层生长的寿命，而不用NH 3 / H 3 SUB> 2 。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式