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1. 发明授权

US08630033B2 Via structure and method thereof 有权
标题翻译：其结构及其方法
公开(公告)号：US08630033B2
公开(公告)日：2014-01-14
申请号：US13166621
申请日：2011-06-22
申请人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin , Thomas Ericson
发明人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin , Thomas Ericson
IPC分类号： G02B26/08
CPC分类号： G02B26/0841 , B81B7/0006 , B81B2201/042 , B81B2201/045 , H01L23/481 , H01L2924/0002 , H02N1/006 , H01L2924/00
摘要： A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
摘要翻译：分层微电子和/或微机械结构包括在导电层之间具有绝缘层的至少三个交替导电层。还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。该装置具有根据本发明的分层结构。还提供了制造这种分层MEMS结构的方法。

2. 发明申请

US20120019886A1 VIA STRUCTURE AND METHOD THEREOF 有权
标题翻译：通过其结构和方法
公开(公告)号：US20120019886A1
公开(公告)日：2012-01-26
申请号：US13166621
申请日：2011-06-22
申请人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin , Thomas Ericson
发明人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin , Thomas Ericson
IPC分类号： G02B26/08 , H02N1/00
CPC分类号： G02B26/0841 , B81B7/0006 , B81B2201/042 , B81B2201/045 , H01L23/481 , H01L2924/0002 , H02N1/006 , H01L2924/00
摘要： A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
摘要翻译：分层微电子和/或微机械结构包括在导电层之间具有绝缘层的至少三个交替导电层。还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。该装置具有根据本发明的分层结构。还提供了制造这种分层MEMS结构的方法。

3. 发明授权

US08729713B2 Via structure and method thereof 有权
标题翻译：其结构及其方法
公开(公告)号：US08729713B2
公开(公告)日：2014-05-20
申请号：US13193313
申请日：2011-07-28
申请人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin
发明人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin
IPC分类号： H01L23/48 , H01L27/14 , H01L21/30
CPC分类号： G02B26/0841 , B81B7/0006 , B81B2201/042 , B81B2203/04 , B81B2207/096 , G02B26/101
摘要： A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).
摘要翻译：用于半导体器件的中间产品中的通气孔前体结构（26）具有精细的结构（27,28），并且所述中间产品具有其中不同于周围压力的压力的空腔（21）。中间产品包括其中形成有凹部（21）的第一晶片（20）。第一晶片被结合到包括器件层（23）的第二晶片（22）上，通过蚀刻从该器件层（23）制造结构（27,28）。具有预定深度的孔或凹槽（26）向下延伸到装置层中，使得蚀刻过程中的空腔（21）在蚀刻过程突破穿过器件层（23）之前被打开以形成结构（27,28 ）。

4. 发明申请

US20120018898A1 VIA STRUCTURE AND METHOD THEREOF 有权
标题翻译：通过其结构和方法
公开(公告)号：US20120018898A1
公开(公告)日：2012-01-26
申请号：US13141609
申请日：2009-12-23
申请人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin
发明人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin
IPC分类号： H01L23/498 , H01L21/762 , H01L21/768
CPC分类号： G02B26/0833 , B81B7/0006 , B81B7/007 , B81B2207/092 , B81B2207/095 , G02B6/3518 , G02B6/3584 , G02B26/0841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
摘要翻译：本发明涉及分层的微电子和/或微机械结构，其包括在导电层之间具有绝缘层的至少三个交替的导电层。还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。该装置具有根据本发明的分层结构。还提供了制造这种分层MEMS结构的方法。

5. 发明申请

US20120018852A1 VIA STRUCTURE AND METHOD THEREOF 有权
标题翻译：通过其结构和方法
公开(公告)号：US20120018852A1
公开(公告)日：2012-01-26
申请号：US13193313
申请日：2011-07-28
申请人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin
发明人： Thorbjörn Ebefors , Edvard Kälvesten , Peter Agren , Niklas Svedin
IPC分类号： H01L23/498 , H01L21/30
CPC分类号： G02B26/0841 , B81B7/0006 , B81B2201/042 , B81B2203/04 , B81B2207/096 , G02B26/101
摘要： A vent hole precursor structure (26) in an intermediate product for a semi-conductor device has delicate structures (27, 28), and said intermediate product has a cavity (21) with a pressure therein differing from the pressure of the surroundings. The intermediate product comprises a first wafer (20) in which there is formed a depression (21). The first wafer is bonded to a second wafer (22) comprising a device layer (23) from which the structures (27, 28) are to be made by etching. A hole or groove (26) having a predefined depth extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) to form the structures (27, 28).
摘要翻译：用于半导体器件的中间产品中的通气孔前体结构（26）具有精细的结构（27,28），并且所述中间产品具有其中不同于周围压力的压力的空腔（21）。中间产品包括其中形成有凹部（21）的第一晶片（20）。第一晶片被结合到包括器件层（23）的第二晶片（22）上，通过蚀刻从该器件层（23）制造结构（27,28）。具有预定深度的孔或凹槽（26）向下延伸到装置层中，使得蚀刻过程中的空腔（21）在蚀刻过程突破穿过器件层（23）之前被打开以形成结构（27,28 ）。

6. 发明授权

US06732487B2 Post processing closure cap application 失效
标题翻译：后处理封盖应用
公开(公告)号：US06732487B2
公开(公告)日：2004-05-11
申请号：US09989596
申请日：2001-11-20
申请人： Hichem Bouraoui , Dave Anchor , Peter Agren
发明人： Hichem Bouraoui , Dave Anchor , Peter Agren
IPC分类号： B67B106
CPC分类号： B65B7/2835
摘要： A post processing cap applicator for applying a cap to a closure spout after erection, spout attachment, filling and sealing of a carton accommodates custom caps. Cartons are conveyed through the applicator in a first forward direction. A cap supply is configured to dispense caps and to position an edge of a cap in a path defined by movement of the closure spout through the applicator. The closure spout engages the edge of the cap. The applicator includes a rotating, torque-applying element and a drive operably connected to the torque-applying element. The drive is operable in a first direction to tighten the cap onto the spout to a predetermined torque and, once the predetermined torque is reached, to stop tightening the cap. A method for post processing cap application is also disclosed.
摘要翻译：用于在安装，喷嘴附接，纸箱的填充和密封之后将盖施加到封闭口的后处理盖施加器适应定制盖。纸箱在第一向前的方向上被输送通过施加器。帽供应器构造成分配盖子并且将盖的边缘定位在由封闭出口通过施加器的运动限定的路径中。封闭口接合盖的边缘。施加器包括旋转的扭矩施加元件和可操作地连接到转矩施加元件的驱动器。驱动器可在第一方向上操作以将盖紧固到喷口上达预定扭矩，并且一旦达到预定扭矩就停止紧固盖。还公开了后处理帽应用的方法。

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