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1. 发明申请

US20050081564A1 Fused quartz article having controlled devitrification 审中-公开
标题翻译：具有控制失透的熔融石英制品
公开(公告)号：US20050081564A1
公开(公告)日：2005-04-21
申请号：US11007765
申请日：2004-12-08
申请人： Thomas McNulty , David Pender , Victor Lou , Robert Giddings , Frederic Ahlgren
发明人： Thomas McNulty , David Pender , Victor Lou , Robert Giddings , Frederic Ahlgren
IPC分类号： C03C17/04 , C03B32/02 , C03C10/00 , C03C10/14 , C03C17/23 , C30B35/00 , C03C8/00
CPC分类号： C30B35/002 , C03B32/02 , C03C10/0009 , C03C17/23 , C03C2217/213 , C03C2217/24
摘要： A fused quartz article, such as a muffle tube or crucible, with enhanced creep resistance. The enhanced creep resistance is the result of controlled devitrification of the fused quartz article. Controlled devitrification is achieved by coating the article with a colloidal silica slurry doped with metal cations, such as barium, strontium, and calcium. The metal cations in the slurry promote nucleation and growth of cristobalite crystals into the fused quartz at temperatures in the range from about 1000° C. to about 1600° C. The cristobalite has significantly. higher viscosity, and therefore greater creep resistance at elevated temperatures, than fused quartz. Methods for applying a doped coating to a fused quartz article and improving the creep resistance of a fused quartz article are also disclosed.
摘要翻译：熔融石英制品，如马弗管或坩埚，具有增强的抗蠕变性。增强的抗蠕变性是熔融石英制品的控制失透的结果。通过用掺杂有金属阳离子如钡，锶和钙的胶体二氧化硅浆料涂覆制品来实现控制失透。浆料中的金属阳离子在约1000℃至约1600℃的温度范围促进方英石晶体的成核和生长。比熔融石英更高的粘度，因此在升高的温度下具有更大的抗蠕变性。还公开了将掺杂涂层施加到熔融石英制品并提高熔融石英制品的抗蠕变性的方法。

2. 发明申请

US20050039490A1 Optical fiber deposition tube fused in deuterium atmosphere for attenuation improvement 有权
标题翻译：融合在氘气氛中的光纤沉积管用于衰减改善
公开(公告)号：US20050039490A1
公开(公告)日：2005-02-24
申请号：US10957922
申请日：2004-10-04
申请人： Larry Zeng , Victor Lou , Frederic Ahlgren , Anil Duggal
发明人： Larry Zeng , Victor Lou , Frederic Ahlgren , Anil Duggal
IPC分类号： C03B5/02 , C03B5/12 , C03B5/173 , C03B17/04 , C03B32/00 , C03B37/014 , C03B37/018 , C03B37/02
CPC分类号： C03B37/01892 , C03B5/021 , C03B5/12 , C03B5/173 , C03B17/04 , C03B32/00 , C03B37/01493 , C03B2201/22
摘要： A silica deposition tube is fused in a deuterium (D2) gas atmosphere and optionally baked in a deuterium (D2) gas atmosphere to substantially reduce the hydrogen content in the tube for decreased fiber attenuation. Alternatively, raw silica material is pre-treated in D2 gas followed by fusing of the raw silica tube in a D2 gas environment.
摘要翻译：将二氧化硅沉积管熔合在氘（D2）气体气氛中，并任选地在氘（D2）气体气氛中烘烤，以显着降低管中的氢含量以减少纤维衰减。或者，将原料二氧化硅材料在D2气体中进行预处理，然后在D2气体环境中熔融原料二氧化硅管。

3. 发明申请

US20060048699A1 Apparatus for producing single crystal and quasi-single crystal, and associated method 有权
标题翻译：用于生产单晶和准单晶的装置及其相关方法
公开(公告)号：US20060048699A1
公开(公告)日：2006-03-09
申请号：US11249896
申请日：2005-10-13
申请人： Mark D'Evelyn , Dong-Sil Park , Victor Lou , Thomas McNulty , Huicong Hong
发明人： Mark D'Evelyn , Dong-Sil Park , Victor Lou , Thomas McNulty , Huicong Hong
IPC分类号： C30B28/06 , C30B21/02 , C30B7/00
CPC分类号： C30B29/403 , B82Y10/00 , B82Y30/00 , C30B7/00 , C30B9/00 , C30B29/406 , Y10T117/1052 , Y10T117/1096
摘要： An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.
摘要翻译：提供一种包括坩埚，能量源和控制器的装置。该坩埚可以密封到含氮气体，并且在约400摄氏度至约2500摄氏度的温度范围内，至少可以在至少氨的化学惰性。能量源可以向坩埚提供热能。控制器可以控制能量源以选择性地将足够的热能引导到坩埚内的预定义的第一体积，以获得并将第一体积中的温度维持在从约400摄氏度到约2500摄氏度的范围内。热能可能足以启动，维持或同时启动和维持晶体在第一体积中的生长。第一体积中的第一温度可以与坩埚内的另一体积中的第二温度分开控制。第一温度和第二温度彼此不同。提供相关方法。

4. 发明申请

US20060037529A1 Single crystal and quasi-single crystal, composition, apparatus, and associated method 审中-公开
标题翻译：单晶和准单晶，组成，装置和相关方法
公开(公告)号：US20060037529A1
公开(公告)日：2006-02-23
申请号：US11249872
申请日：2005-10-13
申请人： Mark D'Evelyn , Dong-Sil Park , Victor Lou , Thomas McNulty
发明人： Mark D'Evelyn , Dong-Sil Park , Victor Lou , Thomas McNulty
IPC分类号： C30B15/00 , C30B30/04 , C30B28/10 , C30B27/02 , C30B21/06
CPC分类号： C30B29/403 , B82Y10/00 , B82Y30/00 , C30B7/00 , C30B9/00 , C30B29/406 , Y10T117/1052 , Y10T117/1096
摘要： A single crystal or quasi-single crystal including one or more Group III material and an impurity. The impurity includes one or more elements from Group IA, Group IIA, Groups IIIB to VIIB, Group VIII, Group IB, Group IIB, or Group VIIA elements of the periodic table of elements. A composition for forming a crystal is also provided. The composition includes a source material comprising a Group III element, and a flux comprising one or more of P, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Pd, Ag, Hf, Ta, W, Pt, Au, Hg, Ge, or Sb; or the flux may comprise a rare earth metal.
摘要翻译：包括一种或多种III族材料和杂质的单晶或准单晶。杂质包括元素周期表第IA族，第IIA族，第IIIB至VIIB族，VIII族，IB族，IIB族或IIA族元素的一种或多种元素。还提供了一种用于形成晶体的组合物。该组合物包括含有III族元素的源材料和包含P，Rb，Cs，Mg，Ca，Sr，Ba，Sc，Ti，V，Cr，Mn，Fe，Co，Ni中的一种或多种的助熔剂， Cu，Zn，Y，Zr，Nb，Mo，Pd，Ag，Hf，Ta，W，Pt，Au，Hg，Ge或Sb; 或者焊剂可以包括稀土金属。

5. 发明申请

US20070148367A1 Chemical vapor deposition apparatus and methods of using the apparatus 审中-公开
标题翻译：化学气相沉积装置及其使用方法
公开(公告)号：US20070148367A1
公开(公告)日：2007-06-28
申请号：US11315710
申请日：2005-12-22
申请人： Daniel Lewis , Victor Lou , George Dalakos , Matthew Saylor , Scott Weaver , Michael Rucker
发明人： Daniel Lewis , Victor Lou , George Dalakos , Matthew Saylor , Scott Weaver , Michael Rucker
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/482 , C23C16/4404
摘要： A chemical vapor deposition apparatus comprises a heating element capable of emitting electromagnetic radiation; a retort positioned relative to the heating element to receive the electromagnetic radiation; an encasing member at least partially disposed around the retort, the encasing member comprising a material that is at least partially transparent to the electromagnetic radiation; a plenum defined at least in part by an inner surface of the encasing member and an outer surface of the retort; and a furnace box at least partially disposed around the encasing member and the retort, and housing the heating element.
摘要翻译：化学气相沉积装置包括能够发射电磁辐射的加热元件; 相对于加热元件定位的蒸馏器以接收电磁辐射; 至少部分地设置在所述蒸馏器周围的所述包装部件，所述包装部件包括对所述电磁辐射至少部分透明的材料; 至少部分地由所述包装部件的内表面和所述蒸馏器的外表面限定的增压室; 以及至少部分地围绕所述包装构件和所述蒸馏器设置的炉箱，并且容纳所述加热元件。

6. 发明申请

US20060051602A1 Coating structure and method 失效
标题翻译：涂层结构及方法
公开(公告)号：US20060051602A1
公开(公告)日：2006-03-09
申请号：US11249085
申请日：2005-10-12
申请人： Charles Iacovangelo , Victor Lou
发明人： Charles Iacovangelo , Victor Lou
IPC分类号： B32B15/04 , C23C16/00 , B05D1/36 , B32B9/00 , B32B19/00
CPC分类号： C04B41/009 , C04B41/5031 , C04B41/5063 , C04B41/52 , C04B41/87 , C04B41/89 , C23C14/0617 , C23C14/22 , C23C16/303 , C23C16/4404 , C23C16/4581 , C23C16/513 , H01L21/68757 , Y10T428/30 , C04B41/4529 , C04B41/4531 , C04B41/5064 , C04B41/5057 , C04B41/522 , C04B35/522 , C04B35/583
摘要： A coating structure including an outer coating comprising aluminum; and an interlayer disposed between a substrate and the outer coating is provided. The interlayer may include a rare earth metal, a transition metal, or a noble metal. The interlayer may have one or more property of being less responsive to halogen etching relative to the outer coating; having a coefficient of thermal expansion that is greater than the coefficient of thermal expansion of the substrate and less than the coefficient of thermal expansion of the outer coating or vice versa; having a color different from the color of the outer coating; having a electrical conductivity different from the electrical conductivity of the outer coating. A method of making is article is provided. The method may include securing an interlayer to a substrate surface, and securing an outer coating to a surface of the interlayer opposite the substrate.
摘要翻译：一种涂层结构，包括包含铝的外涂层; 并且设置在基板和外涂层之间的中间层。中间层可以包括稀土金属，过渡金属或贵金属。中间层可以具有一个或多个相对于外涂层对卤素蚀刻响应较小的性质; 具有大于衬底热膨胀系数的热膨胀系数小于外涂层的热膨胀系数，反之亦然; 具有与外涂层的颜色不同的颜色; 具有不同于外涂层的导电性的导电性。制作方法是提供文章。该方法可以包括将中间层固定到基底表面，以及将外涂层固定到与基底相对的层间表面。

7. 发明授权

US06546754B1 Apparatus for silica crucible manufacture 有权
标题翻译：二氧化硅坩埚制造设备
公开(公告)号：US06546754B1
公开(公告)日：2003-04-15
申请号：US09698415
申请日：2000-10-27
申请人： Richard L. Hansen , Fred D'Orazio , Victor Lou , George Coleman
发明人： Richard L. Hansen , Fred D'Orazio , Victor Lou , George Coleman
IPC分类号： C03B2000
CPC分类号： C03B19/095
摘要： An apparatus for manufacture of quartz crucibles comprising a hollow mold having a bottom wall portion and a side wall portion and defining a hollow space therein. The walls of the mold include a plurality of openings to facilitate gas passage therethrough. A rotatable support of the mold is provided to rotate the mold about a vertical axis. A vacuum is applied through the walls of the mold to draw quartz particles against the walls and remove gas. A shroud surrounds at least a portion of the hollow mold; at least one gas inlet positioned to provide a gas to a space between the shroud and the mold. A housing overlaps at least a portion of the shroud and the hollow mold. At least one gas outlet is positioned to exhaust gas which may exit the space between the shroud and the mold. Alternatively, or in addition to the outlet, a space may be provided between the housing (hood) and the shroud to facilitate gas discharge. In manufacturing a crucible in this apparatus, the gas flow can be balanced so the in-flow rate of control gas is in excess of the exhaust rate from the controlled atmosphere via the outlet or space.
摘要翻译：一种用于制造石英坩埚的装置，包括具有底壁部分和侧壁部分并在其中限定中空空间的中空模具。模具的壁包括多个开口以便于气体通过。提供模具的可旋转支撑件以围绕垂直轴线旋转模具。通过模具的壁施加真空以将石英颗粒吸附在壁上并除去气体。护罩围绕中空模具的至少一部分; 至少一个气体入口，定位成向罩和模具之间的空间提供气体。壳体与护罩和中空模具的至少一部分重叠。至少一个气体出口定位成排出可能离开护罩和模具之间的空间的废气。或者除了出口之外，还可以在壳体（罩）和护罩之间设置一个空间，以便于排气。在该装置中制造坩埚时，可以平衡气流，使得控制气体的流入速率超过从受控气氛通过出口或空间排出的排气速率。

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