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1. 发明授权

US07537676B2 Cathode apparatus to selectively bias pallet during sputtering 有权
标题翻译：用于在溅射期间选择性地偏置托板的阴极装置
公开(公告)号：US07537676B2
公开(公告)日：2009-05-26
申请号：US10844653
申请日：2004-05-12
申请人： Thomas Larson Greenberg , Paul Stephen McLeod
发明人： Thomas Larson Greenberg , Paul Stephen McLeod
IPC分类号： C23C14/35
CPC分类号： C23C14/024 , C23C14/165 , C23C14/568 , G11B5/851 , H01J37/32779 , H01J37/34
摘要： A system and method for sputtering having a substrate holder, the target-cathode and the shield that are all electrically isolated from each other and are all capable of independently being subjected to different voltages. The substrate holder can be a pallet that holds a plurality of substrates. The system further includes a plurality of target-cathodes and shields disposed along the path of travel of the moving substrate holder, and a controller configured to selectively vary the target-cathode voltage, the shield voltage, and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes and shields are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage and shield voltage.
摘要翻译：一种用于溅射的系统和方法，其具有彼此电隔离的基板保持器，靶阴极和屏蔽层，并且都能够独立地经受不同的电压。基板保持器可以是保持多个基板的托盘。该系统还包括沿着移动的衬底保持器的行进路径设置的多个靶阴极和屏蔽件，以及控制器，被配置为在托盘移动时选择性地改变目标阴极电压，屏蔽电压和托盘偏置电压沿途旅行。目标阴极和屏蔽沿着行进路径间隔一段距离小于托盘的长度和行进路径的两侧。控制器可以包括用于使目标阴极电压的变化与托盘偏置电压和屏蔽电压的变化同步的定时电路。

2. 发明授权

US09865440B1 Sputtering shield 有权
公开(公告)号：US09865440B1
公开(公告)日：2018-01-09
申请号：US12955851
申请日：2010-11-29
申请人： Stan Kassela , Wei Xu , Lim Boon Leong , Liu Hao Jun , Chun Wai Tong , Weilu H. Xu , Thomas Larson Greenberg , Antonio Javier Zambano , Robin Andrew Davies
发明人： Stan Kassela , Wei Xu , Lim Boon Leong , Liu Hao Jun , Chun Wai Tong , Weilu H. Xu , Thomas Larson Greenberg , Antonio Javier Zambano , Robin Andrew Davies
IPC分类号： H01J37/34 , C23C14/34
CPC分类号： H01J37/3447 , C23C14/3407 , C23C14/35 , H01J37/3405
摘要： A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.

3. 发明申请

US20100006420A1 INLINE INTERLAYER HEATER APPARATUS 审中-公开
标题翻译：在线INTERLAYER加热器装置
公开(公告)号：US20100006420A1
公开(公告)日：2010-01-14
申请号：US12169154
申请日：2008-07-08
申请人： Thomas Larson Greenberg , Thanh Thien Ha , Larry Douglas Monroe , Sam Vi Luong , Chinh Thien Dao , Hung Tuan Nguyen
发明人： Thomas Larson Greenberg , Thanh Thien Ha , Larry Douglas Monroe , Sam Vi Luong , Chinh Thien Dao , Hung Tuan Nguyen
IPC分类号： C23C14/00
CPC分类号： C23C14/541 , H01J37/32522 , H01J37/34
摘要： An apparatus for making a magnetic recording medium, including a quartz lamp within a sputtering chamber to heat the medium between the application of layers and without disruption to the vacuum integrity of the sputtering system. A process using the apparatus for manufacturing the magnetic recording medium is also claimed.
摘要翻译：一种用于制造磁记录介质的装置，包括在溅射室内的石英灯，以在施加层之间加热介质，而不破坏溅射系统的真空完整性。还要求保护使用该磁记录介质制造装置的方法。

4. 发明申请

US20130337176A1 NANO-SCALE VOID REDUCTION 审中-公开
标题翻译： NANO-SCALE VOID减少
公开(公告)号：US20130337176A1
公开(公告)日：2013-12-19
申请号：US13527584
申请日：2012-06-19
申请人： Justin Jia-Jen Hwu , Gennady Gauzner , Thomas Larson Greenberg
发明人： Justin Jia-Jen Hwu , Gennady Gauzner , Thomas Larson Greenberg
IPC分类号： B05D5/00 , B05C9/12 , B05D3/12
CPC分类号： G03F7/0002
摘要： Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.
摘要翻译：抗蚀刻印痕空隙缩小法可包括密封腔室。室可以填充有环境惰性气体，其中惰性气体在基板上的抗蚀剂层中的溶解度大于氦。该方法还可以包括在室内建立足以使抗蚀剂层吸收环境惰性气体并足以抑制抗蚀剂层蒸发的压力。

5. 发明申请

US20120181165A1 IN-SITU GAS INJECTION FOR LINEAR TARGETS 审中-公开
标题翻译：线性目标的原位气体注入
公开(公告)号：US20120181165A1
公开(公告)日：2012-07-19
申请号：US13007335
申请日：2011-01-14
申请人： Thomas Larson Greenberg , Elizabeth Dawn Lawrence
发明人： Thomas Larson Greenberg , Elizabeth Dawn Lawrence
IPC分类号： C23C14/34
CPC分类号： H01J37/3411 , C23C14/34 , H01J37/34
摘要： A system and method for in-situ introduction of gas into a vacuum deposition chamber having a target with a length/width form factor ratio greater than 1 includes a plurality of manifolds arranged around the target to deliver a gas to the vacuum chamber. A gas supply is coupled to the manifolds, and a mass flow controller couples each manifold to the gas supply. Each manifold includes a plurality of orifices for introducing gas into the vacuum chamber from the manifold. The method includes arranging a plurality of manifolds around the target, providing a gas supply to the manifolds, controlling a flow rate of the gas with a mass flow controller between each manifold and the gas supply, introducing the gas into the vacuum chamber through orifices in the manifolds, and locating the manifolds and orifices on each manifold to introduce the gas in a controlled arranged manner about the target.
摘要翻译：用于将气体原位引入具有长度/宽度形状因子比大于1的靶的真空沉积室的系统和方法包括围绕靶设置的多个歧管，以将气体输送到真空室。气体供应联接到歧管，并且质量流量控制器将每个歧管连接到气体供应。每个歧管包括用于从歧管将气体引入真空室的多个孔。该方法包括在目标周围布置多个歧管，向歧管提供气体供应，通过每个歧管和气体供应之间的质量流量控制器来控制气体的流量，通过孔中的孔将气体引入真空室歧管，并将歧管和孔口定位在每个歧管上，以围绕目标的受控布置的方式引入气体。

6. 发明申请

US20100018855A1 INLINE CO-SPUTTER APPARATUS 审中-公开
公开(公告)号：US20100018855A1
公开(公告)日：2010-01-28
申请号：US12179131
申请日：2008-07-24
申请人： Jeffrey Shane Reiter , Stephen Eric Barlow , Thomas Larson Greenberg , Keith Kadokura , Matthew James Cross
发明人： Jeffrey Shane Reiter , Stephen Eric Barlow , Thomas Larson Greenberg , Keith Kadokura , Matthew James Cross
IPC分类号： C23C14/34
CPC分类号： C23C14/3464 , C23C14/225 , C23C14/562
摘要： Disclosed is an apparatus and process within a pass-by sputtering chamber, in which standard cathodes and two or more specially-sized cathodes within the sputtering chamber, mounted colinear with the direction of travel of substrates within the sputtering chamber, enabling performance of rapid adjustment of material deposited on a substrate.
摘要翻译：公开了一种在通过溅射室内的设备和工艺，其中标准阴极和溅射室内的两个或更多特殊尺寸的阴极与溅射室内的衬底的行进方向一起安装，使得能够快速调节的材料沉积在基底上。

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