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1. 发明申请

US20070042603A1 Method for etching having a controlled distribution of process results 有权
标题翻译：具有受控分配处理结果的蚀刻方法
公开(公告)号：US20070042603A1
公开(公告)日：2007-02-22
申请号：US11367004
申请日：2006-03-02
申请人： Thomas Kropewnicki , Theodoros Panagopoulos , Nicolas Gani , Wilfred Pau , Meihua Shen , John Holland
发明人： Thomas Kropewnicki , Theodoros Panagopoulos , Nicolas Gani , Wilfred Pau , Meihua Shen , John Holland
IPC分类号： G01L21/30 , H01L21/302
CPC分类号： H01L21/32137 , H01L22/20
摘要： Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.
摘要翻译：本发明的实施例通常提供蚀刻衬底的方法。在一个实施例中，该方法包括确定对应于衬底上的蚀刻副产物的均匀沉积速率的衬底温度目标分布，优选地调节衬底支撑件的第一部分相对于衬底支撑件的第二部分的温度以获得衬底上的衬底温度目标曲线，并且在优先调节的衬底支撑件上蚀刻衬底。在另一个实施例中，该方法包括在处理室中提供衬底，该处理室具有在处理室内的物质的可选择分布以及具有侧向温度控制的衬底支撑件，其中由衬底支撑件引导的温度曲线和物种分布的选择包括控制参数集，蚀刻第一层材料并使用不同的控制参数集分别蚀刻第二层材料。

2. 发明申请

US20050241762A1 Alternating asymmetrical plasma generation in a process chamber 审中-公开
标题翻译：处理室中的交替不对称等离子体产生
公开(公告)号：US20050241762A1
公开(公告)日：2005-11-03
申请号：US11060980
申请日：2005-02-18
申请人： Alexander Paterson , Elizabeth Pavel , Valentin Todorow , Huong Nguyen , Thomas Kropewnicki , Brian Hatcher , John Holland
发明人： Alexander Paterson , Elizabeth Pavel , Valentin Todorow , Huong Nguyen , Thomas Kropewnicki , Brian Hatcher , John Holland
IPC分类号： C23F1/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165
摘要： Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.
摘要翻译：本发明的实施例通常提供蚀刻或CVD等离子体处理方法和装置，用于通过调制脉冲输送到在等离子体处理室中发现的多个等离子体控制装置的功率来在衬底的表面上产生均匀的等离子体。在等离子体处理室中产生和/或维持的等离子体是由一个或多个等离子体控制装置产生的，这些等离子体控制装置用于在等离子体处理步骤期间通过使用从等离子体处理室输送的能量来控制，产生，增强和/或形成等离子体射频电源。等离子体控制装置可以包括例如一个或多个线圈（电感耦合等离子体），一个或多个电极（电容耦合等离子体）和/或任何其它能量输入装置，例如微波源。

3. 发明申请

US20080023443A1 ALTERNATING ASYMMETRICAL PLASMA GENERATION IN A PROCESS CHAMBER 审中-公开
标题翻译：在过程室中替代非对称等离子体生成
公开(公告)号：US20080023443A1
公开(公告)日：2008-01-31
申请号：US11766067
申请日：2007-06-20
申请人： Alexander Paterson , Elizabeth Pavel , Valentin Todorow , Huong Nguyen , Thomas Kropewnicki , Brian Hatcher , John Holland
发明人： Alexander Paterson , Elizabeth Pavel , Valentin Todorow , Huong Nguyen , Thomas Kropewnicki , Brian Hatcher , John Holland
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165
摘要： Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.
摘要翻译：本发明的实施例通常提供蚀刻或CVD等离子体处理方法和装置，用于通过调制脉冲输送到在等离子体处理室中发现的多个等离子体控制装置的功率来在衬底的表面上产生均匀的等离子体。在等离子体处理室中产生和/或维持的等离子体是由一个或多个等离子体控制装置产生的，这些等离子体控制装置用于在等离子体处理步骤期间通过使用从等离子体处理室输送的能量来控制，产生，增强和/或形成等离子体射频电源。等离子体控制装置可以包括例如一个或多个线圈（电感耦合等离子体），一个或多个电极（电容耦合等离子体）和/或任何其它能量输入装置，例如微波源。

4. 发明申请

US20070293044A1 PATTERNING 3D FEATURES IN A SUBSTRATE 失效
标题翻译：在基板中绘制3D特征
公开(公告)号：US20070293044A1
公开(公告)日：2007-12-20
申请号：US11763199
申请日：2007-06-14
申请人： Eric Perozziello , Thomas Kropewnicki , Gregory Wojcik , Andreas Goebel , Claes Bjorkman
发明人： Eric Perozziello , Thomas Kropewnicki , Gregory Wojcik , Andreas Goebel , Claes Bjorkman
IPC分类号： H01L21/302
CPC分类号： H01L21/0334 , G02B6/12002 , G02B6/136 , G02B6/4214 , H01L21/3083
摘要： Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.
摘要翻译：公开了在衬底中形成3D结构的方法。抗蚀剂层沉积在基底上。抗蚀剂层被图案化以在预定位置限定边缘。抗蚀剂被回流以形成从蚀刻延伸的锥形区域。同时对回流的抗蚀剂和衬底进行蚀刻以将回流的抗蚀剂的锥形轮廓转移到下面的衬底中以形成成角度的表面。在蚀刻消耗所有抗蚀剂之前，中断蚀刻。

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