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    • 7. 发明授权
    • Semiconductor component with integrated hall effect sensor
    • 具有集成霍尔效应传感器的半导体元件
    • US08222679B2
    • 2012-07-17
    • US12593493
    • 2008-03-26
    • Thomas UhligFelix FuernhammerChristoph Ellmers
    • Thomas UhligFelix FuernhammerChristoph Ellmers
    • H01L29/66
    • H01L27/22G01R33/07H01L43/065
    • A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration.
    • 在半导体衬底上具有集成电路的半导体器件包括第一有源区中的霍尔效应传感器和第二有源区中的横向高压MOS晶体管。 本发明的半导体器件的特征在于,集成霍尔效应传感器的结构与高电压DMOS晶体管的结构密切相关。 集成的霍尔效应传感器具有与本身已知的具有双重RESURF结构的已知高压DMOS晶体管相似的特征。 霍尔效应传感器的控制触点对应于高压DMOS晶体管的源极和漏极触点。 本发明的半导体器件允许简化工艺集成。
    • 8. 发明申请
    • SEMICONDUCTOR COMPONENT WITH INTEGRATED HALL EFFECT SENSOR
    • 具有集成霍尔效应传感器的半导体元件
    • US20110127583A1
    • 2011-06-02
    • US12593493
    • 2008-03-26
    • Thomas UhligFelix FuernhammerChristoph Ellmers
    • Thomas UhligFelix FuernhammerChristoph Ellmers
    • H01L27/22
    • H01L27/22G01R33/07H01L43/065
    • A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration.
    • 在半导体衬底上具有集成电路的半导体器件包括第一有源区中的霍尔效应传感器和第二有源区中的横向高压MOS晶体管。 本发明的半导体器件的特征在于,集成霍尔效应传感器的结构与高电压DMOS晶体管的结构密切相关。 集成的霍尔效应传感器具有与本身已知的具有双重RESURF结构的已知高压DMOS晶体管相似的特征。 霍尔效应传感器的控制触点对应于高压DMOS晶体管的源极和漏极触点。 本发明的半导体器件允许简化工艺集成。