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1. 发明授权

US5859274A Anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same 失效
标题翻译：用于沉积含铋膜的无水单核三（β-二酮）铋组合物及其制备方法
公开(公告)号：US5859274A
公开(公告)日：1999-01-12
申请号：US960915
申请日：1997-10-30
申请人： Thomas H. Baum , Gautam Bhandari , Margaret Chappuis
发明人： Thomas H. Baum , Gautam Bhandari , Margaret Chappuis
IPC分类号： C07F9/94
CPC分类号： C07F9/94
摘要： Anhydrous mononuclear tris(.beta.-diketonato)bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(.beta.-diketonato)bismuth complexes of the prior art.
摘要翻译：与从双核三（β-二酮）衍生的薄膜获得的薄膜相比，无水单核三（β-二酮）铋络合物可用作铋的化学气相沉积的前体，用于生产显着改善的化学计量，形态和功能特征的含Bi薄膜，现有技术的铋络合物。

2. 发明授权

US6015917A Tantalum amide precursors for deposition of tantalum nitride on a substrate 失效
标题翻译：用于在衬底上沉积氮化钽的钽酰胺前体
公开(公告)号：US6015917A
公开(公告)日：2000-01-18
申请号：US12679
申请日：1998-01-23
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/00 , C23C14/06 , C23C14/48 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/02 , C30B25/10 , C07F7/28 , C07F19/00
CPC分类号： C30B25/02 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/105 , C30B29/38
摘要： Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microlectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
摘要翻译：描述了钽和钛源试剂，包括用于通过诸如化学气相沉积，辅助化学气相沉积，离子注入，分子束外延和快速热处理的方法在衬底上沉积氮化钽材料的钽酰胺和钽氮化硅前体。可以使用前体在微电子器件结构上形成扩散阻挡层，使得能够在器件结构中使用铜金属化和铁电薄膜。

3. 发明授权

US6005127A Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films 失效
标题翻译：用于Sb离子注入和形成锑化物薄膜的锑/路易斯碱加合物
公开(公告)号：US6005127A
公开(公告)日：1999-12-21
申请号：US977507
申请日：1997-11-24
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C07F9/90 , C23C16/18 , C30B31/22 , C07F9/70
CPC分类号： C23C16/18 , C07F9/904 , C07F9/908 , C30B31/22
摘要： An antimony/Lewis base adduct of the formula SbR.sub.3.L, wherein each R is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 perfluoroalkyl, C.sub.1 -C.sub.8 haloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.6 -C.sub.10 perfluoroaryl, C.sub.6 -C.sub.10 haloaryl, C.sub.6 -C.sub.10 cycloalkyl, substituted C.sub.6 -C.sub.10 aryl and halo; and L is a Lewis base ligand coordinating with SbR.sub.3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.
摘要翻译：式SbR3.L的锑/路易斯碱加成物，其中每个R独立地选自C 1 -C 8烷基，C 1 -C 8全氟烷基，C 1 -C 8卤代烷基，C 6 -C 10芳基，C 6 -C 10全氟芳基，C 6 -C 10卤代芳基， C 6 -C 10环烷基，取代的C 6 -C 10芳基和卤素; L是与SbR 3配位的路易斯碱配位体。本发明的加成物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子辅助化学气相沉积），离子注入，分子束外延和快速热处理，以形成含锑或锑的膜。

4. 发明授权

US5919522A Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
标题翻译：使用多胺类前体生长BaSrTiO3
公开(公告)号：US5919522A
公开(公告)日：1999-07-06
申请号：US835768
申请日：1997-04-08
申请人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
IPC分类号： C07C49/12 , C07C211/14 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/18 , C23C16/40 , C23C16/409 , C23C16/4481
摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要翻译：一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

5. 发明授权

US6146608A Stable hydride source compositions for manufacture of semiconductor devices and structures 失效
标题翻译：用于制造半导体器件和结构的稳定的氢化物源组合物
公开(公告)号：US6146608A
公开(公告)日：2000-11-14
申请号：US977225
申请日：1997-11-24
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , C23C16/448 , F17C11/00 , H01L21/205 , C01B6/00 , C07F9/90
CPC分类号： C23C16/448 , C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , F17C11/00 , H01L21/0237 , H01L21/02538 , H01L21/02549 , H01L21/0262 , F17C2203/0648 , F17C2270/0518 , Y02E60/321
摘要： A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
摘要翻译：金属氢化物衍生物，其中至少一个氢原子被氘（21H）或氚（31H）同位素代替。这种金属氢化物的金属成分可以是III，IV或V族金属或过渡金属，例如锑，铝，镓，锡或锗。本发明的同位素稳定的金属氢化物衍生物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子 - 辅助化学气相沉积），离子注入，分子束外延和快速热处理。

6. 发明授权

US5916359A Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition 失效
标题翻译：用于液体输送化学气相沉积的烷烃和多胺溶剂组合物
公开(公告)号：US5916359A
公开(公告)日：1999-06-29
申请号：US975372
申请日：1997-11-20
申请人： Thomas H. Baum , Gautam Bhandari
发明人： Thomas H. Baum , Gautam Bhandari
IPC分类号： C09K3/00 , C23C16/18 , C23C16/40 , C23C16/448
CPC分类号： C23C16/409 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/4481 , Y10S423/14
摘要： A solvent composition useful for liquid delivery chemical vapor deposition of organometallic precursors such as .beta.-diketonate metal precursors. The solvent composition comprises a mixture of solvent species A, B and C in the proportion A:B:C wherein A is from about 3 to about 7 parts by volume, B is from about 2 to about 6 parts by volume, and C is from 0 to about 3 parts by volume, wherein A is a C.sub.6 -C.sub.8 alkane, B is a C.sub.8 -C.sub.12 alkane, and C is a glyme-based solvent (glyme, diglyme, tetraglyme, etc.) or a polyamine. The particular solvent composition including octane, decane and polyamine in an approximate 5:4:1 weight ratio is particularly usefully employed in the formation of SrBi.sub.2 Ta.sub.2 O.sub.9 films.
摘要翻译：用于液体输送化学气相沉积有机金属前体如β-二酮金属前体的溶剂组合物。溶剂组合物包含A：B：C比例的溶剂A，B和C的混合物，其中A为约3至约7体积份，B为约2至约6体积份，C为 0〜约3体积份，其中A为C6-C8烷烃，B为C8-C12烷烃，C为甘醇二甲醚溶剂（甘醇二甲醚，二甘醇二甲醚，四甘醇二甲醚等）或多胺。包含辛烷值，癸烷值和多胺重量比约5:4:1的特定溶剂组合物特别适用于形成SrBi2Ta2O9膜。

7. 发明授权

US06379748B1 Tantalum amide precursors for deposition of tantalum nitride on a substrate 失效
标题翻译：用于在衬底上沉积氮化钽的钽酰胺前体
公开(公告)号：US06379748B1
公开(公告)日：2002-04-30
申请号：US09483859
申请日：2000-01-17
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C23C1406
CPC分类号： C30B25/02 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/105 , C30B29/38
摘要： Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
摘要翻译：描述了钽和钛源试剂，包括用于通过诸如化学气相沉积，辅助化学气相沉积，离子注入，分子束外延和快速热处理的方法在衬底上沉积氮化钽材料的钽酰胺和钽氮化硅前体。可以使用前体在微电子器件结构上形成扩散阻挡层，使得能够在器件结构中使用铜金属化和铁电薄膜。

8. 发明授权

US06319565B1 Stable hydride source compositions for manufacture of semiconductor devices and structures 有权
标题翻译：用于制造半导体器件和结构的稳定的氢化物源组合物
公开(公告)号：US06319565B1
公开(公告)日：2001-11-20
申请号：US09603597
申请日：2000-06-26
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C23C800
CPC分类号： C23C16/448 , C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , F17C11/00 , F17C2203/0648 , F17C2270/0518 , H01L21/0237 , H01L21/02538 , H01L21/02549 , H01L21/0262 , Y02E60/321
摘要： A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (21H) or tritium (31H) isotope. The metal constituent of such metal hydride may, be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
摘要翻译：金属氢化物衍生物，其中至少一个氢原子被氘（21H）或氚（31H）同位素代替。这种金属氢化物的金属成分可以是III，IV或V族金属或过渡金属，例如锑，铝，镓，锡或锗。本发明的同位素稳定的金属氢化物衍生物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子 - 辅助化学气相沉积），离子注入，分子束外延和快速热处理。

9. 发明授权

US6099653A Liquid reagent delivery system with constant thermal loading of vaporizer 失效
标题翻译：具有蒸发器恒定热负荷的液体试剂输送系统
公开(公告)号：US6099653A
公开(公告)日：2000-08-08
申请号：US989873
申请日：1997-12-12
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/409
摘要： A liquid reagent delivery and vaporization system, including a housing defining a flow passage for flow of a process fluid therethrough. A vaporizer element is positioned within the housing and includes a heated vaporization surface. Liquid reagent is selectively delivered to the heated vaporization surface, to vaporize the liquid reagent and form reagent vapor for flow through the flow passage of the housing, e.g., to a chemical vapor deposition reactor for deposition of a film on a substrate. A thermal damping fluid source is arranged to selectively deliver a thermal damping fluid into the flow passage to maintain a predetermined thermal condition therein. For example, the system may be arranged to selectively terminate delivery of liquid reagent to the vaporization surface and to contemporaneously selectively initiate delivery of the thermal damping fluid into the flow passage to maintain a thermal condition thermally matches the vaporization conditions when the liquid reagent is vaporized. The use of a thermal damping fluid prevents the occurrence of undesired thermal gradients in the system when the system is cyclically operated to vaporize reagent liquid.
摘要翻译：一种液体试剂递送和蒸发系统，包括限定用于流过其中的流体流动的流动通道的壳体。蒸发器元件位于壳体内并且包括加热的蒸发表面。液体试剂被选择性地输送到加热的蒸发表面，以蒸发液体试剂并形成用于流过壳体的流动通道的试剂蒸气，例如到化学气相沉积反应器，用于在基底上沉积膜。热阻尼流体源被布置成选择性地将热阻尼流体输送到流动通道中以在其中保持预定的热条件。例如，该系统可以被布置成选择性地将液体试剂的输送终止于蒸发表面，并且同时选择性地启动热阻尼流体进入流动通道的传递，以保持热条件与液体试剂蒸发时的蒸发条件热匹配。当系统循环操作以蒸发试剂液体时，使用热阻尼流体防止系统中出现不期望的热梯度。

10. 发明授权

US6006582A Hydrogen sensor utilizing rare earth metal thin film detection element 失效
标题翻译：氢传感器利用稀土金属薄膜检测元件
公开(公告)号：US6006582A
公开(公告)日：1999-12-28
申请号：US42698
申请日：1998-03-17
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： G01N21/77 , H01L43/10 , G01N7/00 , G01N21/00 , G01N30/96 , H01L47/00
CPC分类号： H01L43/10 , G01N21/783 , G02F2202/34
摘要： A hydrogen sensor for the detection of hydrogen, e.g., in an environment susceptible to the incursion or generation of hydrogen. The sensor includes a rare earth metal thin film arranged for exposure to the environment and exhibiting a detectable change of physical property, e.g., optical transmissivity, electrical resistivity, magneto-resistance, and/or photoconductivity, when the rare earth metal thin film is contacted with hydrogen gas. The sensor may include an output assembly for converting the physical property change to a perceivable output. The rare earth metal thin film may correspondingly be used for signal processing applications, in which the rare earth metal thin film is contacted with hydrogen gas, and a predetermined voltage signal is selectively imposed across the rare earth metal thin film, to selectively electrically switch the film between mirror and window states, with a response being generated according to which of the mirror and window states is present.
摘要翻译：用于检测氢的氢传感器，例如在易于入侵或产生氢的环境中。该传感器包括稀土金属薄膜，该稀土金属薄膜布置成暴露于环境中，并且当稀土金属薄膜被接触时，其表现出可检测的物理性能变化，例如光透射率，电阻率，磁阻和/或光导电性与氢气。传感器可以包括用于将物理属性变化转换为可感知输出的输出组件。稀土金属薄膜可以相应地用于信号处理应用，其中稀土金属薄膜与氢气接触，并且预定的电压信号选择性地施加在稀土金属薄膜上，以选择性地电开关镜像和窗口状态之间的电影，根据哪个镜像和窗口状态存在响应。

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