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    • 7. 发明授权
    • Method of forming bismuth-containing films by using bismuth amide
compounds
    • 通过使用铋酰胺化合物形成含铋膜的方法
    • US5902639A
    • 1999-05-11
    • US828566
    • 1997-03-31
    • Timothy E. GlassmanGautam BhandariThomas H. Baum
    • Timothy E. GlassmanGautam BhandariThomas H. Baum
    • C07F9/94C23C16/40G02F1/00G02F1/05C23C16/00
    • G02F1/0027C07F9/94C23C16/40C23C16/407G02F1/0541G02F2203/12
    • A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.1 -C.sub.4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications.
    • 一种在基板上形成含铋材料层的方法,包括用于形成含铋源源蒸气的铋酰胺源试剂的起泡器输送或液体输送蒸发,以及从含铋源源蒸气在铋基底上沉积 以在基板上形成含铋材料层。 铋酰胺源试剂可以包括式BiL1xL2y(NR1R2)z的铋酰胺化合物其中:z是1至3的整数; x + y + z = 3; L1和L2各自独立地选自C 1 -C 4烷基,C 11-14 C 4醇盐,β-二酮酸盐,环状酰胺基,环状三烷氧基胺和C 6 -C 10芳基; R 1和R 2各自独立地选自C 1 -C 8烷基,C 1 -C 8烷氧基,C 6 -C 8环烷基,C 6 -C 10芳基,C 1 -C 4羧基和-SiR 33,其中每个R 3独立地选自H和C 1 -C 4 烷基。 本发明的含铋膜可用于构造空间光调制器件,作为用于制造铁电材料器件的缓冲层,以及介电,铁电和超导体薄膜应用。