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    • 4. 发明授权
    • Column flotation
    • 柱浮选
    • US4804460A
    • 1989-02-14
    • US162457
    • 1988-03-01
    • Michael H. MoysJames A. Finch
    • Michael H. MoysJames A. Finch
    • B03D1/02B03D1/14B03D1/24
    • B03D1/02B03D1/028B03D1/082B03D1/14B03D1/24
    • In the froth flotation of ore in a column, the froth/pulp interface level and the efficiency of the froth washing operation are controlled by determining a profile of temperatures measured in the froth layer and slurry below the interface. Temperatures are measured with temperature sensing elements immersed in the froth layer and extending to below the interface level. The measured profile is compared with a target profile and deviations are corrected by changing the tailings flowrate or the washwater flowrate to return a measured profile to the target profile. An inflection point in the profile occurs at the interface level. The inflection point in a measured profile is compared with a level set point, and a deviation from set point value is corrected by increasing or decreasing the flow of tailings whereby the interface level returns to its set point. The washwater rate is controlled by measuring the slope or the position of a measured temperature profile and comparing the measured slope or position with the slope or position of a target profile, i.e. slope or position set point, and a deviation from set point value is corrected by increasing or decreasing the flow of washwater. The washwater distribution is controlled by measuring the concentrate temperature at a plurality of points at the concentrate overflow, comparing each measured temperature with a set point value, and a deviation from set point value is corrected by adjusting the distribution of washwater. A programmed computer may be used for calculating profiles, comparing measured values with set point values and sending a signal for controlling washwater rate or distribution or tailings flow when the deviation of measured values exceeds set point values by a predetermined amount.
    • 在塔中的矿石的泡沫浮选中,通过确定在泡沫层和界面下面的浆料中测量的温度分布来控制泡沫/纸浆界面水平和泡沫洗涤操作的效率。 温度用浸入泡沫层的温度感测元件测量并延伸到界面水平以下。 将测得的轮廓与目标轮廓进行比较,并且通过改变尾矿流量或冲洗水流量来校正偏差,以将测量的轮廓返回到目标轮廓。 配置文件中的拐点发生在界面级别。 将测量轮廓中的拐点与水平设定点进行比较,通过增加或减少尾矿流量来校正与设定值的偏差,由此界面水平返回到其设定点。 通过测量测量温度曲线的斜率或位置来控制洗涤水速率,并将测量的斜率或位置与目标曲线的斜率或位置(即斜率或位置设定点)进行比较,并且校正与设定值的偏差。 通过增加或减少洗涤水的流量。 通过在浓缩物溢出处测量多个点处的浓缩温度来控制洗涤水分布,将每个测量温度与设定值进行比较,并且通过调节洗涤水的分布来校正与设定值的偏差。 编程计算机可用于计算轮廓,将测量值与设定值相比较,并且当测量值的偏差超过设定点值预定量时,发送用于控制洗涤水速率或分布或尾矿流量的信号。
    • 5. 发明授权
    • Photodiode having voltage tunable spectral response
    • 具有电压可调光谱响应的光电二极管
    • US06803557B1
    • 2004-10-12
    • US10256835
    • 2002-09-27
    • Scott M. TaylorKenneth KosaiJames A. Finch
    • Scott M. TaylorKenneth KosaiJames A. Finch
    • H01L3100
    • H01L31/1032H01L27/14618H01L27/14683H01L31/02966H01L31/101H01L31/1035H01L2924/0002H01L2924/00
    • A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of electrical conductivity; and a second layer (16) of semiconductor material overlying the first layer. The second layer contains a second dopant at a second concentration for having a second type of electrical conductivity and forms a first p-n junction (15) with the first layer. The second layer is compositionally graded through at least a portion of a thickness thereof from wider bandgap semiconductor material to narrower bandgap in a direction away from the p-n junction. The compositional grading can be done in a substantially linear fashion, or in a substantially non-linear fashion, e.g., in a stepped manner. Preferably the first dopant concentration is at least an order of magnitude greater than the second concentration, and more preferably is at least two orders of magnitude greater. When the first p-n junction is reverse biased, a depletion region (17) exists substantially only within the second layer, and varying the magnitude of the reverse bias shifts the wavelength at which a maximum spectral sensitivity or responsiveness is obtained. At least one electrical contact is provided for coupling the second layer to a source (32) of variable bias voltage for reverse biasing the p-n junction. As the magnitude of the bias voltage is changed a wavelength of electromagnetic radiation to which the photodetector is responsive is thus changed. An alternating current signal can be superimposed on the reverse DC bias voltage and a synchronous detection technique used to detect photons corresponding to a certain bandgap energy.
    • 光电检测器(10)包括具有表面的基板(12) 设置在所述表面上方的半导体材料的第一层(14),所述第一层含有第一浓度的第一掺杂剂以具有第一类型的导电性; 以及覆盖在第一层上的半导体材料的第二层(16)。 第二层含有第二浓度的第二掺杂剂,用于具有第二类型的导电性,并与第一层形成第一p-n结(15)。 第二层通过其厚度的至少一部分从宽带隙半导体材料成组分分级到在远离p-n结的方向上窄带宽。 组成分级可以以基本上线性的方式进行,或者以基本上非线性的方式,例如以阶梯式方式进行。 优选地,第一掺杂剂浓度比第二浓度至少高一个数量级,更优选地至少比两个数量级更大。 当第一p-n结被反向偏置时,耗尽区(17)基本上只存在于第二层内,并且改变反偏压的大小偏移获得最大光谱灵敏度或响应性的波长。 提供至少一个电触点用于将第二层耦合到可变偏置电压的源极(32),用于反向偏置p-n结。 随着偏置电压的大小改变,因此光电检测器响应的电磁辐射的波长被改变。 交流信号可以叠加在反向DC偏置电压上,并且可以使用同步检测技术来检测对应于某些带隙能量的光子。
    • 6. 发明授权
    • Photodiode having voltage tunable spectral response
    • 具有电压可调光谱响应的光电二极管
    • US07217982B2
    • 2007-05-15
    • US10962301
    • 2004-10-08
    • Scott M. TaylorKenneth KosaiJames A. Finch
    • Scott M. TaylorKenneth KosaiJames A. Finch
    • H01L29/72
    • H01L31/1032H01L27/14618H01L27/14683H01L31/02966H01L31/101H01L31/1035H01L2924/0002H01L2924/00
    • A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of electrical conductivity; and a second layer (16) of semiconductor material overlying the first layer. The second layer contains a second dopant at a second concentration for having a second type of electrical conductivity and forms a first p-n junction (15) with the first layer. The second layer is compositionally graded through at least a portion of a thickness thereof from wider bandgap semiconductor material to narrower bandgap in a direction away from the p-n junction. The compositional grading can be done in a substantially linear fashion, or in a substantially non-linear fashion, e.g., in a stepped manner. Preferably the first dopant concentration is at least an order of magnitude greater than the second concentration, and more preferably is at least two orders of magnitude greater. When the first p-n junction is reverse biased, a depletion region (17) exists substantially only within the second layer, and varying the magnitude of the reverse bias shifts the wavelength at which a maximum spectral sensitivity or responsiveness is obtained. At least one electrical contact is provided for coupling the second layer to a source (32) of variable bias voltage for reverse biasing the p-n junction. As the magnitude of the bias voltage is changed a wavelength of electromagnetic radiation to which the photodetector is responsive is thus changed. An alternating current signal can be superimposed on the reverse DC bias voltage and a synchronous detection technique used to detect photons corresponding to a certain bandgap energy.
    • 光电检测器(10)包括具有表面的基板(12) 设置在所述表面上方的半导体材料的第一层(14),所述第一层含有第一浓度的第一掺杂剂以具有第一类型的导电性; 以及覆盖在第一层上的半导体材料的第二层(16)。 第二层含有第二浓度的第二掺杂剂,用于具有第二类型的导电性,并与第一层形成第一p-n结(15)。 第二层通过其厚度的至少一部分从宽带隙半导体材料成组分分级到在远离p-n结的方向上窄带宽。 组成分级可以以基本上线性的方式进行,或者以基本上非线性的方式,例如以阶梯式方式进行。 优选地,第一掺杂剂浓度比第二浓度至少高一个数量级,更优选地至少比两个数量级更大。 当第一p-n结被反向偏置时,耗尽区(17)基本上只存在于第二层内,并且改变反偏压的大小偏移获得最大光谱灵敏度或响应性的波长。 提供至少一个电触点用于将第二层耦合到可变偏置电压的源极(32),用于反向偏置p-n结。 随着偏置电压的大小改变,因此光电检测器响应的电磁辐射的波长被改变。 交流信号可以叠加在反向DC偏置电压上,并且可以使用同步检测技术来检测对应于某些带隙能量的光子。
    • 7. 发明授权
    • IRFPA ROIC with dual TDM reset integrators and sub-frame averaging functions per unit cell
    • 具有双TDM复位积分器的IRFPA ROIC和每个单元的子帧平均功能
    • US06885002B1
    • 2005-04-26
    • US09945518
    • 2001-08-31
    • James A. FinchRoger W. GrahamStephen H. BlackJerry A. WilsonRichard H. Wyles
    • James A. FinchRoger W. GrahamStephen H. BlackJerry A. WilsonRichard H. Wyles
    • H01L20060101H01L25/00H01L27/146H01L31/00H04N5/33
    • H04N5/3594H01L27/14652H01L2924/0002H04N5/33H04N5/332H04N2209/047H01L2924/00
    • A unit cell (10) of a readout integrated circuit is constructed and operated so as to temporally align an image obtained in a first spectral band with a an image obtained in a second spectral band. A method operates, during a frame period, to sub-frame average a first signal detected in the first spectral band by a multi-spectral detector (12), to sub-frame average a first signal detected in the second spectral band by the multi-spectral detector, and to sub-frame average a second signal detected in the first spectral band by the multi-spectral detector. The method then reads out the sub-frame averaged signals for each spectral band. The sub-frame averaged may be read out simultaneously from the unit cell. When sub-frame averaging the first and second signals in the first spectral band the method performs a plurality of consecutive sub-integrations and stores the result of each sub-integration on a first sub-frame averaging capacitance, and when sub-frame averaging the first signal of the second spectral band the method performs a single integration of the second signal, and stores the result of the integration on a second sub-frame averaging capacitance. The first spectral band may correspond to long wavelength infrared radiation (LWIR), and the second spectral band may correspond to medium wavelength infrared radiation (MWIR).
    • 读出集成电路的单位单元(10)被构造和操作,以使得在第一频谱带中获得的图像与在第二频谱带中获得的图像在时间上对准。 一种方法在帧周期期间,通过多光谱检测器(12)对在第一光谱带中检测到的第一信号进行子帧平均化,以将第二光谱带中检测到的第一信号平均化为多 光谱检测器,并且通过多光谱检测器对在第一光谱带中检测到的第二信号进行子帧平均化。 该方法然后读出每个频谱带的子帧平均信号。 可以从单位单元同时读出平均的子帧。 当子帧对第一频谱带中的第一和第二信号进行平均时,该方法执行多个连续子积分,并将每个子积分的结果存储在第一子帧平均电容上,并且当子帧对 第二频谱带的第一信号,该方法执行第二信号的单次积分,并将积分的结果存储在第二子帧平均电容上。 第一光谱带可以对应于长波长红外辐射(LWIR),第二光谱带可以对应于中波长红外辐射(MWIR)。