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    • 1. 发明授权
    • Overcurrent detection circuit for a power MOSFET and method therefor
    • 功率MOSFET过电流检测电路及其方法
    • US5675268A
    • 1997-10-07
    • US538522
    • 1995-10-03
    • Thomas D. PettyTroy L. StockstadWarren J. Schultz
    • Thomas D. PettyTroy L. StockstadWarren J. Schultz
    • H03K17/082H03K5/153H03K5/22
    • H03K17/0822
    • An overcurrent detector circuit (21) for a power MOSFET (22) is described. The overcurrent detector circuit (21) generates a bias voltage corresponding to the drain to source voltage of the power MOSFET (22). The drain to source voltage correlates directly to the current being conducted by the power MOSFET (22). An overcurrent condition occurs when the power MOSFET (22) exceeds a predetermined current. The bias voltage is applied to a transistor (24) for generating a current. A current source (29) couples to the transistor (24). The current provided by the transistor equals the reference current of the current source (29) when the power MOSFET conducts the predetermined current. The overcurrent detector circuit (21) generates a signal indicating a overcurrent condition does not exist when the reference current is greater the current provided by the transistor. Conversely, the overcurrent detector circuit (21) generates a signal indicating the overcurrent condition when the current provided by the transistor exceeds the reference current.
    • 描述了用于功率MOSFET(22)的过电流检测器电路(21)。 过电流检测器电路(21)产生对应于功率MOSFET(22)的漏极 - 源极电压的偏置电压。 漏极到源极电压直接与由功率MOSFET(22)传导的电流相关。 当功率MOSFET(22)超过预定电流时,发生过电流状况。 偏置电压被施加到用于产生电流的晶体管(24)。 电流源(29)耦合到晶体管(24)。 当功率MOSFET导通预定电流时,由晶体管提供的电流等于电流源(29)的参考电流。 过电流检测器电路(21)产生指示当晶体管提供的电流的参考电流大时,过电流状态不存在的信号。 相反,当由晶体管提供的电流超过参考电流时,过电流检测器电路(21)产生指示过电流状况的信号。
    • 2. 发明授权
    • Semiconductor device having a large sense voltage
    • 具有大的感测电压的半导体器件
    • US5563437A
    • 1996-10-08
    • US839413
    • 1992-02-21
    • Robert B. DaviesWarren J. Schultz
    • Robert B. DaviesWarren J. Schultz
    • H01L27/02H01L29/06H01L29/78H03F3/343H01L29/76H01L21/265
    • H01L29/7815H01L27/0248H01L29/0696
    • A large sense voltage is produced by the semiconductor device of the present invention. The semiconductor device, utilizing current mirror techniques, is comprised of a power MOSFET having a plurality of power cells and a plurality of sense cells formed in a semiconductor epitaxial layer. The large sense voltage is provided by isolating and separating the plurality of power cells from the plurality of sense cells by at least the thickness of the semiconductor epitaxial layer. Isolation can be provided by forming a plurality of inactive cells or an elongated cell between the plurality of power cells and the plurality of sense cells. In addition, high voltage capabilities can be maintained by including a partially active region adjacent the power cells to provide for good termination.
    • 通过本发明的半导体器件产生大的感测电压。 利用电流镜技术的半导体器件由具有多个功率单元的功率MOSFET和形成在半导体外延层中的多个感测单元组成。 通过将多个功率单元与多个感测单元隔离并分离至少半导体外延层的厚度来提供大的感测电压。 可以通过在多个功率单元和多个感测单元之间形成多个非活性单元或细长单元来提供隔离。 此外,通过包括邻近功率单元的部分有效区域以提供良好的终止,可以维持高电压能力。
    • 4. 发明授权
    • Pulsed pressure sensor circuit and method therefor
    • 脉冲压力传感器电路及其方法
    • US5351549A
    • 1994-10-04
    • US954996
    • 1992-10-01
    • Jeffrey BaumWarren J. Schultz
    • Jeffrey BaumWarren J. Schultz
    • G01L9/02G01L9/00G01L9/06G01L9/04
    • G01L9/06
    • A pulsed pressure sensor circuit (11) with increased sensitivity for measuring low pressures. A pulse generation circuit (12) is enabled by a microprocessor (28) to output a voltage pulse. The voltage pulse biases a pressure sensor (17) which has a port exposed to a pressure to be sensed. The pressure sensor (17) outputs a differential voltage which is proportional to the pressure at the port. The differential voltage is amplified by an amplifier (23) which has an output coupled to the microprocessor (28). A voltage divider circuit (26) is coupled to the pulse generation circuit (12) and has an output coupled to the microprocessor (28). The microprocessor (28) samples the voltages at the output of the amplifier (23) and the output of the voltage divider circuit (26). Microprocessor (28) then calculates the pressure using the sampled voltages and data stored in memory.
    • 脉冲压力传感器电路(11)具有增加的测量低压的灵敏度。 脉冲发生电路(12)由微处理器(28)启动以输出电压脉冲。 电压脉冲偏置压力传感器(17),其具有暴露于要感测的压力的端口。 压力传感器(17)输出与端口压力成比例的差分电压。 差分电压由具有耦合到微处理器(28)的输出的放大器(23)放大。 分压器电路(26)耦合到脉冲发生电路(12)并且具有耦合到微处理器(28)的输出。 微处理器(28)对放大器(23)的输出端和分压器电路(26)的输出端的电压进行采样。 微处理器(28)然后使用存储在存储器中的采样电压和数据来计算压力。
    • 7. 发明授权
    • Amplifier drive circuit for inductive loads
    • 用于感性负载的放大器驱动电路
    • US4897580A
    • 1990-01-30
    • US369413
    • 1989-06-20
    • Warren J. Schultz
    • Warren J. Schultz
    • H04N3/16H03K4/64H03K17/60H03K17/61H04N3/18
    • H03K4/64H03K17/601
    • A transformer coupled amplifier drive circuit (60) and method especially suited for providing a saw-tooth current waveform to an inductive load (32) for horizontal deflection applications in CRT monitors and the like are described. The transformer primary (48) is coupled between the power source connection (11) and the input of the amplifier (26) while the transformer secondary (50) has an opposite polarity terminal coupled to the input of the amplifier (26) through an inductor (52) and the other terminal of the secondary (50) coupled to the common terminal (15) of the amplifier (26) through a diode (56).When the input switch (44) is closed, the input of the amplifier (26) is energized by a current (65) through the series connected primary (48) and energy is stored in the transformer magnetizing field and in the amplifier (26). Conduction in the transformer secondary (50) is blocked by the diode (56).When the input switch (44) is opened, the input charging current (65) stops and the collapsing primary magnetizing field produces an oppositely directed current (67) which flows through the secondary winding (50), the diode (56), the series connected inductor (52) and the input to the amplifier (26). The demagnetization energy stored in the transformer (48) cancels the energy stored in the amplifier (26), thereby reducing total dissipation, and the inductor (52) controls the fall time independent of the rise time.
    • 8. 发明授权
    • Electronic fuse for semiconductor devices
    • 电子熔断器用于半导体器件
    • US4562454A
    • 1985-12-31
    • US566766
    • 1983-12-29
    • Warren J. SchultzHerbert A. Saladin
    • Warren J. SchultzHerbert A. Saladin
    • H01L27/02H02H9/00
    • H01L27/0248
    • A semiconductor fuse is disclosed that provides protection against both overcurrent and the abrupt application of a voltage to semiconductor devices. A first means is coupled to an input terminal for providing a signal when a current is applied to the input terminal. A second means is coupled between the input terminal and an output terminal for allowing current to pass therebetween and is coupled to the detecting means and responsive to the signal. A third means is coupled between the output terminal and a ground terminal for shorting a current therebetween. A fourth means is coupled to the input terminal, the second means, and the third means for activating the third means and preventing the second means from responding to the signal when the input current exceeds a predetermined value.
    • 公开了一种半导体保险丝,其提供防止过电流和突然施加电压到半导体器件的保护。 第一装置耦合到输入端,用于当电流施加到输入端时提供信号。 第二装置耦合在输入端子和输出端子之间,用于允许电流在其间通过,并且耦合到检测装置并响应信号。 第三装置连接在输出端子和接地端子之间,用于短路电流。 第四装置耦合到输入端子,第二装置和用于激活第三装置的第三装置,并且当输入电流超过预定值时防止第二装置响应信号。