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1. 发明授权

US07927571B2 Method and device for producing high purity polycrystalline silicon with a reduced dopant content 有权
标题翻译：用于生产具有降低的掺杂剂含量的高纯度多晶硅的方法和装置
公开(公告)号：US07927571B2
公开(公告)日：2011-04-19
申请号：US11834135
申请日：2007-08-06
申请人： Thomas Altmann , Hans Peter Sendlinger , Ivo Croessmann
发明人： Thomas Altmann , Hans Peter Sendlinger , Ivo Croessmann
IPC分类号： C01B33/035 , H01L21/322 , C30B25/00 , C30B35/00
CPC分类号： C01B33/029 , C01B33/03 , C01B33/035
摘要： In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body with deposited silicon, until at least the time when the reactor is closed in order to deposit silicon on the second carrier body.
摘要翻译：在批量生产高纯度多晶硅的过程中，U型硅载体主体紧固在开放式沉积反应器中，沉积反应器被气密密封，U形载体主体被加热电流，含硅反应气体和氢气通过供应管线被引入反应器中，使得来自反应气体的硅沉积在载体上，载体主体的直径增加，并且形成的废气通过排出管线从沉积反应器中除去，在达到多晶硅棒的期望直径之后，终止沉积，将载体主体冷却至室温，反应器打开，载体从反应器中取出，第二U形硅载体由硅制成被固定在沉积反应器中，惰性气体至少从反应器打开到外部的时候通过供给和排出管线进入开放式反应器将具有沉积硅的第一载体体直到至少反应器关闭的时间以将硅沉积在第二载体上。

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