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1. 发明授权

US06942728B2 High performance p-type thermoelectric materials and methods of preparation 有权
标题翻译：高性能p型热电材料及其制备方法
公开(公告)号：US06942728B2
公开(公告)日：2005-09-13
申请号：US10262807
申请日：2002-10-01
申请人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
发明人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
IPC分类号： C22C1/04 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/18 , H01L35/34 , C30B29/48
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , C22C1/0491 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/34 , B22F1/0085 , B22F9/04 , B22F3/14
摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
摘要翻译：本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。在本发明的一个方面，式Zn 4-x A x Sb 3-y B y y的p型半导体，其中0 <= x <= 4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3，用于制造具有显着增强的操作特性和提高效率的热电器件。制备本发明的p型Zn 4 Sb 3 O 3和相关合金的两种方法包括晶体生长法和粉末冶金法。

2. 发明授权

US06563039B2 Thermoelectric unicouple used for power generation 有权
公开(公告)号：US06563039B2
公开(公告)日：2003-05-13
申请号：US09765062
申请日：2001-01-17
申请人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
发明人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
IPC分类号： H01L3528
CPC分类号： H01L35/04 , H01L35/18 , H01L35/32
摘要： A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.

3. 发明授权

US06288321B1 Electronic device featuring thermoelectric power generation 失效
标题翻译：具有热电发电的电子装置
公开(公告)号：US06288321B1
公开(公告)日：2001-09-11
申请号：US09014211
申请日：1998-01-26
申请人： Jean-Pierre Fleurial , N. Thomas Olson , Alexander Borshchevsky , Thierry Caillat , Elizabeth Kolawa , M. Amy Ryan , Wayne M. Philips
发明人： Jean-Pierre Fleurial , N. Thomas Olson , Alexander Borshchevsky , Thierry Caillat , Elizabeth Kolawa , M. Amy Ryan , Wayne M. Philips
IPC分类号： H01L3530
CPC分类号： H01L35/16 , H01L35/30 , H01L35/32
摘要： A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a Bi2Te3-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
摘要翻译：一种用于产生运行电子部件的电力的装置。该装置包括与高温区域热接触设置的导热基板（例如由金刚石或另一高导热材料构成）。在运行期间，热量从高温区域流入导热基板，热量流入发电机。将热电材料（例如，Bi 2 Te 3基膜或其它热电材料）放置成与导热基板热接触。低温区域位于热电材料的与高温区域相反的一侧。热梯度产生电力并驱动电气部件。

4. 发明授权

US5831286A High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices 失效
标题翻译：高迁移率p型过渡金属三锑化物和相关方钴矿化合物和用于功率半导体器件的合金
公开(公告)号：US5831286A
公开(公告)日：1998-11-03
申请号：US643914
申请日：1996-05-07
申请人： Jean-Pierre Fleurial , Thierry Caillat , Alexander Borshchevsky , Jan W. Vandersande
发明人： Jean-Pierre Fleurial , Thierry Caillat , Alexander Borshchevsky , Jan W. Vandersande
IPC分类号： H01L29/24 , H01L31/0256
CPC分类号： H01L29/24
摘要： Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.
摘要翻译：已经制备了第Ⅷ族（Co，Rh和Ir）的金属过渡金属（Co，Rh和Ir），其具有通式为Sb TX with with with with with with with with with with with with with with with with with with with with or or or or or 这些半导体合金的方钴矿型晶格结构及其增强的半导体特性产生可用于制造功率半导体器件的半导体材料，以显着提高所得半导体器件的效率。具有期望的方钴矿型晶格结构的半导体合金可以通过使用垂直梯度冷冻技术，液相 - 固相烧结技术，低温粉末烧结和/或热压法，根据本发明制备。

5. 发明授权

US06458319B1 High performance P-type thermoelectric materials and methods of preparation 失效
标题翻译：高性能P型热电材料及其制备方法
公开(公告)号：US06458319B1
公开(公告)日：2002-10-01
申请号：US08820019
申请日：1997-03-18
申请人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
发明人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
IPC分类号： C30B2910
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , C22C1/0491 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/34 , B22F1/0085 , B22F9/04 , B22F3/14
摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
摘要翻译：本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。在本发明的一个方面，式Zn4-xAxSb3-yBy的p型半导体，其中0≤x≤4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3 在制造具有显着提高的操作特性和提高的效率的热电器件中。制备本发明的p型Zn4Sb3和相关合金的两种方法包括晶体生长法和粉末冶金法。

6. 发明授权

US5610366A High performance thermoelectric materials and methods of preparation 失效
标题翻译：高性能热电材料及其制备方法
公开(公告)号：US5610366A
公开(公告)日：1997-03-11
申请号：US189087
申请日：1994-01-28
申请人： Jean-Pierre Fleurial , Thierry F. Caillat , Alexander Borshchevsky
发明人： Jean-Pierre Fleurial , Thierry F. Caillat , Alexander Borshchevsky
IPC分类号： C22C19/07 , H01L35/14 , H01L35/18 , H01L35/22 , H01L35/32 , H01L35/34
CPC分类号： H01L35/22 , H01L35/18 , H01L35/32 , Y10S257/93
摘要： Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.
摘要翻译：已经制备了第VIII族（Co，Rh和Ir）的过渡金属（T）作为具有通式为TSb3的Sb的半导体合金。这些半导体合金的方钴矿型晶格结构及其增强的热电性能导致可用于制造热电元件的半导体材料，以显着提高所得热电装置的效率。具有期望的方钴矿型晶格结构的半导体合金可以通过使用垂直梯度冷冻技术，液相 - 固相烧结技术，低温粉末烧结和/或热压法，根据本发明制备。根据本发明制备的所选择的半导体材料的电和热传输性能的测量表明，高的霍尔迁移率（高达8000cm2.V-1.s-1），良好的塞贝克系数（高达400μVK-1之间 300℃，700℃），导热系数低（15mW / cmK）。优化从元素混合物Co，Rh，Ir和Sb制备的半导体材料的传输性能导致在这种半导体材料制造的热电元件的温度高达400℃时，热电性能（ZT）增加了两倍。

7. 发明授权

US5747728A Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation 失效
标题翻译：先进的热电材料具有增强的晶格结构和制备方法
公开(公告)号：US5747728A
公开(公告)日：1998-05-05
申请号：US412700
申请日：1995-03-29
申请人： Jean-Pierre Fleurial , Thierry F. Caillat , Alexander Borshchevsky
发明人： Jean-Pierre Fleurial , Thierry F. Caillat , Alexander Borshchevsky
IPC分类号： C22C19/07 , H01L35/14 , H01L35/18 , H01L35/22 , H01L35/32 , H01L35/34
CPC分类号： H01L35/22 , H01L35/18 , H01L35/32 , Y10S257/93
摘要： New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.
摘要翻译：已经制备了包括Ru0.5Pd0.5Sb3，RuSb2Te和FeSb2Te的新的方钴矿相，具有期望的热电性质。此外，已经使用方钴矿相Fe0.5Ni0.5Sb3制备了一种新型的热电装置。这些半导体化合物的方钴矿型晶格结构及其增强的热电性能导致可用于制造热电元件的半导体材料，以显着提高所得热电装置的效率。具有期望的方钴矿型晶格结构的半导体材料可以通过使用粉末冶金技术根据本发明制备。根据本发明制备的所选半导体材料的电和热传输性能的测量表明，霍尔迁移率高，塞贝克系数好。这些材料具有低导热性和相对低的电阻率，并且是低温热电应用的良好候选者。

8. 发明授权

US07098393B2 Thermoelectric device with multiple, nanometer scale, elements 失效
公开(公告)号：US07098393B2
公开(公告)日：2006-08-29
申请号：US10150772
申请日：2002-05-17
申请人： Jean-Pierre Fleurial , Margaret A. Ryan , Alexander Borshchevsky , Jennifer Herman
发明人： Jean-Pierre Fleurial , Margaret A. Ryan , Alexander Borshchevsky , Jennifer Herman
IPC分类号： H01L35/16 , H01L35/18 , H01L35/14
CPC分类号： H01L35/32
摘要： A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.

9. 发明授权

US5769943A Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques 失效
标题翻译：采用梯度冷冻和液固技术的半导体装置
公开(公告)号：US5769943A
公开(公告)日：1998-06-23
申请号：US101901
申请日：1993-08-03
申请人： Jean-Pierre Fleurial , Thierry F. Caillat , Alexander Borshchevsky
发明人： Jean-Pierre Fleurial , Thierry F. Caillat , Alexander Borshchevsky
IPC分类号： H01L35/18 , H01L35/22 , H01L35/32 , C30B35/00
CPC分类号： H01L35/18 , H01L35/22 , H01L35/32 , Y10S117/914 , Y10T117/1076 , Y10T117/1096
摘要： Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.
摘要翻译：已经制备了第VIII族（Co，Rh和Ir）的过渡金属，作为具有通式TSb3的半导体化合物。这些半导体化合物的方钴矿型晶格结构及其增强的热电性能导致可用于制造热电元件的半导体材料，以显着提高所得热电装置的效率。具有所需方钴矿型晶格结构的半导体材料可以通过使用垂直梯度冷冻技术和/或液相烧结技术根据本发明制备。根据本发明制备的选择的半导体材料的电和热传输性能的测量表明，霍尔迁移率高（高达1200cm2.V-1.s-1）和良好的塞贝克系数（高达150μVK-1之间 300℃，700℃）。从元素混合物Co，Rh，Ir和Sb制备的半导体材料的传输性能优化导致在由这种半导体材料制造的热电元件的高达400℃的温度下，热电性能（ZT）显着增加。

10. 发明授权

US4465545A Method of growing single crystal cadmium telluride 失效
标题翻译：生长单晶碲化镉的方法
公开(公告)号：US4465545A
公开(公告)日：1984-08-14
申请号：US403554
申请日：1982-07-30
申请人： Robert S. Feigelson , Alexander Borshchevsky
发明人： Robert S. Feigelson , Alexander Borshchevsky
IPC分类号： C30B11/00 , C30B7/06
CPC分类号： C30B11/00 , C30B29/48
摘要： The crystalline structure of cadmium telluride grown in a Bridgman process is enhanced by applying vibrations at a frequency less than 1000 hertz at a low amplitude whereby the cadmium telluride has vibrations with a displacement of less than one-tenth millimeter.
摘要翻译：在Bridgman工艺中生长的碲化镉的晶体结构通过以低振幅以小于1000赫兹的频率施加振动来增强，由此碲化镉具有位移小于十分之一毫米的振动。

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