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1. 外观设计

USD725613S1 LED package 有权
公开(公告)号：USD725613S1
公开(公告)日：2015-03-31
申请号：US29424861
申请日：2012-06-15
申请人： Theodore Lowes , Eric J. Tarsa , Sten Heikman , Bernd Keller , John A. Edmond , Jesse Reiherzer , Hormoz Benjamin
设计人： Theodore Lowes , Eric J. Tarsa , Sten Heikman , Bernd Keller , John A. Edmond , Jesse Reiherzer , Hormoz Benjamin

2. 外观设计

USD718258S1 LED package 有权
公开(公告)号：USD718258S1
公开(公告)日：2014-11-25
申请号：US29431064
申请日：2012-09-02
申请人： Theodore Lowes , Eric J. Tarsa , Sten Heikman , Bernd Keller , John A. Edmond , Jesse Reiherzer , Hormoz Benjamin , Christopher P. Hussell
设计人： Theodore Lowes , Eric J. Tarsa , Sten Heikman , Bernd Keller , John A. Edmond , Jesse Reiherzer , Hormoz Benjamin , Christopher P. Hussell

3. 外观设计

USD711840S1 LED package 有权
标题翻译： LED封装
公开(公告)号：USD711840S1
公开(公告)日：2014-08-26
申请号：US29424353
申请日：2012-06-11
申请人： Theodore Lowes , Eric J. Tarsa , Sten Heikman , Bernd Keller , John A. Edmond , Jesse Reiherzer , Hormoz Benjamin
设计人： Theodore Lowes , Eric J. Tarsa , Sten Heikman , Bernd Keller , John A. Edmond , Jesse Reiherzer , Hormoz Benjamin

4. 发明申请

US20100283077A1 LIGHT EMITTING DIODES INCLUDING OPTICALLY MATCHED SUBSTRATES 有权
标题翻译：发光二极管，包括光学匹配的基板
公开(公告)号：US20100283077A1
公开(公告)日：2010-11-11
申请号：US12835366
申请日：2010-07-13
申请人： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/46 , H01L33/62
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
摘要翻译：发光二极管包括包含氮化镓基n型层，有源区和氮化镓基p型层的二极管区。在氮化镓基n型层上提供衬底，并与二极管区域光学匹配。衬底具有远离氮化镓基n型层的第一面，与氮化镓基n型层相邻的第二面和其间的侧壁。侧壁的至少一部分是斜面的，以便倾斜地延伸到第一和第二面。可以在与衬底相对的氮化镓基p型层上设置反射器。此外，二极管区域可以比衬底的第二面宽，并且可以包括从第一面远离第一面和第二面的台面。

5. 发明授权

US08426881B2 Light emitting diodes including two reflector layers 有权
标题翻译：发光二极管包括两个反射层
公开(公告)号：US08426881B2
公开(公告)日：2013-04-23
申请号：US12360216
申请日：2009-01-27
申请人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
摘要翻译：发光二极管包括具有氮化镓基n型层，有源区和氮化镓基p型层的二极管区。在氮化镓基p型层上设置第一反射层，在氮化镓系n型层上设置第二反射层。还可以提供接合层，安装支架，引线接合和/或透明氧化物层。

6. 发明申请

US20080173884A1 Wafer level phosphor coating method and devices fabricated utilizing method 有权
公开(公告)号：US20080173884A1
公开(公告)日：2008-07-24
申请号：US11656759
申请日：2007-01-22
申请人： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L23/3114 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/507 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

7. 发明授权

US07084436B2 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US07084436B2
公开(公告)日：2006-08-01
申请号：US10815426
申请日：2004-03-31
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发出绿色，蓝色，红色光和UV光，其组合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

8. 发明授权

US08563339B2 System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices 有权
标题翻译：半导体器件上荧光材料闭环电泳沉积的系统和方法
公开(公告)号：US08563339B2
公开(公告)日：2013-10-22
申请号：US11473089
申请日：2006-06-21
申请人： Eric J. Tarsa , Michael Leung , Bernd Keller , Robert Underwood , Mark Youmans
发明人： Eric J. Tarsa , Michael Leung , Bernd Keller , Robert Underwood , Mark Youmans
IPC分类号： H01L21/00 , H01L21/326 , H01L21/479 , H01L21/20 , H01L21/36 , H01L21/31 , H01L21/469
CPC分类号： C25D13/12 , C25D5/003 , C25D7/123 , C25D13/02 , C25D13/22 , C25D15/00 , C25D17/02 , C25D21/00 , H01L2933/0041
摘要： One close loop system and method for electrophoretic deposition (EPD) of phosphor material on light emitting diodes (LEDs). The system comprises a deposition chamber sealed from ambient air. A mixture of phosphor material and solution is provided to the chamber with the mixture also being sealed from ambient air. A carrier holds a batch of LEDs in the chamber with the mixture contacting the areas of the LEDs for phosphor deposition. A voltage supply applies a voltage to the LEDs and the mixture to cause the phosphor material to deposit on the LEDs at the mixture contacting areas.
摘要翻译：一种用于发光二极管（LED）上的磷光体材料的电泳沉积（EPD）的闭环系统和方法。该系统包括由环境空气密封的沉积室。将荧光体材料和溶液的混合物提供到室，混合物也与环境空气密封。载体在室中保持一批LED，其中混合物与LED的区域接触以进行磷光体沉积。电压源向LED和混合物施加电压，以使荧光体材料沉积在混合物接触区域的LED上。

9. 发明授权

US07202506B1 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US07202506B1
公开(公告)日：2007-04-10
申请号：US09528262
申请日：2000-03-17
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发射绿色，蓝色，红色光和UV光，其组合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

10. 发明授权

US08035117B2 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US08035117B2
公开(公告)日：2011-10-11
申请号：US11484233
申请日：2006-07-10
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色，蓝色和紫外光的有源层，使得LED发射绿色，蓝色，红色和紫外光，结合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个有源层发射紫外光的固态激光器，其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。

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