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    • 4. 发明申请
    • HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS, LOGIC DEVICES AND ARRAYS
    • 混合等离子体半导体晶体管,逻辑器件和阵列
    • US20140339677A1
    • 2014-11-20
    • US14452032
    • 2014-08-05
    • THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    • J. Gary EdenPaul A. TchertchianClark J. WagnerDane J. SieversThomas J. HoulahanBenben Li
    • H01L29/73H01L29/66
    • H01J17/36H01J17/066H01J17/49H01J17/497H01L29/66234H01L29/73H01L33/02
    • A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.
    • 复合等离子体半导体器件具有薄且柔性的半导体基底层。 发射极区域扩散到形成pn结的基极层中。 绝缘体层位于基极层和发射极区域的一侧。 基极和发射极通过绝缘体层彼此隔离,并通过绝缘体层与基极层和发射极区域电接触。 薄且柔性的集电极层位于基层的相对侧。 在集电极层中形成微腔并与发射极区对准。 集电极被布置为通过向集电极施加电压来维持微腔内的微量。 将发射极区域的深度和基极层的厚度设定为将基底层的预定薄部分定义为发射极区域和微腔体之间的基极区域。 在微腔中产生的微血管作为收集器。 逻辑器件设置在形成为薄且柔性或不柔性半导体材料的多个子集电极和子发射体微质体器件中。
    • 6. 发明授权
    • Hybrid plasma-semiconductor transistors, logic devices and arrays
    • 混合等离子体半导体晶体管,逻辑器件和阵列
    • US09263558B2
    • 2016-02-16
    • US14452032
    • 2014-08-05
    • The Board of Trustees of the University of Illinois
    • J. Gary EdenPaul A. TchertchianClark J. WagnerDane J. SieversThomas J. HoulahanBenben Li
    • H01L29/66H01L29/73H01J17/06H01J17/49H01L33/02
    • H01J17/36H01J17/066H01J17/49H01J17/497H01L29/66234H01L29/73H01L33/02
    • A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.
    • 复合等离子体半导体器件具有薄且柔性的半导体基底层。 发射极区域扩散到形成pn结的基极层中。 绝缘体层位于基极层和发射极区域的一侧。 基极和发射极通过绝缘体层彼此隔离,并通过绝缘体层与基极层和发射极区域电接触。 薄且柔性的集电极层位于基层的相对侧。 在集电极层中形成微腔并与发射极区对准。 集电极被布置为通过向集电极施加电压来维持微腔内的微量。 将发射极区域的深度和基极层的厚度设定为将基底层的预定薄部分定义为发射极区域和微腔体之间的基极区域。 在微腔中产生的微血管作为收集器。 逻辑器件设置在形成为薄且柔性或不柔性半导体材料的多个子集电极和子发射体微质体器件中。