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1. 发明申请

US20140329378A1 GATE ELECTRODE WITH DEPLETION SUPPRESSION AND TUNABLE WORKFUNCTION 有权
标题翻译：门电极具有抑制抑制和可调节功能
公开(公告)号：US20140329378A1
公开(公告)日：2014-11-06
申请号：US14286529
申请日：2014-05-23
申请人： The Board of Trustees of the Leland Stanford Junior University
发明人： Steven Hung , Judy L. Hoyt , James F. Gibbons
IPC分类号： H01L21/28
CPC分类号： H01L21/823828 , H01L21/2807 , H01L21/28079 , H01L21/28088 , H01L21/28562 , H01L21/823842 , H01L29/1054 , H01L29/49 , H01L29/4958
摘要： Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices. The ability to reduce gate depletion effects also provides enhanced device current drive.
摘要翻译：通过具有可调谐的有效功函数和减少的栅极耗尽效应的栅极结构来提高半导体器件的性能。根据示例性实施例，半导体器件的设计阈值电压被调整为包括提供具有能够使半导体器件处于选定电压的功能的功能门的方式。栅极形成为具有不同电功能的两种不同的导电材料，这两种导电材料都显着地有助于栅极的整体功能。选择两种导电材料中的每一种的相对组成，厚度和布置，以获得不同于两层中的每一层的功函数的栅电极功函数，并设定半导体器件的阈值电压。栅电极的有效功函数的可调性可应用于各种半导体器件。降低栅极耗尽效应的能力还提供增强的器件电流驱动。

2. 发明授权

US09269633B2 Method for forming gate electrode with depletion suppression and tunable workfunction 有权
标题翻译：用于形成具有耗尽抑制和可调功函数的栅电极的方法
公开(公告)号：US09269633B2
公开(公告)日：2016-02-23
申请号：US14286529
申请日：2014-05-23
申请人： The Board of Trustees of the Leland Stanford Junior University
发明人： Steven Hung , Judy L. Hoyt , James F. Gibbons
IPC分类号： H01L21/44 , H01L21/8238 , H01L21/28 , H01L21/285 , H01L29/49 , H01L29/10
CPC分类号： H01L21/823828 , H01L21/2807 , H01L21/28079 , H01L21/28088 , H01L21/28562 , H01L21/823842 , H01L29/1054 , H01L29/49 , H01L29/4958
摘要： Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices. The ability to reduce gate depletion effects also provides enhanced device current drive.
摘要翻译：通过具有可调谐的有效功函数和减少的栅极耗尽效应的栅极结构来提高半导体器件的性能。根据示例性实施例，半导体器件的设计阈值电压被调整为包括提供具有能够使半导体器件处于选定电压的功能的功能门的方式。栅极形成为具有不同电功能的两种不同的导电材料，这两种导电材料都显着地有助于栅极的整体功能。选择两种导电材料中的每一种的相对组成，厚度和布置，以获得不同于两层中的每一层的功函数的栅电极功函数，并设定半导体器件的阈值电压。栅电极的有效功函数的可调性可应用于各种半导体器件。降低栅极耗尽效应的能力还提供增强的器件电流驱动。

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