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1. 发明申请

US20130032480A1 GAS SENSOR 有权
标题翻译：气体传感器
公开(公告)号：US20130032480A1
公开(公告)日：2013-02-07
申请号：US13565040
申请日：2012-08-02
申请人： Tetsuya ITO , Satoshi TERAMOTO , Kentaro MORI
发明人： Tetsuya ITO , Satoshi TERAMOTO , Kentaro MORI
IPC分类号： G01N27/409
CPC分类号： G01N27/406 , G01N27/4062 , G01N27/407 , G01N27/409 , G01N27/41 , G01N27/419
摘要： A gas sensor (100) includes an oxygen pump cell (135) and an oxygen-concentration detection cell (150) laminated together with a spacer (145) interposed therebetween. The spacer (145) has a gas detection chamber (145c) which faces electrodes (137, 152) of the cells (135, 150). The oxygen-concentration detection cell (150) produces an output voltage corresponding to the concentration of oxygen in the gas detection chamber (145c). The oxygen pump cell (135) pumps oxygen into and out of the measurement chamber (145c) such that the output voltage of the oxygen-concentration detection cell (150) becomes equal to a predetermined target voltage. A leakage portion mainly formed of zirconia is disposed between which electrically connects the oxygen-concentration detection cell (150) and the oxygen pump cell (135).
摘要翻译：气体传感器（100）包括氧隔膜（135）和与间隔件（145）一起夹在其间的氧浓度检测单元（150）。间隔物（145）具有与电池（135,150）的电极（137,152）相对的气体检测室（145c）。氧浓度检测单元（150）产生与气体检测室（145c）中的氧浓度对应的输出电压。氧气泵电池（135）将氧气输入和输出测量室（145c），使得氧浓度检测单元（150）的输出电压等于预定的目标电压。主要由氧化锆形成的泄漏部分设置在它们之间，电气连接氧浓度检测单元（150）和氧气泵单元（135）。

2. 发明申请

US20090109901A1 WIRELESS DEVICE WHICH SELECTS ROUTES EXCLUDING LOOP ROUTES AND A MESH NETWORK INCLUDING THE SAME 有权
标题翻译：无线设备选择不包括环路的路由和包含该路由的网路
公开(公告)号：US20090109901A1
公开(公告)日：2009-04-30
申请号：US12256753
申请日：2008-10-23
申请人： Yoshihisa KONDO , Satoko ITAYA , Peter DAVIS , Ryutaro SUZUKI , Sadao OBANA , Tetsuya ITO , Akira MATSUMOTO
发明人： Yoshihisa KONDO , Satoko ITAYA , Peter DAVIS , Ryutaro SUZUKI , Sadao OBANA , Tetsuya ITO , Akira MATSUMOTO
IPC分类号： H04W40/02
CPC分类号： H04W40/16 , H04L45/125 , H04L45/18
摘要： In wireless communication using links with neighbor wireless devices, a wireless device calculates ratios of throughput to maximum throughput for the links and calculates the costs of the links using the calculated ratios. Then the wireless device finds, for each destination, a route in which the sum of such calculated link costs is the minimum, and sends a packet to the destination using the route. As a consequence, routing can be done according to an isotonic, easy-to-implement routing protocol.
摘要翻译：在使用与相邻无线设备的链路的无线通信中，无线设备计算链路的吞吐量与最大吞吐量的比率，并使用所计算的比率来计算链路的成本。然后，无线设备针对每个目的地找到这样计算的链路成本的总和最小的路由，并且使用该路由向目的地发送分组。因此，可以根据等渗，易于实现的路由协议完成路由。

3. 发明申请

US20080315319A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20080315319A1
公开(公告)日：2008-12-25
申请号：US12136955
申请日：2008-06-11
申请人： Masayoshi ASANO , Yoshiyuki SUZUKI , Tetsuya ITO , Hajime WADA
发明人： Masayoshi ASANO , Yoshiyuki SUZUKI , Tetsuya ITO , Hajime WADA
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： H01L29/66181 , H01L21/84 , H01L27/0629 , H01L27/1052 , H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L29/945
摘要： A semiconductor device includes a dual gate CMOS logic circuit having gate electrodes with different conducting types and a trench capacitor type memory on a same substrate includes a trench of the substrate for the trench capacitor, a dielectric film formed in the trench, a first poly silicon film formed inside of the trench, and a cell plate electrode located above the dielectric film. The cell plate electrode includes a first poly silicon film formed on the dielectric film partially filling the trench, and a second poly silicon film formed on the first poly silicon film to completely fill the trench. The second poly silicon film includes a sufficient film thickness for forming gate electrodes, wherein the impurity concentration of the first poly silicon film is higher than the impurity concentration of the second poly silicon film.
摘要翻译：一种半导体器件包括具有不同导电类型的栅电极和同一衬底上的沟槽电容器型存储器的双栅极CMOS逻辑电路，包括用于沟槽电容器的衬底的沟槽，形成在沟槽中的电介质膜，第一多晶硅形成在沟槽内部的膜，以及位于电介质膜上方的电池板电极。电池板电极包括形成在部分地填充沟槽的电介质膜上的第一多晶硅膜和形成在第一多晶硅膜上以完全填充沟槽的第二多晶硅膜。第二多晶硅膜包括用于形成栅电极的足够的膜厚度，其中第一多晶硅膜的杂质浓度高于第二多晶硅膜的杂质浓度。

4. 发明申请

US20120211767A1 POWER CONVERTER 失效
标题翻译：电源转换器
公开(公告)号：US20120211767A1
公开(公告)日：2012-08-23
申请号：US13364606
申请日：2012-02-02
申请人： Yasuhiko KAWANAMI , Masato HIGUCHI , Akira SASAKI , Akira SOMA , Tasuku ISOBE , Tetsuya ITO
发明人： Yasuhiko KAWANAMI , Masato HIGUCHI , Akira SASAKI , Akira SOMA , Tasuku ISOBE , Tetsuya ITO
IPC分类号： H01L27/04
CPC分类号： H01L25/16 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/73 , H01L25/072 , H01L2224/291 , H01L2224/29116 , H01L2224/29118 , H01L2224/29144 , H01L2224/29339 , H01L2224/2949 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/37599 , H01L2224/40137 , H01L2224/73263 , H01L2224/84801 , H01L2924/00014 , H01L2924/09701 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2224/83801
摘要： The present power converter includes a power conversion semiconductor device, an electrode connection conductor which electrically connects multiple electrodes having the same potential, and also has a generally flat upper surface for electrically connecting to an exterior portion, and a sealing material provided so as to cover the power conversion semiconductor device, and also to expose the generally flat upper surface of the electrode connection conductor.
摘要翻译：本发明的功率转换器包括功率转换半导体器件，电连接具有相同电位的多个电极的电极连接导体，并且还具有用于电连接到外部的大致平坦的上表面，以及设置成覆盖功率转换半导体器件，并且还暴露电极连接导体的大致平坦的上表面。

5. 发明申请

US20110070704A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110070704A1
公开(公告)日：2011-03-24
申请号：US12951774
申请日：2010-11-22
申请人： Tetsuya ITO
发明人： Tetsuya ITO
IPC分类号： H01L21/8242 , H01L21/02
CPC分类号： H01L27/10894 , H01L27/0207 , H01L27/1085
摘要： It is disclosed a semiconductor device including a silicon substrate, provided with a plurality of cell active regions in a call region, an element isolation groove, formed in a portion, between any two of the plurality of cell active region, of the silicon substrate, a capacitor dielectric film, formed in the element isolation groove, a capacitor upper electrode, formed on the capacitor dielectric film, and configuring a capacitor together with the silicon substrate and the capacitor dielectric film. The semiconductor device is characterized in that a dummy active region is provided next to the cell region in the silicon substrate.
摘要翻译：公开了一种半导体器件，包括在通孔区域中设置有多个电池活性区域的硅衬底，形成在硅衬底的多个电池有源区域的任意两个之间的部分中的元件隔离槽，形成在元件隔离槽中的电容器电介质膜，形成在电容器电介质膜上的电容器上电极，以及与硅衬底和电容器电介质膜一起构成电容器。半导体器件的特征在于，在硅衬底中的单元区域旁边设置虚设有源区。

6. 发明申请

US20080165342A1 Position Detection System 有权
标题翻译：位置检测系统
公开(公告)号：US20080165342A1
公开(公告)日：2008-07-10
申请号：US12021038
申请日：2008-01-28
申请人： Satoru YOSHIDA , Tetsuya ITO , Masakatsu WATANABE , Satoshi UEDA
发明人： Satoru YOSHIDA , Tetsuya ITO , Masakatsu WATANABE , Satoshi UEDA
IPC分类号： G01J3/00
CPC分类号： A63F13/213 , A63B24/0003 , A63B63/00 , A63B2024/0043 , A63B2220/05 , A63B2220/806 , A63F9/02 , A63F9/0291 , A63F13/04 , A63F13/52 , A63F2300/1043 , A63F2300/1068 , A63F2300/1087 , A63F2300/8023 , A63F2300/8029 , F41J5/08 , G06F3/0308 , G06F3/0421 , G06F3/0425
摘要： Positions of a plurality of objects in a space are detected. A position of reflected light of an object passing through an infrared screen is specified by analyzing an image obtained by selectively imaging the infrared rays. When the infrared screen is formed in front the display, reflected light is only caused just in front of the display. When the infrared rays are selectively imaged, a picture displayed with visible light is separated from reflected light in the infrared region, and only the reflected light can be imaged. A position of the reflected light on the display can be specified by a publicly known image analysis technique.
摘要翻译：检测空间中的多个对象的位置。通过分析通过选择性地成像红外线而获得的图像来指定通过红外屏幕的物体的反射光的位置。当红外屏幕形成在显示器的前面时，反射光仅仅在显示器的前面。当选择性地成像红外线时，用可见光显示的图像与红外区域中的反射光分离，并且仅可以对反射光进行成像。可以通过公知的图像分析技术来指定反射光在显示器上的位置。

7. 发明申请

US20080224197A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080224197A1
公开(公告)日：2008-09-18
申请号：US12049592
申请日：2008-03-17
申请人： Tetsuya ITO
发明人： Tetsuya ITO
IPC分类号： H01L29/94 , H01L21/02
CPC分类号： H01L27/10894 , H01L27/0207 , H01L27/1085
摘要： It is disclosed a semiconductor device including a silicon substrate, provided with a plurality of cell active regions in a call region, an element isolation groove, formed in a portion, between any two of the plurality of cell active region, of the silicon substrate, a capacitor dielectric film, formed in the element isolation groove, a capacitor upper electrode, formed on the capacitor dielectric film, and configuring a capacitor together with the silicon substrate and the capacitor dielectric film. The semiconductor device is characterized in that a dummy active region is provided next to the cell region in the silicon substrate.
摘要翻译：公开了一种半导体器件，包括在通孔区域中设置有多个电池活性区域的硅衬底，形成在硅衬底的多个电池有源区域的任意两个之间的部分中的元件隔离槽，形成在元件隔离槽中的电容器电介质膜，形成在电容器电介质膜上的电容器上电极，以及与硅衬底和电容器电介质膜一起构成电容器。半导体器件的特征在于，在硅衬底中的单元区域旁边设置虚设有源区。

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