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1. 发明授权

US07781030B2 Infrared sensor manufacturing method suitable for mass production 有权
标题翻译：红外传感器制造方法适合批量生产
公开(公告)号：US07781030B2
公开(公告)日：2010-08-24
申请号：US11710962
申请日：2007-02-27
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta, legal representative , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
IPC分类号： B05D3/06 , G01J5/00
CPC分类号： G01J5/20
摘要： An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
摘要翻译：根据本发明的红外线传感器的制造方法包括在Si基板上形成绝缘材料的桥接结构的步骤，通过干式成膜法在桥式结构体上形成氧化钒薄膜的工序，将激光照射到氧化钒薄膜上，从而改变其材料特性，将具有改变的材料特性的氧化钒薄膜形成具有预定图案的辐照热电阻器的步骤，以及形成绝缘材料的保护层的步骤以覆盖具有预定图案和桥结构的测辐射热电阻。

2. 发明申请

US20070272863A1 Infrared sensor manufacturing method suitable for mass production 有权
标题翻译：红外传感器制造方法适合批量生产
公开(公告)号：US20070272863A1
公开(公告)日：2007-11-29
申请号：US11710962
申请日：2007-02-27
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
IPC分类号： G01J5/00 , C23C14/00 , C25D5/00
CPC分类号： G01J5/20
摘要： An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
摘要翻译：根据本发明的红外线传感器的制造方法包括在Si基板上形成绝缘材料的桥接结构的步骤，通过干式成膜法在桥式结构体上形成氧化钒薄膜的工序，将激光照射到氧化钒薄膜上，从而改变其材料特性，将具有改变的材料特性的氧化钒薄膜形成具有预定图案的辐照热电阻器的步骤，以及形成绝缘材料的保护层的步骤以覆盖具有预定图案和桥结构的测辐射热电阻。

3. 发明授权

US08215832B2 Infrared sensor and manufacturing method thereof 有权
标题翻译：红外线传感器及其制造方法
公开(公告)号：US08215832B2
公开(公告)日：2012-07-10
申请号：US12369871
申请日：2009-02-12
申请人： Seiji Kurashina
发明人： Seiji Kurashina
IPC分类号： G01J5/00 , G01J5/20 , H01L27/14
CPC分类号： G01J5/20 , G01J5/02 , G01J5/024 , G01J5/04 , G01J5/046 , G01J5/08 , G01J5/0853 , G01J5/22 , G01J2005/068
摘要： A first thermosensitive element including a temperature detecting unit that outputs a voltage corresponding to a temperature to which the unit rises from ambient temperature (temperature of surrounding environment) due to incident infrared, and a second thermosensitive element including a temperature detecting unit that outputs a voltage based on ambient temperature are formed above/on a silicon substrate. The temperature detecting unit of the first thermosensitive element is thermally insulated from the silicon substrate by a clearance (space). The temperature detecting unit of the second thermosensitive element is formed on a first sacrifice layer made of deposited diamond like carbon, and thermally connected to the silicon substrate by the first sacrifice layer. The infrared sensor detects an amount of incident infrared based on the difference between output voltages of the first and second thermosensitive elements.
摘要翻译：第一热敏元件，包括温度检测单元，该温度检测单元输出对应于由于入射红外线的单元从环境温度（周围环境的温度）升高的温度的电压;以及第二热敏元件，其包括温度检测单元，其输出电压基于环境温度形成在硅衬底之上/之上。第一热敏元件的温度检测单元通过间隙（空间）与硅衬底热绝缘。第二热敏元件的温度检测单元形成在由沉积的类金刚石碳制成的第一牺牲层上，并且通过第一牺牲层热连接到硅衬底。红外传感器基于第一和第二热敏元件的输出电压之差检测入射红外线的量。

4. 发明申请

US20120106085A1 VACUUM SEALED PACKAGE, PRINTED CIRCUIT BOARD HAVING VACUUM SEALED PACKAGE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING VACUUM SEALED PACKAGE 审中-公开
标题翻译：真空密封包装，具有真空密封包装的印刷电路板，电子设备和制造真空密封包装的方法
公开(公告)号：US20120106085A1
公开(公告)日：2012-05-03
申请号：US13148524
申请日：2010-01-27
申请人： Takao Yamazaki , Masahiko Sano , Seiji Kurashina
发明人： Takao Yamazaki , Masahiko Sano , Seiji Kurashina
IPC分类号： H05K7/20 , H05K7/10
CPC分类号： H05K5/066 , G01J5/029 , G01J5/045 , H01L23/057 , H01L23/10 , H01L23/26 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/15192 , H01L2924/16151 , H01L2924/16152 , H01L2924/19107 , H01L2924/3025 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A vacuum sealed package includes a package main body portion in which a first main body portion and a second main body portion are bonded via a hollow portion, and a getter material and an electronic device that are provided within the hollow portion, and in the state of the hollow portion being evacuated via a through-hole that brings the inside and the outside of the hollow portion into communication, the package main body portion is sealed with a sealing member, the getter material and the electronic device are connected to a first conductor pad and a second conductor pad, the first conductor pad is connected with a third conductor pad via a thermally conductive material, and the second conductor pad is electrically connected with a fourth conductor pad on a wiring substrate.
摘要翻译：真空密封包装体包括：封装体主体部分，其中第一主体部分和第二主体部分经由中空部分接合;以及吸气材料和电子装置，其设置在中空部分内，并且处于该状态通过使中空部的内部和外部连通的通孔而使空心部抽真空，将封装主体部用密封部件密封，吸气材料和电子装置与第一导体焊盘和第二导体焊盘，第一导体焊盘通过导热材料与第三导体焊盘连接，并且第二导体焊盘与布线基板上的第四导体焊盘电连接。

5. 发明授权

US07276698B2 Thermal-type infra-red ray solid-state image sensor and method of fabricating the same 失效
标题翻译：热式红外固体图像传感器及其制造方法
公开(公告)号：US07276698B2
公开(公告)日：2007-10-02
申请号：US11085183
申请日：2005-03-22
申请人： Shigeru Tohyama , Seiji Kurashina
发明人： Shigeru Tohyama , Seiji Kurashina
IPC分类号： G01J5/00 , G01T1/24
CPC分类号： G01J5/20
摘要： A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-readout circuit, a contact electrode formed on the substrate and electrically connected to the signal-readout circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.
摘要翻译：热型红外线固态图像传感器包括至少一个用于检测红外线的装置，其中该装置由包括信号读出电路的基板，形成在该基板上的接触电极和电连接与信号读出电路相隔离的隔膜与衬底隔开，支撑隔膜的支撑件，使得隔膜浮在基板上方，并且由导电材料构成，以将接触电极电连接到隔膜，以及罩形成在隔膜上，用于防止红外线辐射到支架上，吸收红外线，并将由此吸收的红外线产生的热传递到隔膜。所述罩由侧壁，其位于所述隔膜上，以及从所述侧壁的上边缘向所述侧壁向内延伸的上板，所述上板形成有开口。

6. 发明申请

US20050218326A1 Thermal-type infra-red ray solid-state image sensor and method of fabricating the same 失效
标题翻译：热式红外固体图像传感器及其制造方法
公开(公告)号：US20050218326A1
公开(公告)日：2005-10-06
申请号：US11085183
申请日：2005-03-22
申请人： Shigeru Tohyama , Seiji Kurashina
发明人： Shigeru Tohyama , Seiji Kurashina
IPC分类号： H01L27/14 , G01J5/20 , H01L37/00 , G01J5/00
CPC分类号： G01J5/20
摘要： A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-readout circuit, a contact electrode formed on the substrate and electrically connected to the signal-readout circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.
摘要翻译：热型红外线固态图像传感器包括至少一个用于检测红外线的装置，其中该装置由包括信号读出电路的基板，形成在该基板上的接触电极和电连接与信号读出电路相隔离的隔膜与衬底隔开，支撑隔膜的支撑件，使得隔膜浮在基板上方，并且由导电材料构成，以将接触电极电连接到隔膜，以及罩形成在隔膜上，用于防止红外线辐射到支架上，吸收红外线，并将由此吸收的红外线产生的热传递到隔膜。所述罩由侧壁，其位于所述隔膜上，以及从所述侧壁的上边缘向所述侧壁向内延伸的上板，所述上板形成有开口。

7. 发明授权

US08541742B2 Bolometer-type THz wave detector 有权
标题翻译：分光光度计型太赫兹波检测器
公开(公告)号：US08541742B2
公开(公告)日：2013-09-24
申请号：US13422120
申请日：2012-03-16
申请人： Seiji Kurashina , Masaru Miyoshi
发明人： Seiji Kurashina , Masaru Miyoshi
IPC分类号： G01J5/20
CPC分类号： G01J5/045 , G01J5/0215 , G01J5/0225 , G01J5/024 , G01J5/06 , G01J5/0853 , G01J5/20
摘要： The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 μm.
摘要翻译：根据本发明的辐照热计式太赫兹波检测器具有热隔离结构，其中包括与电气布线连接的测辐射热计薄膜的温度检测部分通过包括电气的支撑部分从基板升起的状态被支撑连接到形成在基板中的读出集成电路的布线，检测器包括形成在基板上的反射膜，形成在温度检测部分的前表面或后表面或内部位置的吸收膜，由此光学谐振结构由反射膜和吸收膜形成，并且在反射膜上形成电介质膜。电介质膜厚度f设定为电介质膜的上表面与温度检测部的下表面之间的气隙小于8μm。

8. 发明申请

US20110303847A1 BOLOMETER TYPE TERAHERTZ WAVE DETECTOR 有权
标题翻译： BOLOMETER TYPE TERAHERTZ波检测器
公开(公告)号：US20110303847A1
公开(公告)日：2011-12-15
申请号：US13151837
申请日：2011-06-02
申请人： Seiji Kurashina , Naoki Oda
发明人： Seiji Kurashina , Naoki Oda
IPC分类号： H01L31/00
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/08 , G01J5/0853 , H01L27/14669 , H01L31/085
摘要： A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap.
摘要翻译：测辐射热计型太赫兹波检测器包括：温度检测部分，其具有形成在基板上的薄辐射热计膜;反射膜，其在面对温度检测部分的位置处反射在基板上形成的太赫兹波;以及吸收膜，形成在顶部檐状构件的一部分的表面从温度检测部分的周边边缘部分延伸到内部并且吸收太赫兹波。反射膜和吸收膜形成光学谐振结构。热隔离结构由支撑温度检测部分的支撑部分形成，使得其通过间隙与基板分离。檐状构件由支撑部支撑，使得其与基板间隔开。

9. 发明授权

US6137663A Magnetic head and method for magnetic recording and playback 失效
标题翻译：磁头和磁记录和播放方法
公开(公告)号：US6137663A
公开(公告)日：2000-10-24
申请号：US998057
申请日：1997-12-24
申请人： Seiji Kurashina
发明人： Seiji Kurashina
IPC分类号： G11B5/02 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3903 , G11B5/02 , G11B5/3932 , G11B5/3993 , G11B5/3113
摘要： A magnetoresistive effect type magnetic head has a magnetoresistive effect (magnetoresistive effect film) and a soft adjacent layer (SAL) that is disposed in opposition to the magnetoresistive effect film via an intervening non-magnetic film, for the purpose of applying a transversal bias magnetic field to the magnetoresistive effect film, and also has an antiferromagnetic film which is disposed so as to be in contact with at least part of the magnetoresistive effect film, for the purpose of applying a longitudinal bias magnetic field to the magnetoresistive effect film. The surface area of the region over which the magnetoresistive effect film makes contact with the antiferromagnetic film is established so as to be greater than the surface area of the active region thereof which does not contact the antiferromagnetic film.
摘要翻译：磁阻效应型磁头具有磁阻效应（磁阻效应膜）和通过中间非磁性膜与磁阻效应膜相对设置的软相邻层（SAL），用于施加横向偏磁磁场效应膜，并且为了向磁阻效应膜施加纵向偏置磁场，还具有设置成与至少一部分磁阻效应膜接触的反铁磁性膜。磁阻效应膜与反铁磁膜接触的区域的表面积被建立为大于其不接触反铁磁膜的有源区的表面积。

10. 发明申请

US20120235045A1 BOLOMETER-TYPE THz WAVE DETECTOR 有权
标题翻译： BOLOMETER型太赫兹波检测器
公开(公告)号：US20120235045A1
公开(公告)日：2012-09-20
申请号：US13422120
申请日：2012-03-16
申请人： Seiji Kurashina , Masaru Miyoshi
发明人： Seiji Kurashina , Masaru Miyoshi
IPC分类号： G01J5/10
CPC分类号： G01J5/045 , G01J5/0215 , G01J5/0225 , G01J5/024 , G01J5/06 , G01J5/0853 , G01J5/20
摘要： The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 μm.
摘要翻译：根据本发明的辐照热计式太赫兹波检测器具有热隔离结构，其中包括与电气布线连接的测辐射热计薄膜的温度检测部分通过包括电气的支撑部分从基板升起的状态被支撑连接到形成在基板中的读出集成电路的布线，检测器包括形成在基板上的反射膜，形成在温度检测部分的前表面或后表面或内部位置的吸收膜，由此光学谐振结构由反射膜和吸收膜形成，并且在反射膜上形成电介质膜。电介质膜厚度f设定为电介质膜的上表面与温度检测部的下表面之间的气隙小于8μm。

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