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1. 发明授权

US08686441B2 Life-improved semiconductor light emitting device 有权
标题翻译：改善寿命的半导体发光器件
公开(公告)号：US08686441B2
公开(公告)日：2014-04-01
申请号：US13441679
申请日：2012-04-06
申请人： Toshiaki Ogawa , Hisashi Kasai , Masahiko Sano
发明人： Toshiaki Ogawa , Hisashi Kasai , Masahiko Sano
IPC分类号： H01L27/15 , H01L33/42 , H01L33/40 , H01L33/46
CPC分类号： H01L27/15 , H01L33/405 , H01L33/42 , H01L33/46 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20. The intermediate layer 17 is formed of a material containing an element with larger ionization tendency than the reflective layer 16.
摘要翻译：半导体发光器件包括第一和第二半导体层，有源区，透明导电层13，反射结构20和第一电极。第二半导体层具有与第一半导体层不同的导电性。有源区布置在第一和第二半导体层之间。透明导电层13布置在第一半导体层上或上方。反射结构20布置在透明导电层13上或上方。第一电极布置在反射结构20上或上方，并且电连接到第一半导体层。反射结构20至少包括反射层16.中间层17介于透明导电层13和反射结构20之间。中间层17由含有比电离倾向大的元素的材料形成反射层16。

2. 发明申请

US20120256221A1 LIFE-IMPROVED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：生命改进的半导体发光器件
公开(公告)号：US20120256221A1
公开(公告)日：2012-10-11
申请号：US13441679
申请日：2012-04-06
申请人： Toshiaki Ogawa , Hisashi Kasai , Masahiko Sano
发明人： Toshiaki Ogawa , Hisashi Kasai , Masahiko Sano
IPC分类号： H01L33/60 , B82Y99/00
CPC分类号： H01L27/15 , H01L33/405 , H01L33/42 , H01L33/46 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20. The intermediate layer 17 is formed of a material containing an element with larger ionization tendency than the reflective layer 16.
摘要翻译：半导体发光器件包括第一和第二半导体层，有源区，透明导电层13，反射结构20和第一电极。第二半导体层具有与第一半导体层不同的导电性。有源区布置在第一和第二半导体层之间。透明导电层13布置在第一半导体层上或上方。反射结构20布置在透明导电层13上或上方。第一电极布置在反射结构20上或上方，并且电连接到第一半导体层。反射结构20至少包括反射层16.中间层17介于透明导电层13和反射结构20之间。中间层17由含有比电离倾向大的元素的材料形成反射层16。

3. 发明申请

US20100266815A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
公开(公告)号：US20100266815A1
公开(公告)日：2010-10-21
申请号：US12827677
申请日：2010-06-30
申请人： Isamu NIKI , Motokazu Yamada , Masahiko Sano , Shuji Shioji
发明人： Isamu NIKI , Motokazu Yamada , Masahiko Sano , Shuji Shioji
IPC分类号： B32B3/10
CPC分类号： H01L33/16 , H01L21/02378 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/26 , H01L33/32 , H01L2933/0083 , Y10T428/24355 , Y10T428/24479
摘要： A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

4. 发明授权

US07745245B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07745245B2
公开(公告)日：2010-06-29
申请号：US12022794
申请日：2008-01-30
申请人： Isamu Niki , Motokazu Yamada , Masahiko Sano , Shuji Shioji
发明人： Isamu Niki , Motokazu Yamada , Masahiko Sano , Shuji Shioji
IPC分类号： H01L21/02 , H01L21/20 , H01L33/00
CPC分类号： H01L33/16 , H01L21/02378 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/26 , H01L33/32 , H01L2933/0083 , Y10T428/24355 , Y10T428/24479
摘要： At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.
摘要翻译：在基板的表面部分上形成至少一个凹部和/或突出部分，用于散射或衍射在发光区域中产生的光。凹部和/或突出部分具有防止在半导体层中发生晶体缺陷的形状。

5. 发明授权

US06711191B1 Nitride semiconductor laser device 有权
公开(公告)号：US06711191B1
公开(公告)日：2004-03-23
申请号：US09519440
申请日：2000-03-03
申请人： Tokuya Kozaki , Masahiko Sano , Shuji Nakamura , Shinichi Nagahama
发明人： Tokuya Kozaki , Masahiko Sano , Shuji Nakamura , Shinichi Nagahama
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0655 , H01S5/2004 , H01S5/2031 , H01S5/22 , H01S5/2214 , H01S5/2216 , H01S5/223 , H01S5/2231 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 &mgr;m and the etching depth is below the thickness of the p-side cladding layer of 0.1 &mgr;m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 &mgr;m, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

6. 发明授权

US06184782B2 Vehicle with rear vehicle detecting apparatus 失效
标题翻译：具有后车辆检测装置的车辆
公开(公告)号：US06184782B2
公开(公告)日：2001-02-06
申请号：US09328448
申请日：1999-06-09
申请人： Naoki Oda , Masahiko Sano , Satosi Baba , Junshiro Motoyama
发明人： Naoki Oda , Masahiko Sano , Satosi Baba , Junshiro Motoyama
IPC分类号： B60Q100
CPC分类号： B60Q9/008
摘要： In order to achieve an aspect of the present invention, a rear vehicle detecting apparatus of a vehicle include an alarm unit, a temperature detecting section, a reference temperature data generating section, a comparing section, and a drive section. The temperature detecting section detects a first temperature data based on heat radiated from another vehicle which exists behind the vehicle. The reference temperature data generating section generates a second temperature data as a reference. The comparing section compares the first temperature data and the second temperature data. The driving section drives the alarm unit based on the comparing result by the comparing section.
摘要翻译：为了实现本发明的一个方面，车辆的后方车辆检测装置包括警报单元，温度检测部，基准温度数据生成部，比较部以及驱动部。温度检测部根据存在于车辆后方的其他车辆发出的热量来检测第一温度数据。基准温度数据生成部生成第二温度数据作为基准。比较部分比较第一温度数据和第二温度数据。驱动部根据比较部的比较结果来驱动报警部。

7. 发明授权

US08796721B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08796721B2
公开(公告)日：2014-08-05
申请号：US13730354
申请日：2012-12-28
申请人： Isamu Niki , Motokazu Yamada , Masahiko Sano , Shuji Shioji
发明人： Isamu Niki , Motokazu Yamada , Masahiko Sano , Shuji Shioji
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L21/02378 , H01L21/0254 , H01L21/02647 , H01L33/007 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/26 , H01L33/32 , H01L2933/0083 , Y10T428/24355 , Y10T428/24479
摘要： A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
摘要翻译：提供了包括基板，电极和发光区域的半导体发光器件。基板可以具有在基板的基本上整个表面上以重复图案形成的突出部分，而表面的其余部分可以基本上是平坦的。沿着与基板的表面正交的平面截取的突出部分的横截面可以是半圆形的。突出部分的横截面可以是凸起的形状。可以在衬底上形成缓冲层和GaN层。

8. 发明授权

US08525323B2 Encapsulating package, printed circuit board, electronic device and method for manufacturing encapsulating package 有权
标题翻译：封装封装，印刷电路板，电子器件和封装封装制造方法
公开(公告)号：US08525323B2
公开(公告)日：2013-09-03
申请号：US13054251
申请日：2009-01-28
申请人： Takao Yamazaki , Masahiko Sano , Seiji Kurashina , Yoshimichi Sogawa
发明人： Takao Yamazaki , Masahiko Sano , Seiji Kurashina , Yoshimichi Sogawa
IPC分类号： H01L23/12
CPC分类号： H05K3/30 , G01J5/04 , G01J5/045 , H01L21/54 , H01L23/055 , H01L23/10 , H01L23/26 , H01L24/73 , H01L31/0203 , H01L2224/32225 , H01L2224/48227 , H01L2224/4823 , H01L2224/73265 , H01L2224/92247 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/15192 , H01L2924/15311 , H01L2924/16151 , H01L2924/16152 , H01L2924/3025 , Y10T29/49146 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention is: a package main body section having a hollow section; and an electronic device provided in the hollow section in the package main body section, in the package main body section, there being formed a through hole, through which the hollow section communicates with outside of the package main body section, and in the through hole, there being provided a sealing section in which a vicinity of the through hole is partly heated and a constituent material of the package main body section is melted to thereby block the through hole.
摘要翻译：本发明是一种具有中空部分的包装主体部分，以及电子装置，其设置在所述封装主体部的中空部中，在所述封装体主体部中形成有贯通孔，所述中空部通过所述通孔与所述封装主体部的外部连通，并且在所述通孔设置有一个密封部分，其中通孔附近被部分地加热，并且包装主体部分的组成材料熔化，从而阻挡通孔。

9. 发明授权

US08030665B2 Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
标题翻译：包含键合衬底的氮化物半导体器件及其制造方法
公开(公告)号：US08030665B2
公开(公告)日：2011-10-04
申请号：US12113030
申请日：2008-04-30
申请人： Shinichi Nagahama , Masahiko Sano , Tomoya Yanamoto , Keiji Sakamoto , Masashi Yamamoto , Daisuke Morita
发明人： Shinichi Nagahama , Masahiko Sano , Tomoya Yanamoto , Keiji Sakamoto , Masashi Yamamoto , Daisuke Morita
IPC分类号： H01L29/26
CPC分类号： H01L33/44 , H01L21/76251 , H01L33/0079 , H01L33/32 , H01L33/483 , H01L33/508 , H01L33/62 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/01013 , H01L2924/01037 , H01L2924/12032 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
摘要翻译：用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数用于生长氮化物半导体。在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

10. 发明申请

US20110233596A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20110233596A1
公开(公告)日：2011-09-29
申请号：US13155045
申请日：2011-06-07
申请人： Masahiko SANO , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko SANO , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L33/42
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，较高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个到发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

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