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    • 5. 发明申请
    • TANTALUM COMPOUND, METHOD FOR PRODUCING SAME, TANTALUM-CONTAINING THIN FILM AND METHOD FOR FORMING SAME
    • 钛化合物,其制造方法,含有薄膜的薄膜及其形成方法
    • US20090043119A1
    • 2009-02-12
    • US11815386
    • 2006-01-25
    • Kenichi SekimotoKen-ichi TadaMayumi TakamoriTetsu YamakawaTaishi FurukawaNoriaki Oshima
    • Kenichi SekimotoKen-ichi TadaMayumi TakamoriTetsu YamakawaTaishi FurukawaNoriaki Oshima
    • C07F9/00
    • C23C16/18C07F17/00
    • Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6) (In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R3 to R6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.
    • 本发明的目的是提供一种新颖的钽化合物,其能够选择性地形成不含卤素等的含钽薄膜,以及含有所需元素的各种含钽薄膜及其制造方法 并且还提供了一种稳定地形成含有所需元素的含钽薄膜的方法。 本发明涉及由下式(1)表示的钽化合物(式中,R1表示碳原子数2〜6的直链烷基)或通式(2)表示的钽化合物, (式中,R 2表示碳原子数2〜6的直链烷基)及其制造方法。 本发明还涉及通过使用由以下通式(6)表示的钽化合物形成含钽薄膜(在式中,j,k,m和n是从1到满足j + k的整数 = 5,m + n = 5,R3〜R6表示氢原子,碳原子数1〜6的烷基等)作为原料。