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1. 发明授权

US5144603A Optical head incorporating refractive index distribution changeable lens 失效
$Optical head incorporating refractive index distribution changeable lens$
标题翻译：光头包含折射率分布可变透镜
公开(公告)号：US5144603A
公开(公告)日：1992-09-01
申请号：US663596
申请日：1991-03-01
申请人： Teruo Mozume , Isao Ohbu
发明人： Teruo Mozume , Isao Ohbu
IPC分类号： G02B3/00 , G11B7/135
CPC分类号： G02B3/0081 , G11B7/1374
摘要： An optical head using a refractive index distribution changeable lens by which light focused on a recording surface of an optical disc is precisely and positionally controlled. The refractive index distribution of this refractive index distribution changeable lens is changed by changing an electric field applied thereto so as to precisely displace the position of the focus point of the emitted light on the recording surface of the optical disc.
摘要翻译：使用折射率分布可变透镜的光学头，通过该光学头精确且位置地控制聚焦在光盘的记录表面上的光。通过改变施加到其上的电场来改变该折射率分布可变透镜的折射率分布，以便精确地将发射的光的聚焦点的位置移动到光盘的记录表面上。

2. 发明授权

US08227836B2 Semiconductor device and radio communication device 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US08227836B2
公开(公告)日：2012-07-24
申请号：US12579975
申请日：2009-10-15
申请人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L27/082 , H01L27/102
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，每个具有单位晶体管Q的第一数量（例如七个）的晶体管形成区域3a，3b和3e以及每个具有第二数量的晶体管形成区域3c和3d（例如，，四个）单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

3. 发明授权

US06576937B2 Semiconductor device and power amplifier using the same 失效
标题翻译：半导体器件和功率放大器使用相同
公开(公告)号：US06576937B2
公开(公告)日：2003-06-10
申请号：US09863343
申请日：2001-05-24
申请人： Hiroyuki Takazawa , Tohru Oka , Isao Ohbu , Yoshinori Imamura
发明人： Hiroyuki Takazawa , Tohru Oka , Isao Ohbu , Yoshinori Imamura
IPC分类号： H01L310328
CPC分类号： H01L29/7371 , H03F3/60
摘要： A semiconductor device including a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7×1022 cm−3. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.
摘要翻译：一种半导体器件，包括具有包含铟的半导体的发射极层的双极晶体管和形成在发射极层的保护环的表面上的含有氧和氧的保护绝缘膜，其中该保护绝缘膜具有密度的氧气小于7×1022厘米-3。该半导体器件防止性能恶化并确保功率放大器的高性能。

4. 发明授权

US07368988B2 High-frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：US07368988B2
公开(公告)日：2008-05-06
申请号：US11489609
申请日：2006-07-20
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
IPC分类号： H03G5/16
CPC分类号： H03G3/3042 , H03F1/30 , H03F3/189 , H03F3/68 , H03G3/3047
摘要： In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.
摘要翻译：在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。

5. 发明申请

US20070164316A1 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same 有权
公开(公告)号：US20070164316A1
公开(公告)日：2007-07-19
申请号：US11723769
申请日：2007-03-22
申请人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
发明人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
IPC分类号： H01L31/00
CPC分类号： H01L29/7304 , H01L27/0605 , H01L29/7371 , H03F2200/444 , H03F2203/21178
摘要： A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.

6. 发明申请

US20060138460A1 Semiconductor device and radio communication device 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20060138460A1
公开(公告)日：2006-06-29
申请号：US11319084
申请日：2005-12-28
申请人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L31/109
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，具有第一数量（7）的单位晶体管Q的晶体管形成区域3a，3b和3e，以及分别具有第二（4个）晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一个数量大于第二个数量。

7. 发明授权

US07045877B2 Semiconductor protection device 失效
标题翻译：半导体保护装置
公开(公告)号：US07045877B2
公开(公告)日：2006-05-16
申请号：US10420740
申请日：2003-04-23
申请人： Yasunari Umemoto , Hideyuki Ono , Tomonori Tanoue , Yasuo Ohsone , Isao Ohbu , Chushiro Kusano , Atsushi Kurokawa , Masao Yamane
发明人： Yasunari Umemoto , Hideyuki Ono , Tomonori Tanoue , Yasuo Ohsone , Isao Ohbu , Chushiro Kusano , Atsushi Kurokawa , Masao Yamane
IPC分类号： H01L31/072
CPC分类号： H01L27/0825 , H01L27/0259 , H01L29/7371 , H01L2224/48091 , H01L2224/73265 , H03K17/08146 , H03K17/615 , H01L2924/00014
摘要： The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.
摘要翻译：本发明旨在提高对半导体器件的破坏性。具有连接在高输出的放大电路的输出（集电极和发射极）之间的达林顿的多个双极晶体管的保护电路与放大电路并联电连接。放大电路具有彼此并联连接的多个单元HBT（异质结双极晶体管）。保护电路具有包括具有多个双极型晶体管Q 1至Q 5的第一组保护电路和具有多个双极晶体管的第二组保护电路的两级配置。

8. 发明授权

US07001819B2 Semiconductor device and power amplifier using the same 失效
公开(公告)号：US07001819B2
公开(公告)日：2006-02-21
申请号：US10750772
申请日：2004-01-05
申请人： Kazuhiro Mochizuki , Tohru Oka , Isao Ohbu , Kiichi Yamashita
发明人： Kazuhiro Mochizuki , Tohru Oka , Isao Ohbu , Kiichi Yamashita
IPC分类号： H01L21/8222
CPC分类号： H01L21/8252 , H01L27/0605 , H01L2224/48091 , H01L2224/48227 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12032 , H01L2924/1305 , H01L2924/1423 , H01L2924/15153 , H01L2924/1517 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H03F1/302 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.

9. 发明授权

US07804109B2 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same 有权
标题翻译：异质结双极晶体管及其制造方法及使用其的功率放大器
公开(公告)号：US07804109B2
公开(公告)日：2010-09-28
申请号：US11723769
申请日：2007-03-22
申请人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
发明人： Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
IPC分类号： H01L29/73
CPC分类号： H01L29/7304 , H01L27/0605 , H01L29/7371 , H03F2200/444 , H03F2203/21178
摘要： A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
摘要翻译：一种异质结双极晶体管，其具有InGaP作为发射极层，并且具有可靠的导电和热稳定性，其中GaAs层插入在InGaP发射极层和AlGaAs镇流电阻层之间，以防止从基极层反向注入的空穴扩散，达到AlGaAs镇流电阻层。

10. 发明申请

US20100032720A1 SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20100032720A1
公开(公告)日：2010-02-11
申请号：US12579975
申请日：2009-10-15
申请人： Satoshi SASAKI , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi SASAKI , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L27/082 , H01L23/52
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，每个具有单位晶体管Q的第一数量（例如七个）的晶体管形成区域3a，3b和3e以及每个具有第二数量的晶体管形成区域3c和3d（例如，，四个）单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

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