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1. 发明授权

US06172857B2 Magnetoresistive head with azimuth angle and magnetic recording/reproducing tape apparatus using same 失效
标题翻译：具有方位角的磁阻头和使用其的磁记录/再现磁带装置
公开(公告)号：US06172857B2
公开(公告)日：2001-01-09
申请号：US09225913
申请日：1999-01-05
申请人： Teruo Inaguma , Seiji Onoe , Hiroshi Kano , Yoshito Ikeda , Seiichi Onodera
发明人： Teruo Inaguma , Seiji Onoe , Hiroshi Kano , Yoshito Ikeda , Seiichi Onodera
IPC分类号： G11B552
CPC分类号： G11B5/53 , G11B5/0086 , G11B5/23 , G11B5/4893
摘要： A magnetoresistive head includes a magnetoresistive element sandwiched between a pair of soft magnetic material-made shields to detect signal from a magnetic tape under a magnetoresistance effect, the magnetoresistive element having a magnetic sensor disposed obliquely, at a predetermined azimuth angle, to a direction perpendicular in which the magnetic tape is fed or moved; the magnetoresistive head being installed on a rotating drum to read signal on the magnetic tape by the helical scanning method. A recording/reproducing apparatus includes a rotating drum having installed thereon the magnetoresistive head as reading head and an inductive magnetic head as writing head, to write and/or read signal from the magnetic tape by the helical scanning method.
摘要翻译：磁阻头包括夹在一对软磁材料制成的屏蔽之间以在磁阻效应下检测来自磁带的信号的磁阻元件，磁阻元件具有以预定的方位角倾斜地垂直于垂直方向其中磁带被馈送或移动; 磁阻头安装在旋转鼓上，通过螺旋扫描方法读取磁带上的信号。一种记录/再现装置，包括：旋转鼓，其上安装有作为读取头的磁阻头和作为书写头的感应磁头，通过螺旋扫描方法从磁带写入和/或读取信号。

2. 发明授权

US06909584B2 Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element sandwiched with conductive gap layers between a pair of magnetic shielding layers 有权
标题翻译：磁隧道效应型磁头，其具有夹在一对磁屏蔽层之间的导电间隙层的磁性隧道结元件
公开(公告)号：US06909584B2
公开(公告)日：2005-06-21
申请号：US09897236
申请日：2001-07-02
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G01R33/09 , G11B5/39 , G11B5/40 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： In a magnetic tunnel effect type magnetic head (20) having a magnetic tunnel junction element (26) sandwiched with conductive gap layers (25) and (27) between a pair of magnetic shielding layers (24) and (28), the conductive gap layers (25) and (27) are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head (20) can have an improved face opposite to a magnetic recording medium.
摘要翻译：在具有夹在一对磁屏蔽层（24）和（28）之间的导电间隙层（25）和（27）的磁性隧道结元件（26）的磁隧道效应型磁头（20）中，导电间隙层（25）和（27）由至少一个含有选自Ta，Ti，Cr，W，Mo，V，Nb和Zr的金属元素的非磁性金属层形成。因此，磁头（20）可以具有与磁记录介质相对的改进面。

3. 发明授权

US07092225B2 Magnetic tunnel effect type magnetic head, and method of producing same 失效
公开(公告)号：US07092225B2
公开(公告)日：2006-08-15
申请号：US11091084
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.

4. 发明申请

US20050237675A1 Magnetic tunnel effect type magnetic head, and recorder/player 有权
标题翻译：磁隧道效应型磁头，录音机/播放机
公开(公告)号：US20050237675A1
公开(公告)日：2005-10-27
申请号：US11158117
申请日：2005-06-20
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G01R33/09 , G11B5/39 , G11B5/40 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： In a magnetic tunnel effect type magnetic head 20 having a magnetic tunnel junction element 26 sandwiched with conductive gap layers 25 and 27 between a pair of magnetic shielding layers 24 and 28, the conductive gap layers 25 and 27 are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head 20 can have an improved face opposite to a magnetic recording medium.
摘要翻译：在具有被导电间隙层25和27夹在一对磁屏蔽层24和28之间的磁性隧道结元件26的磁隧道效应型磁头20中，导电间隙层25和27由至少一个非磁性金属含有选自Ta，Ti，Cr，W，Mo，V，Nb和Zr的金属元素的层。因此，磁头20可以具有与磁记录介质相对的改进的面。

5. 发明授权

US06760201B2 Magnetic tunnel element and its manufacturing method, thin-film magnetic head, magnetic memory and magnetic sensor 有权
标题翻译：磁隧道元件，薄膜磁头和磁传感器。
公开(公告)号：US06760201B2
公开(公告)日：2004-07-06
申请号：US10059906
申请日：2002-01-29
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G11B5127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/302 , H01L27/224 , H01L27/228
摘要： A magnetic tunnel element (1) including a plurality of ferromagnetic films (5, 9) laminated across an insulating film (11) formed of metal oxide films (6, 7, 8) and in which asymmetric tunnel barriers are formed along the direction in which the ferromagnetic films (5, 9) are laminated by this insulating film (11) (6, 7, 8). There are also constructed a thin-film magnetic head, a magnetic memory and a magnetic sensor, each of which includes the magnetic tunnel element (1). Since a magnetoresistive ratio can be suppressed from being lowered by decreasing a bias voltage dependency, there are provided a highly-reliable magnetic tunnel element which can obtain a high output when the magnetic tunnel element is applied to a thin-film magnetic head and the like and a method of manufacturing such a magnetic tunnel element. When a magnetic head, a magnetic memory and a magnetic sensor include this magnetic tunnel element, they become highly reliable and also become able to obtain a high output.
摘要翻译：一种磁隧道元件（1），包括层叠在由金属氧化物膜（6,7,8）形成的绝缘膜（11）上的多个铁磁膜（5,9），并且沿着所述方向形成非对称的隧道屏障通过该绝缘膜（11）（6,7,8）层叠铁磁膜（5,9）。还构造了薄膜磁头，磁存储器和磁传感器，每个磁头包括磁通元件（1）。由于可以通过降低偏置电压依赖性来抑制磁阻比降低，所以提供了一种高可靠性的磁隧道元件，当将磁隧道元件施加到薄膜磁头等时可以获得高输出以及制造这种磁性隧道元件的方法。当磁头，磁存储器和磁传感器包括该磁通元件时，它们变得高度可靠，并且也能够获得高输出。

6. 发明授权

US07092224B2 Magnetic tunnel effect type magnetic head, and method of producing same 失效
标题翻译：磁隧道效应型磁头及其制造方法
公开(公告)号：US07092224B2
公开(公告)日：2006-08-15
申请号：US11091040
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.
摘要翻译：一种磁隧道效应型磁头，包括形成在第一软磁性导电层上的第一软磁性导电层，该第一软磁性导电层提供下部屏蔽层24，金属氧化物层25和第一非磁性导电层，以提供较低的间隙层26，形成在第一非磁性导电层上以提供磁性隧道结元件27的磁性隧道结层34，形成在磁性隧道结层34上以提供上间隙层28的第二非磁性导电层; 以及形成在第二非磁性导电层上以提供上屏蔽层29的第二软磁导电层，下间隙层26中的金属氧化物层25形成在至少磁性隧道结层27下面。

7. 发明申请

US20050190506A1 Magnetic reproducing head, head drum apparatus, and magnetic recording-reproducing apparatus 失效
标题翻译：磁再现头，磁头鼓装置和磁记录再现装置
公开(公告)号：US20050190506A1
公开(公告)日：2005-09-01
申请号：US11117207
申请日：2005-04-28
申请人： Yutaka Souda , Yoshimi Takahashi , Susumu Sato , Seiji Onoe
发明人： Yutaka Souda , Yoshimi Takahashi , Susumu Sato , Seiji Onoe
IPC分类号： G11B5/39 , G11B5/10 , G11B5/40 , G11B5/53 , G11B5/52
CPC分类号： G11B5/10 , G11B5/3903 , G11B5/40 , G11B5/53
摘要： A head substrate and a protective substrate are formed of an electrostatic-discharge resistant conductive material having an electrical resistivity of 102 to 1010 Ωcm. These substrates are electrically connected to a base metal through the use of conductive paste and are set to a ground potential via the base metal and a rotating drum. This suppresses a discharge current flowing through an MR element when an electrostatically charged substance touches or approaches a magnetic reproducing head, a terminal, a conducting wire, etc. to generate an electrostatic discharge. The magnetic reproducing head including an MR element and the like is prevented against an electrostatic discharge damage. It is possible to provide the magnetic reproducing head, a head drum apparatus, and a magnetic recording-reproducing apparatus which can highly effectively prevent an electrostatic discharge damage.
摘要翻译：头基板和保护基板由电阻率为10〜10Ω·cm的静电电阻导电材料形成。这些基板通过使用导电膏电连接到基体金属，并且通过基底金属和旋转鼓被设置为接地电位。当静电充电物质接触或接近磁性再现头，端子，导线等产生静电放电时，这抑制流过MR元件的放电电流。包括MR元件等的磁性再现头被防止静电放电损坏。可以提供可以高度有效地防止静电放电损坏的磁性再现头，磁头鼓装置和磁记录重放装置。

8. 发明申请

US20050168884A1 Magnetic tunnel effect type magnetic head, and method of producing same 失效
标题翻译：磁隧道效应型磁头及其制造方法
公开(公告)号：US20050168884A1
公开(公告)日：2005-08-04
申请号：US11091084
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the:magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.
摘要翻译：一种磁隧道效应型磁头，包括形成在第一软磁性导电层上的第一软磁性导电层，该第一软磁性导电层提供下部屏蔽层24，金属氧化物层25和第一非磁性导电层，以提供较低的间隙层26，形成在第一非磁性导电层上以提供磁性隧道结元件27的磁性隧道结层34，形成在磁性隧道结层34上以提供上间隙层28的第二非磁性导电层; 以及形成在第二非磁性导电层上以提供上屏蔽层29的第二软磁导电层，下间隙层26中的金属氧化物层25形成在至少磁性隧道结层27下面。

9. 发明授权

US06704178B2 Multichannel magnetic head using magnetoresistive effect 失效
标题翻译：多通道磁头采用磁阻效应
公开(公告)号：US06704178B2
公开(公告)日：2004-03-09
申请号：US10092911
申请日：2002-03-07
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3909 , G11B5/3948 , G11B5/3967
摘要： A multichannel magnetic head utilizing the magnetoresistive effect comprises a plurality of magnetoresistive effect type reproducing magnetic head elements arrayed between a first and second magnetic shield and electrodes wherein the reproducing magnetic head elements are arrayed in parallel on at least the first magnetic shield and electrode. Electrodes on one side are constructed commonly by the first magnetic shield and led out as a single common terminal decreasing the number of terminals. Therefore, the number of the terminals in the multichannel magnetic head using the magnetoresistive effect can be decreased, the multichannel magnetic head can be miniaturized, the occurrence of a short-circuit between the terminals or between the leads can be removed, the occurrence of fluctuations of element characteristics can be removed, the multichannel magnetic head using the magnetoresistive effect can become highly reliable and a yield of the multichannel magnetic head using the magnetoresistive effect can be improved.
摘要翻译：利用磁阻效应的多通道磁头包括排列在第一和第二磁屏蔽之间的多个磁阻效应型再现磁头元件和电极，其中再生磁头元件至少在第一磁屏蔽和电极上平行排列。一方面的电极通常由第一磁屏蔽构成，并作为单个公共端引出，减少端子数量。因此，可以减少使用磁阻效应的多通道磁头中的端子数量，可以使多通道磁头小型化，能够消除端子之间或引线之间的短路的发生，发生波动可以去除元件特性，使用磁阻效应的多通道磁头可以变得高可靠性，并且可以提高使用磁阻效应的多通道磁头的产量。

10. 发明授权

US06678126B2 Magnetoresistance-effect magnetic head 失效
标题翻译：磁阻效应磁头
公开(公告)号：US06678126B2
公开(公告)日：2004-01-13
申请号：US10046501
申请日：2001-10-19
申请人： Toru Katakura , Takuji Matsuo , Eiji Nakashio , Junichi Sugawara , Seiji Onoe
发明人： Toru Katakura , Takuji Matsuo , Eiji Nakashio , Junichi Sugawara , Seiji Onoe
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3916 , G11B2005/3996
摘要： The part of an MR element 25 which lies close to a medium-facing surface 10a overlaps that part of a flux-guiding element 24 which lies remote from the medium-facing surface 10a, with a second gap film 23b interposed between the elements 24 and 25. Further, the MR element 25 overlaps the flux-guiding element 24 for a distance that falls within a range of 15 to 25% of the length of the MR height of the element 25 as measured in a direction perpendicular to the medium-facing surface 10a.
摘要翻译：靠近中间面10a的MR元件25的部分与远离中介面10a的磁通引导元件24的一部分重叠，第二间隙膜23b置于元件24和此外，MR元件25与磁通引导元件24重叠一段距离，该距离落在元件25的MR高度的长度的15至25％的范围内，在与中间面向垂直的方向上测量表面10a。

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