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    • 7. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07504671B2
    • 2009-03-17
    • US11929492
    • 2007-10-30
    • Sadamu IshiduKenjiro HigakiTakashi IshiiYasushi Tsuzuki
    • Sadamu IshiduKenjiro HigakiTakashi IshiiYasushi Tsuzuki
    • H01L33/00
    • H01L33/642H01L33/46H01L33/62H01L33/641H01L2224/48091H01L2224/49107H01L2924/00014
    • A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.
    • 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体装置100配备有基板2,基板2具有底面2b和位于底面2b的相反侧的元件安装面2a,半导体元件1具有安装在元件上的主表面1a 安装面2a。 在L是主表面1的长度方向上的长度,H是底面2b与元件安装面2a的距离的情况下,H / L的比例为0.3以上。 当半导体元件是发光元件时,元件安装表面2a是空腔2u,元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。 此外,当在主表面1a上设置连接到外部部分的电极32时,在与电极32连接的部分的空腔侧,主表面1a设置有凹槽。 凹槽用于防止电极32的连接构件34向外流动。