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    • 1. 发明申请
    • Systems and methods for forming additional metal routing in semiconductor devices
    • 用于在半导体器件中形成附加金属布线的系统和方法
    • US20070164372A1
    • 2007-07-19
    • US11331951
    • 2006-01-13
    • Terry McDanielJames GreenMark Fischer
    • Terry McDanielJames GreenMark Fischer
    • H01L29/76
    • H01L27/105H01L21/823475H01L21/823871H01L27/1052H01L27/10894H01L27/10897H01L27/11531H01L29/66545
    • Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
    • 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加,这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线,可以在保持半导体器件的尺寸的同时,缓和上金属层的间隔要求。 此外,形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置,从而减小金属触点(例如DRAM存储单元的埋置数字线)的电阻。
    • 2. 发明授权
    • Additional metal routing in semiconductor devices
    • 半导体器件中的附加金属布线
    • US07859112B2
    • 2010-12-28
    • US11331951
    • 2006-01-13
    • Terry McDanielJames GreenMark Fischer
    • Terry McDanielJames GreenMark Fischer
    • H01L23/52
    • H01L27/105H01L21/823475H01L21/823871H01L27/1052H01L27/10894H01L27/10897H01L27/11531H01L29/66545
    • Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
    • 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加,这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线,可以在保持半导体器件的尺寸的同时,缓和上金属层的间隔要求。 此外,形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置,从而减小金属触点(例如DRAM存储单元的埋置数字线)的电阻。
    • 3. 发明申请
    • ADDITIONAL METAL ROUTING IN SEMICONDUCTOR DEVICES
    • 半导体器件中的附加金属布线
    • US20110086470A1
    • 2011-04-14
    • US12972232
    • 2010-12-17
    • Terry McDanielJames GreenMark Fischer
    • Terry McDanielJames GreenMark Fischer
    • H01L21/8229
    • H01L27/105H01L21/823475H01L21/823871H01L27/1052H01L27/10894H01L27/10897H01L27/11531H01L29/66545
    • Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
    • 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加,这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线,可以在保持半导体器件的尺寸的同时,缓和上金属层的间隔要求。 此外,形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置,从而降低金属触点(例如DRAM存储器单元的掩埋数字线)的电阻。
    • 4. 发明授权
    • Additional metal routing in semiconductor devices
    • 半导体器件中的附加金属布线
    • US08674404B2
    • 2014-03-18
    • US12972232
    • 2010-12-17
    • Terry McDanielJames GreenMark Fischer
    • Terry McDanielJames GreenMark Fischer
    • H01L29/66
    • H01L27/105H01L21/823475H01L21/823871H01L27/1052H01L27/10894H01L27/10897H01L27/11531H01L29/66545
    • Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
    • 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加,这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线,可以在保持半导体器件的尺寸的同时,缓和上金属层的间隔要求。 此外,形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置,从而降低金属触点(例如DRAM存储器单元的掩埋数字线)的电阻。
    • 5. 发明申请
    • SELF-SUPPORTING AND LOAD BEARING STRUCTURAL JOINT
    • 自支撑和负载轴承结构接头
    • US20160002910A1
    • 2016-01-07
    • US14855213
    • 2015-09-15
    • James Green
    • James Green
    • E04B1/24E04C3/07
    • E04B1/2403E04B2001/2415E04B2001/2457E04C3/07F16B7/042F16B7/0446F16B7/182
    • In some embodiments the structural joint includes a first structural member having a first mating face at one end of the first structural member, the first mating face having a two dimensional profile, a second structural member having a second mating face at one end of the second structural member and positioned proximate to the first mating face of the first structural member, the second mating face having a two dimensional profile that is similar to the two dimensional profile of the first mating face, a splice plate secured to the first structural member at the first mating face and removably secured to the second structural member at the second mating face, and fasteners that secure the splice plate to the first structural member and removably attach the splice plate to the second structural member.
    • 在一些实施例中,结构接头包括第一结构构件,其在第一结构构件的一端具有第一配合面,第一配合面具有二维轮廓,第二结构构件在第二结构构件的一端具有第二配合面 结构构件并且定位成靠近第一结构构件的第一配合面,第二配合面具有类似于第一配合面的二维轮廓的二维轮廓,在第一配合面处固定到第一结构构件的接合板 第一配合面,并且在第二配合面处可拆卸地固定到第二结构构件;以及紧固件,其将接合板固定到第一结构构件并将接合板可拆卸地附接到第二结构构件。
    • 7. 发明授权
    • Corrosion resistant coatings for aluminum and aluminum alloys
    • 铝和铝合金耐腐蚀涂层
    • US06375726B1
    • 2002-04-23
    • US09702225
    • 2000-10-31
    • Craig MatzdorfMichael KaneJames Green
    • Craig MatzdorfMichael KaneJames Green
    • C23C2205
    • C23C22/83C09D5/084C09D5/12C23C22/34C23C2222/10
    • This invention is for the protection and surface treatment of aluminum, aluminum alloys and coated aluminum substrates against corrosion. The aluminum substrates are treated with an acidic aqueous solution containing small but effective amounts of at least one trivalent chromium salt such as a trivalent chromium sulfate, at least one alkali metal hexafluorazirconate such as potassium hexafluorozirconate in combination with small but effective amounts of at least one water soluble or dispersible thickening agent such as a cellulose compound and at least one water soluble surfactant. The corrosion resistant aluminum substrates of this invention have improved adhesion for overlaying coatings e.g. paints and a lower electrical resistance contact.
    • 本发明是为了保护和表面处理铝,铝合金和涂覆的铝基板免受腐蚀。 铝基材用含有少量但有效量的至少一种三价铬盐如三价铬硫酸盐,至少一种六氟氮酸钾碱金属如六氟锆酸钾的酸性水溶液处理,其结合少量但有效量的至少一种 水溶性或分散性增稠剂如纤维素化合物和至少一种水溶性表面活性剂。 本发明的耐腐蚀铝基材具有改善的覆盖涂层的粘合性,例如 油漆和较低的电阻接触。
    • 8. 发明申请
    • Hybrid Utility Vehicle
    • 混合动力车
    • US20080234096A1
    • 2008-09-25
    • US11662819
    • 2005-09-30
    • Rajesh JoshiJames GreenScott C. BlyAnthony J. Williams
    • Rajesh JoshiJames GreenScott C. BlyAnthony J. Williams
    • B60K6/22
    • B60W10/08B60K6/46B60W2540/28Y02T10/6217Y10T477/23
    • A serial hybrid drive system for off-road utility vehicles and/or riding tractors including one or more electric motors (8, 8a, 8b) for driving the vehicle. The motors are connected to the driven wheels (11), with or without individual gear boxes 9a, 9b) or transmissions, to turn the wheels. The vehicle includes an electric generator (4) connected to the vehicle engine (2) for supplying power to a fast charging battery pack (6), which in turn feeds power to the motors. One or more motors may also be provided for operating accessory implements of the vehicle. These motors and vehicle generator receive operational instructions from one or more controllers (14, 16, 18), which may be programmed to adjust personality settings for the drive system.
    • 一种用于越野多用途车辆和/或骑马拖拉机的串联混合驱动系统,包括用于驱动车辆的一个或多个电动马达(8,8a,8b)。 电机连接到从动轮(11),带有或不带有单独的齿轮箱9a,9bb或变速器,以转动车轮。 车辆包括连接到车辆发动机(2)的发电机(4),用于向快速充电电池组(6)供电,而快速充电电池组又向电动机供电。 还可以提供一个或多个电动机用于操作车辆的附件工具。 这些电动机和车辆发电机接收来自一个或多个控制器(14,16,18)的操作指令,该控制器可被编程为调整驱动系统的个性设置。