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    • 4. 发明申请
    • Preparation method for antibacterial nanocomposite fiber materials containing organic intermediates or free-radical scavengers
    • 含有机中间体或自由基清除剂的抗菌纳米复合纤维材料的制备方法
    • US20090317434A1
    • 2009-12-24
    • US12144667
    • 2008-06-24
    • Te-Hsing WuNini-Chen TsaiLie-Hang ShenBin LinChia-Chieh ChenWuu-Jyh Lin
    • Te-Hsing WuNini-Chen TsaiLie-Hang ShenBin LinChia-Chieh ChenWuu-Jyh Lin
    • A01N25/08A01N59/16A01P1/00
    • A01N59/16A01N25/10A01N25/34A01N2300/00
    • The invention relates to a novel preparation method for antibacterial nano metal composite fiber materials containing organic intermediate or free radical scavengers. The technology for the invention mainly uses γ-ray radiation to a solution mixture containing PAA (polyacrylic acid intermediate) or IPA (Isopropyl alcohol free radical scavenger) and silver nitrate solution to induce crosslinking or grafting on Nylon or PET fiber surface and produce nanocomposite fiber products with excellent antibacterial ability. The main reaction mechanism is through PAA or IPA as additives to assist silver particles in adhering firmly onto Nylon or PET fiber surface. With good thermal stability and chemical stability silver is considered as an excellent inorganic antibacterial agent. It can easily react with enzyme-protein molecules in bacteria and achieve sterilization effect by destructing cell surface and killing the bacteria. The antibacterial testing report indicates Nylon and PET fibers containing nano silver have excellent antibacterial ability. The invented product can be used for functional textiles for medical applications, personal products and manufacturing environment.
    • 本发明涉及一种含有有机中间体或自由基清除剂的抗菌纳米金属复合纤维材料的新型制备方法。 本发明的技术主要使用伽马射线辐射到含有PAA(聚丙烯酸中间体)或IPA(异丙醇自由基清除剂)和硝酸银溶液的溶液混合物,以在尼龙或PET纤维表面诱导交联或接枝,并制备纳米复合纤维 产品具有优良的抗菌能力。 主要反应机理是通过PAA或IPA作为添加剂,以帮助银颗粒牢固地粘附在尼龙或PET纤维表面上。 具有良好的热稳定性和化学稳定性,银被认为是优良的无机抗菌剂。 它可以容易地与细菌中的酶 - 蛋白质分子反应,并通过破坏细胞表面并杀死细菌达到灭菌效果。 抗菌检测报告指出,尼龙和含有纳米银的PET纤维具有优异的抗菌能力。 本发明的产品可用于医疗应用,个人产品和制造环境的功能性纺织品。
    • 10. 发明申请
    • Frame Buffer Pixel Circuit of Liquid Crystal on Silicon Display Device
    • 液晶显示装置上的液晶缓冲像素电路
    • US20130069966A1
    • 2013-03-21
    • US13701009
    • 2011-08-17
    • Bohua ZhaoRan HuangHuan DuJiajun LuoBin Lin
    • Bohua ZhaoRan HuangHuan DuJiajun LuoBin Lin
    • G09G5/00
    • G09G5/001G09G3/3648G09G2300/0819G09G2300/0842G09G2310/0251G09G2320/0233G09G2320/043G09G2360/18G11C19/184
    • The present invention discloses a frame buffer pixel circuit for a LCoS display device, wherein said circuit consists of a first transistor (M1), a second transistor (M2), a third transistor (M3), a fourth transistor (M4), a fifth transistor (M5), a sixth transistor (M6), a storage capacitor (C1) and a pixel capacitor (C2), wherein, the first transistor (M1) forms a pre-charge circuit, the second transistor (M2) and the third transistor (M3) form a threshold voltage generating circuit, the storage capacitor (C1) forms a sample and hold circuit, the fourth transistor (M4), the fifth transistor (M5) and the pixel capacitor (C2) form an input data voltage read-in circuit, and the sixth transistor (M6) forms a discharge circuit. The present invention has a threshold voltage added when writing the input data voltage into the storage capacitor so as to cancel out the threshold voltage lost by reading the voltage on the storage capacitor onto the pixel capacitor, thereby ensuring consistency of the output pixel voltage and improving the display effect.
    • 本发明公开了一种用于LCoS显示装置的帧缓冲像素电路,其中所述电路由第一晶体管(M1),第二晶体管(M2),第三晶体管(M3),第四晶体管(M4),第五晶体管 晶体管(M5),第六晶体管(M6),存储电容器(C1)和像素电容器(C2),其中,第一晶体管(M1)形成预充电电路,第二晶体管(M2) 晶体管(M3)形成阈值电压发生电路,存储电容器(C1)形成采样保持电路,第四晶体管(M4),第五晶体管(M5)和像素电容器(C2)形成输入数据电压读 并且第六晶体管(M6)形成放电电路。 本发明在将输入数据电压写入存储电容器时附加了阈值电压,以通过将存储电容器上的电压读入像素电容器来消除阈值电压损失,从而确保输出像素电压的一致性和改善 显示效果。