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1. 发明授权

US08129287B2 Method for manufacturing semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US08129287B2
公开(公告)日：2012-03-06
申请号：US12139774
申请日：2008-06-16
申请人： Tatsuya Suzuki , Hidemitsu Aoki
发明人： Tatsuya Suzuki , Hidemitsu Aoki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.
摘要翻译：第一氧化膜和第二氧化膜16分别通过热氧化法形成在半导体衬底10的表面上的第一区域13a和第二区域13b中，并且第一氧化物膜被去除，而第二氧化物膜16被形成在其上的抗蚀剂层18覆盖，然后用含有有机溶剂如异丙醇作为主要成分的化学溶液除去抗蚀剂层18。随后，在第一区域13a中形成具有与第二氧化物膜16不同的厚度的第三氧化物膜22。

2. 发明申请

US20060234513A1 Method for manufacturing semiconductor device and semiconductor device 失效
公开(公告)号：US20060234513A1
公开(公告)日：2006-10-19
申请号：US11447962
申请日：2006-06-07
申请人： Tatsuya Suzuki , Hidemitsu Aoki
发明人： Tatsuya Suzuki , Hidemitsu Aoki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.

3. 发明申请

US20080248651A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20080248651A1
公开(公告)日：2008-10-09
申请号：US12139774
申请日：2008-06-16
申请人： Tatsuya Suzuki , Hidemitsu Aoki
发明人： Tatsuya Suzuki , Hidemitsu Aoki
IPC分类号： H01L21/311
CPC分类号： H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.
摘要翻译：第一氧化膜和第二氧化膜16分别通过热氧化法形成在半导体衬底10的表面上的第一区域13a和第二区域13b中，并且除去第一氧化物膜第二氧化膜16被形成在其上的抗蚀剂层18覆盖，然后用含有有机溶剂如异丙醇作为主要成分的化学溶液除去抗蚀剂层18。随后，在第一区域13a中形成具有与第二氧化膜16不同的厚度的第三氧化物膜22。

4. 发明授权

US07368064B2 Cleaning solution and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的清洗液及其制造方法
公开(公告)号：US07368064B2
公开(公告)日：2008-05-06
申请号：US11115275
申请日：2005-04-27
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： B44C1/22
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
摘要翻译：半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去灰化抗蚀图案使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片酸盐为0.1〜3.0质量％。

5. 发明授权

US07087494B2 Method for manufacturing semiconductor device and semiconductor device 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US07087494B2
公开(公告)日：2006-08-08
申请号：US10685571
申请日：2003-10-16
申请人： Tatsuya Suzuki , Hidemitsu Aoki
发明人： Tatsuya Suzuki , Hidemitsu Aoki
IPC分类号： H01L21/336 , H01L21/8236
CPC分类号： H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.
摘要翻译：第一氧化膜和第二氧化膜16分别通过热氧化法形成在半导体衬底10的表面上的第一区域13a和第二区域13b中，并且除去第一氧化物膜第二氧化膜16被形成在其上的抗蚀剂层18覆盖，然后用含有有机溶剂如异丙醇作为主要成分的化学溶液除去抗蚀剂层18。随后，在第一区域13a中形成具有与第二氧化膜16不同的厚度的第三氧化物膜22。

6. 发明授权

US07402530B2 Method for manufacturing semiconductor device and semiconductor device 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US07402530B2
公开(公告)日：2008-07-22
申请号：US11447962
申请日：2006-06-07
申请人： Tatsuya Suzuki , Hidemitsu Aoki
发明人： Tatsuya Suzuki , Hidemitsu Aoki
IPC分类号： H01L21/461 , H01L21/302 , H01L21/336
CPC分类号： H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.
摘要翻译：第一氧化膜和第二氧化膜16分别通过热氧化法形成在半导体衬底10的表面上的第一区域13a和第二区域13b中，并且除去第一氧化物膜第二氧化膜16被形成在其上的抗蚀剂层18覆盖，然后用含有有机溶剂如异丙醇作为主要成分的化学溶液除去抗蚀剂层18。随后，在第一区域13a中形成具有与第二氧化膜16不同的厚度的第三氧化物膜22。

7. 发明申请

US20060081180A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20060081180A1
公开(公告)日：2006-04-20
申请号：US11241996
申请日：2005-10-04
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Yuuji Shimizu
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Yuuji Shimizu
IPC分类号： B05C13/02 , B05C11/00 , H01L21/00
CPC分类号： H01L21/6715 , H01L21/67051 , H01L21/67109
摘要： The invention provides a substrate processing apparatus that offers high processing efficiency in resist removal, cleaning and so on. The substrate processing apparatus includes a substrate mounting table that rotates with a semiconductor substrate retained thereon, a first container that stores a first liquid to be supplied to a surface of the semiconductor substrate, a second container that stores a second liquid to be supplied to the surface of the semiconductor substrate, a mixing unit connecting the first container and the second container, so as to mix the first liquid and the second liquid supplied from the first and the second containers thus to give a mixed solution, and a nozzle connecting the mixing unit so as to supply the mixed solution to the surface of the semiconductor substrate.
摘要翻译：本发明提供一种在抗蚀剂去除，清洗等方面提供高处理效率的基板处理装置。基板处理装置包括：基板保持台，其与保持在其上的半导体基板一起旋转;第一容器，其存储要供给到半导体基板的表面的第一液体;第二容器，其将要供给到第二液体的第二液体半导体衬底的表面，连接第一容器和第二容器的混合单元，以便混合从第一和第二容器供应的第一液体和第二液体，从而得到混合溶液;以及喷嘴，单元，以将混合溶液供应到半导体衬底的表面。

8. 发明申请

US20050236362A1 Cleaning solution and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的清洗液及其制造方法
公开(公告)号：US20050236362A1
公开(公告)日：2005-10-27
申请号：US11115275
申请日：2005-04-27
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： H01L21/3065 , B44C1/22 , C09K13/00 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/32 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
摘要翻译：半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去通过灰化抵抗图案。使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗溶液清洗灰化处理后的晶片酸盐为0.1〜3.0质量％。

9. 发明授权

US07943516B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07943516B2
公开(公告)日：2011-05-17
申请号：US12076688
申请日：2008-03-21
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.
摘要翻译：半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去灰化抗蚀图案使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片酸盐为0.1〜3.0质量％。

10. 发明申请

US20080214002A1 Cleaning solution and manufacturing method for semiconductor device 有权
公开(公告)号：US20080214002A1
公开(公告)日：2008-09-04
申请号：US12076688
申请日：2008-03-21
申请人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
发明人： Hidemitsu Aoki , Tatsuya Suzuki , Takuo Ohwada , Kaoru Ikegami , Norio Ishikawa
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/265 , C11D11/0047 , G03F7/426
摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

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