专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08597424B2 Composition and method for forming an aluminum film 有权
标题翻译：用于形成铝膜的组合物和方法
公开(公告)号：US08597424B2
公开(公告)日：2013-12-03
申请号：US12808843
申请日：2008-12-24
申请人： Tatsuya Sakai , Yasuo Matsuki , Tetsuo Tominaga
发明人： Tatsuya Sakai , Yasuo Matsuki , Tetsuo Tominaga
IPC分类号： C09D185/00 , B32B15/20 , C09D5/00 , C07C211/65 , C07F5/06
CPC分类号： C09D185/00 , B32B15/20 , C07C211/65 , C07F5/069 , C09D5/00 , C23C18/08 , C23C18/10 , C23C18/14
摘要： A composition for forming an aluminum film, comprising a complex represented by the following formula (1) and a complex represented by the following formula (2), the molar ratio of the complex represented by the following formula (1) and the complex represented by the following formula (2) being 40:60 to 85:15: AlH3.NR1R2R3 (1) AlH3.(NR1R2R3)2 (2) (in the above formulas (1) and (2), R1, R2 and R3 are each independently a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or aralkyl group.).
摘要翻译：用于形成铝膜的组合物，其包含由下式（1）表示的络合物和由下式（2）表示的络合物，由下式（1）表示的络合物与由以下式（2）为40:60〜85:15:AlH3NR1R2R3（1）AlH3。（NR1R2R3）2（2）（上式（1）和（2）中，R1，R2和R3分别为独立地为氢原子，烷基，环烷基，烯基，炔基，芳基或芳烷基）。

2. 发明申请

US20110229654A1 COMPOSITION AND METHOD FOR FORMING AN ALUMINUM FILM 有权
标题翻译：用于形成铝膜的组合物和方法
公开(公告)号：US20110229654A1
公开(公告)日：2011-09-22
申请号：US12808843
申请日：2008-12-24
申请人： Tatsuya Sakai , Yasuo Matsuki , Tetsuo Tominaga
发明人： Tatsuya Sakai , Yasuo Matsuki , Tetsuo Tominaga
IPC分类号： C09D1/00 , B05D3/06 , B05D3/02 , B05D7/24
CPC分类号： C09D185/00 , B32B15/20 , C07C211/65 , C07F5/069 , C09D5/00 , C23C18/08 , C23C18/10 , C23C18/14
摘要： A composition for forming an aluminum film, comprising a complex represented by the following formula (1) and a complex represented by the following formula (2), the molar ratio of the complex represented by the following formula (1) and the complex represented by the following formula (2) being 40:60 to 85:15: AlH3.NR1R2R3 (1) AlH3.(NR1R2R3)2 (2) (in the above formulas (1) and (2), R1, R2 and R3 are each independently a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or aralkyl group.).
摘要翻译：用于形成铝膜的组合物，其包含由下式（1）表示的络合物和由下式（2）表示的络合物，由下式（1）表示的络合物与由以下式（2）为40:60〜85:15:AlH3NR1R2R3（1）AlH3。（NR1R2R3）2（2）（上式（1）和（2）中，R1，R2和R3分别为独立地为氢原子，烷基，环烷基，烯基，炔基，芳基或芳烷基）。

3. 发明授权

US07238822B2 Ruthenium compound and process for producing a metal ruthenium film 有权
标题翻译：钌化合物和金属钌膜的制造方法
公开(公告)号：US07238822B2
公开(公告)日：2007-07-03
申请号：US10537484
申请日：2003-09-17
申请人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
发明人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
IPC分类号： C07F17/00 , C23C16/00
CPC分类号： C23C16/18 , C07C51/00
摘要： A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition.The ruthenium compound as a material for chemical vapor deposition is represented by the following formula (1), for example
摘要翻译：可以从其获得高质量的膜状金属钌的钌化合物和通过化学气相沉积从钌化合物制备金属钌膜的方法。作为化学气相沉积材料的钌化合物例如由下式（1）表示

4. 发明授权

US07002033B1 Chemical vapor deposition material and chemical vapor deposition 有权
标题翻译：化学气相沉积材料和化学气相沉积
公开(公告)号：US07002033B1
公开(公告)日：2006-02-21
申请号：US11187982
申请日：2005-07-25
申请人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
发明人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
IPC分类号： C07F15/00 , C23C16/00
CPC分类号： C23C16/18 , C07F15/0053
摘要： A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.
摘要翻译：一种化学气相沉积材料，其包含具有由下式表示的配位体的钌化合物：化学式id =“CHEM-US-00001”num =“000

5. 发明申请

US20060024443A1 CHEMICAL VAPOR DEPOSITION MATERIAL AND CHEMICAL VAPOR DEPOSITION 有权
标题翻译：化学蒸气沉积物和化学气相沉积
公开(公告)号：US20060024443A1
公开(公告)日：2006-02-02
申请号：US11187982
申请日：2005-07-25
申请人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
发明人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
IPC分类号： C07F15/00 , C23C16/00
CPC分类号： C23C16/18 , C07F15/0053
摘要： A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.
摘要翻译：一种化学气相沉积材料，其包含具有由下式表示的配体的钌化合物：其中R 1，R 2和R 3各自为独立地为氢原子，氟原子，三氟甲基或碳原子数为1〜10的烃基，以及通过化学气相沉积从化学气相沉积材料形成钌膜的方法。即使非常薄也可以获得高质量的钌膜。

6. 发明授权

US07718228B2 Composition for forming silicon-cobalt film, silicon-cobalt film and method for forming same 有权
标题翻译：用于形成硅 - 钴膜的组合物，硅 - 钴膜及其形成方法
公开(公告)号：US07718228B2
公开(公告)日：2010-05-18
申请号：US10575478
申请日：2004-10-06
申请人： Yasuo Matsuki , Daohai Wang , Tatsuya Sakai , Haruo Iwasawa
发明人： Yasuo Matsuki , Daohai Wang , Tatsuya Sakai , Haruo Iwasawa
IPC分类号： B05D3/02
CPC分类号： H01L21/28518 , C07F17/02 , C23C18/1204 , C23C18/14
摘要： There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.
摘要翻译：提供了一种低成本的用于形成硅 - 钴膜的组合物和方法，而不需要昂贵的真空设备和高频发生器。该组合物是包含硅化合物和钴化合物的硅 - 钴膜形成组合物。通过将该组合物涂布在基板上并使所得到的基板进行热处理和/或光处理而形成硅 - 钴膜。

7. 发明授权

US07776766B2 Trench filling method 有权
标题翻译：沟槽灌装法
公开(公告)号：US07776766B2
公开(公告)日：2010-08-17
申请号：US11814256
申请日：2006-01-11
申请人： Tatsuya Sakai , Yasuo Matsuki
发明人： Tatsuya Sakai , Yasuo Matsuki
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C18/06 , C23C18/10 , C23C18/14 , H01L21/288 , H01L21/76843 , H01L21/76877
摘要： A trench embedding method comprising the steps of applying a composition for filling trenches which comprises a complex of an amine compound and aluminum hydride and an organic solvent to a substrate having trenches; and heating and/or exposing the composition to light to convert the complex into aluminum in the trenches so as to embed aluminum into the trenches. According to this method, even when aluminum is embedded into trenches having a fine and complex pattern, embedding performance is high and trenches in a large substrate can filled. This method can be carried out at a low cost.
摘要翻译：一种沟槽包埋方法，包括以下步骤：将含有胺化合物和氢化铝和有机溶剂的复合物填充沟槽的组合物施加到具有沟槽的衬底上; 并将组合物加热和/或曝光以将复合体转化成沟槽中的铝，从而将铝嵌入沟槽中。根据该方法，即使将铝嵌入到具有精细和复杂图案的沟槽中，嵌入性能高，并且可以填充大的衬底中的沟槽。该方法可以以低成本进行。

8. 发明申请

US20100029057A1 SILICONE RESIN COMPOSITION AND METHOD OF FORMING A TRENCH ISOLATION 审中-公开
标题翻译：硅树脂组合物和形成隔离层的方法
公开(公告)号：US20100029057A1
公开(公告)日：2010-02-04
申请号：US12442405
申请日：2007-09-21
申请人： Haruo Iwasawa , Tatsuya Sakai , Yasuo Matsuki , Kentaro Tamaki
发明人： Haruo Iwasawa , Tatsuya Sakai , Yasuo Matsuki , Kentaro Tamaki
IPC分类号： H01L21/762 , H01L21/3105 , C01B33/00
CPC分类号： H01L21/3124 , C08G77/06 , C08G77/12 , C08G77/16 , C09D183/04 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/316 , H01L21/76224
摘要： A silicone resin which is represented by the following rational formula (1) and solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k (1) wherein n, m and k are each a number, with the proviso that, when n+m+k=1, n is not less than 0.5, m is more than 0 and not more than 0.95 and k is 0 to 0.2.The silicone resin of the present invention can be advantageously used in a composition for forming a trench isolation having a high aspect ratio.
摘要翻译：由以下合理式（1）表示的有机硅树脂和120℃下的固体：（H2SiO）n（HSiO1.5）m（SiO2）k（1）其中n，m和k各自为数，条件是当n + m + k = 1时，n不小于0.5，m大于0且不大于0.95，k为0至0.2。本发明的有机硅树脂可以有利地用于形成具有高纵横比的沟槽隔离的组合物中。

9. 发明申请

US20090022891A1 METHOD OF FORMING METAL FILM 审中-公开
标题翻译：形成金属膜的方法
公开(公告)号：US20090022891A1
公开(公告)日：2009-01-22
申请号：US12278445
申请日：2006-07-27
申请人： Tatsuya Sakai , Yasuo Matsuki , Kazuo Kawaguchi
发明人： Tatsuya Sakai , Yasuo Matsuki , Kazuo Kawaguchi
IPC分类号： C23C16/06
CPC分类号： C23C16/16 , C23C16/4485 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76873
摘要： A method of forming a metal film, comprising the steps of: sublimating at least one metal compound selected from the group consisting of a cobalt compound, a ruthenium compound and a tungsten compound from a substrate having the above metal compound film formed thereon; and supplying the sublimated gas to a substrate for forming a metal film to decompose the gas, thereby forming a metal film on the surface of the first substrate. A method of forming a metal film which serves as a seed layer when a metal, especially copper is to be filled into the trenches of a substrate as an insulator by plating and as a barrier layer for preventing the migration of metal atoms to an insulating film when the substrate has no barrier layer and has excellent adhesion to the insulator.
摘要翻译：一种形成金属膜的方法，包括以下步骤：从其上形成有上述金属化合物膜的基材升华至少一种选自钴化合物，钌化合物和钨化合物的金属化合物; 并将升华的气体供给到用于形成金属膜的基板以分解气体，从而在第一基板的表面上形成金属膜。当金属，特别是铜通过电镀填充到作为绝缘体的基板的沟槽中时，形成用作种子层的金属膜的方法以及用于防止金属原子迁移到绝缘膜的阻挡层当基板没有阻挡层并且对绝缘体具有优异的粘合性时。

10. 发明申请

US20080194118A1 Trench Filling Method 有权
标题翻译：沟槽灌装方法
公开(公告)号：US20080194118A1
公开(公告)日：2008-08-14
申请号：US11814256
申请日：2006-01-11
申请人： Tatsuya Sakai , Yasuo Matsuki
发明人： Tatsuya Sakai , Yasuo Matsuki
IPC分类号： H01L21/31
CPC分类号： C23C18/06 , C23C18/10 , C23C18/14 , H01L21/288 , H01L21/76843 , H01L21/76877
摘要： A trench embedding method comprising the steps of applying a composition for filling trenches which comprises a complex of an amine compound and aluminum hydride and an organic solvent to a substrate having trenches; and heating and/or exposing the composition to light to convert the complex into aluminum in the trenches so as to embed aluminum into the trenches. According to this method, even when aluminum is embedded into trenches having a fine and complex pattern, embedding performance is high and trenches in a large substrate can filled. This method can be carried out at a low cost.
摘要翻译：一种沟槽包埋方法，包括以下步骤：将含有胺化合物和氢化铝和有机溶剂的复合物填充沟槽的组合物施加到具有沟槽的衬底上; 并将组合物加热和/或曝光以将复合体转化成沟槽中的铝，从而将铝嵌入沟槽中。根据该方法，即使将铝嵌入到具有精细和复杂图案的沟槽中，嵌入性能高，并且可以填充大的衬底中的沟槽。该方法可以以低成本进行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式