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    • 3. 发明授权
    • Method of manufacturing electro-optical device
    • 电光装置的制造方法
    • US07477334B2
    • 2009-01-13
    • US11425569
    • 2006-06-21
    • Minoru MoriwakiMasahiro Yasukawa
    • Minoru MoriwakiMasahiro Yasukawa
    • G02F1/1333
    • H01L29/78621G02F1/133605H01L27/1255
    • A method of manufacturing an electro-optical device, which, on a substrate, has a plurality of data lines, a plurality of scanning lines, a plurality of driving elements formed to correspond to intersections of the plurality of data lines and the plurality of scanning lines for pixels, and a plurality of pixel electrodes provided to correspond to the driving elements, includes forming an etching stopping layer, forming a common line that is provided above the etching stopping layer to short-circuit the plurality of scanning lines and the plurality of scanning lines, forming a first interlayer insulating film that isolates the plurality of data lines and the plurality of pixel electrodes from the plurality of scanning lines and the plurality of driving elements, forming contact holes that electrically connect the plurality of data lines and the plurality of pixel electrodes to the plurality of driving elements, forming the plurality of data lines, and forming a cutting hole in the first interlayer insulating film by etching so as to cut the common line.
    • 一种制造电光装置的方法,其在基板上具有多条数据线,多条扫描线,多条驱动元件,形成为对应于多条数据线与多条扫描线的交点 用于像素的行和与驱动元件对应设置的多个像素电极包括形成蚀刻停止层,形成设置在蚀刻停止层上方的公共线以使多条扫描线短路, 扫描线,形成将多条数据线和多个像素电极与多条扫描线和多个驱动元件隔离的第一层间绝缘膜,形成电连接多条数据线的多个接触孔, 像素电极到多个驱动元件,形成多个数据线,并在第一个中形成切割孔 层间绝缘膜通过蚀刻以切割公共线。
    • 8. 发明申请
    • ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
    • 电光设备和电子设备
    • US20110249227A1
    • 2011-10-13
    • US13083933
    • 2011-04-11
    • Minoru MoriwakiHiroaki Mochizuki
    • Minoru MoriwakiHiroaki Mochizuki
    • G02F1/1343
    • G02F1/136213G02F1/136227G02F1/136286
    • In at least one embodiment of the disclosure, an electro-optical device comprises a pixel electrode and a transistor corresponding to the pixel electrode. A data line is electrically connected to the transistor. A storage capacitor is provided between the pixel electrode and the transistor. The storage capacitor has a first capacitance electrode and a second capacitance electrode facing each other. A capacitance isolation film is interposed therebetween. An additional capacitor is electrically connected to the data line. The additional capacitor has a first additional capacitance electrode and a second additional capacitance electrode facing each other. An additional capacitance isolation film is interposed therebetween. The first additional capacitance electrode is provided on a same layer as the first capacitance electrode. The second additional capacitance electrode is provided on a layer different from the layers of the first and second capacitance electrodes.
    • 在本公开的至少一个实施例中,电光装置包括像素电极和对应于像素电极的晶体管。 数据线电连接到晶体管。 在像素电极和晶体管之间提供存储电容器。 存储电容器具有彼此面对的第一电容电极和第二电容电极。 插入电容隔离膜。 附加的电容器电连接到数据线。 附加电容器具有彼此面对的第一附加电容电极和第二附加电容电极。 在其间插入附加的电容隔离膜。 第一附加电容电极设置在与第一电容电极相同的层上。 第二附加电容电极设置在与第一和第二电容电极的层不同的层上。
    • 9. 发明授权
    • Electro-optic device, method for manufacturing the same, and electronic apparatus
    • 电光装置及其制造方法以及电子装置
    • US07605024B2
    • 2009-10-20
    • US11612231
    • 2006-12-18
    • Minoru Moriwaki
    • Minoru Moriwaki
    • H01L21/00
    • H01L29/78633H01L27/124
    • An electro-optic device includes data lines and scanning lines extending to cross each other on a substrate, pixel electrodes disposed on the substrate for respective pixels defined corresponding to the data lines and the scanning lines in a plan view of the substrate, thin film transistors electrically connected to the respective pixel electrodes, and at least one amorphous wiring including an amorphous film and disposed in a region containing a region opposite to a channel region of each of the thin film transistors in a plan view of the substrate and in a layer different from that of semiconductor films of the thin film transistors.
    • 电光装置包括数据线和在衬底上彼此交叉的扫描线,在衬底上设置的像素电极,用于在衬底的平面图中对应于数据线和扫描线定义的各个像素,薄膜晶体管 电连接到各个像素电极,以及至少一个包括非晶膜的非晶布线,并且在基板的平面图中设置在包含与每个薄膜晶体管的沟道区域相反的区域的区域中,并且在不同的层 与薄膜晶体管的半导体膜的厚度。