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    • 1. 发明申请
    • ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
    • 电光设备和电子设备
    • US20110249227A1
    • 2011-10-13
    • US13083933
    • 2011-04-11
    • Minoru MoriwakiHiroaki Mochizuki
    • Minoru MoriwakiHiroaki Mochizuki
    • G02F1/1343
    • G02F1/136213G02F1/136227G02F1/136286
    • In at least one embodiment of the disclosure, an electro-optical device comprises a pixel electrode and a transistor corresponding to the pixel electrode. A data line is electrically connected to the transistor. A storage capacitor is provided between the pixel electrode and the transistor. The storage capacitor has a first capacitance electrode and a second capacitance electrode facing each other. A capacitance isolation film is interposed therebetween. An additional capacitor is electrically connected to the data line. The additional capacitor has a first additional capacitance electrode and a second additional capacitance electrode facing each other. An additional capacitance isolation film is interposed therebetween. The first additional capacitance electrode is provided on a same layer as the first capacitance electrode. The second additional capacitance electrode is provided on a layer different from the layers of the first and second capacitance electrodes.
    • 在本公开的至少一个实施例中,电光装置包括像素电极和对应于像素电极的晶体管。 数据线电连接到晶体管。 在像素电极和晶体管之间提供存储电容器。 存储电容器具有彼此面对的第一电容电极和第二电容电极。 插入电容隔离膜。 附加的电容器电连接到数据线。 附加电容器具有彼此面对的第一附加电容电极和第二附加电容电极。 在其间插入附加的电容隔离膜。 第一附加电容电极设置在与第一电容电极相同的层上。 第二附加电容电极设置在与第一和第二电容电极的层不同的层上。
    • 2. 发明授权
    • Electro-optical device and electronic apparatus
    • 电光装置和电子设备
    • US09213207B2
    • 2015-12-15
    • US13083933
    • 2011-04-11
    • Minoru MoriwakiHiroaki Mochizuki
    • Minoru MoriwakiHiroaki Mochizuki
    • G02F1/1343G02F1/1362
    • G02F1/136213G02F1/136227G02F1/136286
    • In at least one embodiment of the disclosure, an electro-optical device comprises a pixel electrode and a transistor corresponding to the pixel electrode. A data line is electrically connected to the transistor. A storage capacitor is provided between the pixel electrode and the transistor. The storage capacitor has a first capacitance electrode and a second capacitance electrode facing each other. A capacitance isolation film is interposed therebetween. An additional capacitor is electrically connected to the data line. The additional capacitor has a first additional capacitance electrode and a second additional capacitance electrode facing each other. An additional capacitance isolation film is interposed therebetween. The first additional capacitance electrode is provided on a same layer as the first capacitance electrode. The second additional capacitance electrode is provided on a layer different from the layers of the first and second capacitance electrodes.
    • 在本公开的至少一个实施例中,电光装置包括像素电极和对应于像素电极的晶体管。 数据线电连接到晶体管。 在像素电极和晶体管之间提供存储电容器。 存储电容器具有彼此面对的第一电容电极和第二电容电极。 插入电容隔离膜。 附加的电容器电连接到数据线。 附加电容器具有彼此面对的第一附加电容电极和第二附加电容电极。 在其间插入附加的电容隔离膜。 第一附加电容电极设置在与第一电容电极相同的层上。 第二附加电容电极设置在与第一和第二电容电极的层不同的层上。
    • 4. 发明授权
    • Electro-optic device, method for manufacturing the same, and electronic apparatus
    • 电光装置及其制造方法以及电子装置
    • US07605024B2
    • 2009-10-20
    • US11612231
    • 2006-12-18
    • Minoru Moriwaki
    • Minoru Moriwaki
    • H01L21/00
    • H01L29/78633H01L27/124
    • An electro-optic device includes data lines and scanning lines extending to cross each other on a substrate, pixel electrodes disposed on the substrate for respective pixels defined corresponding to the data lines and the scanning lines in a plan view of the substrate, thin film transistors electrically connected to the respective pixel electrodes, and at least one amorphous wiring including an amorphous film and disposed in a region containing a region opposite to a channel region of each of the thin film transistors in a plan view of the substrate and in a layer different from that of semiconductor films of the thin film transistors.
    • 电光装置包括数据线和在衬底上彼此交叉的扫描线,在衬底上设置的像素电极,用于在衬底的平面图中对应于数据线和扫描线定义的各个像素,薄膜晶体管 电连接到各个像素电极,以及至少一个包括非晶膜的非晶布线,并且在基板的平面图中设置在包含与每个薄膜晶体管的沟道区域相反的区域的区域中,并且在不同的层 与薄膜晶体管的半导体膜的厚度。
    • 10. 发明申请
    • Information transfer apparatus and information transfer method
    • 信息传递装置和信息传递方法
    • US20070255864A1
    • 2007-11-01
    • US11705717
    • 2007-02-14
    • Minoru Moriwaki
    • Minoru Moriwaki
    • G06F13/28
    • G06F13/28H04N21/42692
    • According to one embodiment, an information transfer apparatus for performing direct memory access (DMA) between a memory unit and an input/output device comprises a first port to form a first transfer path which performs DMA transfer of information between the memory and the input/output device via a general-purpose bus, a second port to form a second transfer path which directly performs DMA transfer of information between the memory unit and the input/output device no via the general-purpose bus, and a selecting unit to select the first transfer path and the second transfer path on the basis of control from the outside.
    • 根据一个实施例,用于在存储器单元和输入/输出设备之间执行直接存储器访问(DMA)的信息传送设备包括:第一端口,用于形成在存储器和输入/输出设备之间执行信息DMA传输的第一传送路径; 输出设备,第二端口,以形成第二传送路径,其直接通过通用总线在存储器单元和输入/输出设备之间直接执行信息的DMA传送;以及选择单元,用于选择 基于来自外部的控制的第一传送路径和第二传送路径。