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1. 发明授权

US08669556B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08669556B2
公开(公告)日：2014-03-11
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

2. 发明授权

US08900362B2 Manufacturing method of gallium oxide single crystal 有权
标题翻译：氧化镓单晶的制造方法
公开(公告)号：US08900362B2
公开(公告)日：2014-12-02
申请号：US13042691
申请日：2011-03-08
申请人： Akiharu Miyanaga , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
发明人： Akiharu Miyanaga , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
IPC分类号： C30B23/04 , C30B1/04 , C30B29/16
CPC分类号： C30B1/04 , C30B29/16
摘要： A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.
摘要翻译：提供了在比氧化镓的熔点（1900℃）低的温度下生长氧化镓单晶的方法。含有Ga原子，O原子，容易升华的原子或分子的化合物膜（以下称为“氧化镓化合物膜”）被加热，使从氧化镓化合物膜内部容易升华的原子或分子升华，由此以比氧化镓的结合能低的热能生长单晶的氧化镓。

3. 发明授权

US08703531B2 Manufacturing method of oxide semiconductor film and manufacturing method of transistor 有权
标题翻译：氧化物半导体膜的制造方法和晶体管的制造方法
公开(公告)号：US08703531B2
公开(公告)日：2014-04-22
申请号：US13034725
申请日：2011-02-25
申请人： Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
发明人： Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
IPC分类号： H01L21/84
CPC分类号： H01L21/02631 , H01L21/0237 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02667 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.
摘要翻译：目的在于提供具有高结晶度的氧化物半导体膜的制造方法。另一个目的是提供具有高场效应迁移率的晶体管的制造方法。在氧化物半导体膜的制造方法中，在不含氧的气氛中的基板上形成氧化物半导体膜，然后通过在含氧气氛中的热处理使氧化物半导体膜结晶化。

4. 发明申请

US20120112184A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120112184A1
公开(公告)日：2012-05-10
申请号：US13285385
申请日：2011-10-31
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takatsugu Omata , Tatsuya Honda , Akiharu Miyanaga , Hiroki Ohara
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takatsugu Omata , Tatsuya Honda , Akiharu Miyanaga , Hiroki Ohara
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L27/1225 , H01L27/124 , H01L29/263 , H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/78618 , H01L29/78621 , H01L29/7869
摘要： A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.
摘要翻译：提供具有新颖结构的半导体器件或半导体器件的制造方法。例如，提高了以高电压或大电流驱动的晶体管的可靠性。为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面（或源电极层），从而缓冲层能够缓和电场的集中。缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。

5. 发明授权

US08569754B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08569754B2
公开(公告)日：2013-10-29
申请号：US13285385
申请日：2011-10-31
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takatsugu Omata , Tatsuya Honda , Akiharu Miyanaga , Hiroki Ohara
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takatsugu Omata , Tatsuya Honda , Akiharu Miyanaga , Hiroki Ohara
IPC分类号： H01L29/12
CPC分类号： H01L29/78693 , H01L27/1225 , H01L27/124 , H01L29/263 , H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/78618 , H01L29/78621 , H01L29/7869
摘要： A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.
摘要翻译：提供具有新颖结构的半导体器件或半导体器件的制造方法。例如，提高了以高电压或大电流驱动的晶体管的可靠性。为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面（或源电极层），从而缓冲层能够缓和电场的集中。缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。

6. 发明申请

US20120097942A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120097942A1
公开(公告)日：2012-04-26
申请号：US13274512
申请日：2011-10-17
申请人： Yuki Imoto , Tetsunori Maruyama , Takatsugu Omata , Yusuke Nonaka , Tatsuya Honda , Akiharu Miyanaga
发明人： Yuki Imoto , Tetsunori Maruyama , Takatsugu Omata , Yusuke Nonaka , Tatsuya Honda , Akiharu Miyanaga
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/4908
摘要： It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.
摘要翻译：本发明的一个实施例的目的是减少包括氧化物半导体的晶体管中的源极和漏极之间的漏电流。作为与栅极绝缘膜接触的第一栅极膜，使用包含铟和氮并且其带隙小于2.8eV的复合导体。由于该复合导体具有大于或等于5eV，优选大于或等于5.5eV的功函数，所以氧化物半导体膜中的电子浓度可以保持极低。结果，源极和漏极之间的漏电流减小。

7. 发明授权

US08987728B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08987728B2
公开(公告)日：2015-03-24
申请号：US13420987
申请日：2012-03-15
申请人： Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
发明人： Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
IPC分类号： H01L29/786 , H01L21/36 , H01L29/423 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/0214 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02565 , H01L21/44 , H01L21/47573 , H01L21/477 , H01L29/045 , H01L29/24 , H01L29/42384 , H01L29/66742 , H01L29/78603 , H01L29/7869
摘要： An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
摘要翻译：目的是通过使用具有稳定电特性的氧化物半导体膜来提供具有稳定电特性的高度可靠的半导体器件。另一个目的是通过使用具有高结晶度的氧化物半导体膜来提供具有较高迁移率的半导体器件。结晶氧化物半导体膜形成在表面粗糙度减小的绝缘膜上并与其接触，由此氧化物半导体膜可以具有稳定的电特性。因此，可以提供具有稳定电特性的高度可靠的半导体器件。此外，可以提供具有较高移动性的半导体器件。

8. 发明授权

US08546892B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08546892B2
公开(公告)日：2013-10-01
申请号：US13274512
申请日：2011-10-17
申请人： Yuki Imoto , Tetsunori Maruyama , Takatsugu Omata , Yusuke Nonaka , Tatsuya Honda , Akiharu Miyanaga
发明人： Yuki Imoto , Tetsunori Maruyama , Takatsugu Omata , Yusuke Nonaka , Tatsuya Honda , Akiharu Miyanaga
IPC分类号： H01L21/70
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/4908
摘要： It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.
摘要翻译：本发明的一个实施例的目的是减少包括氧化物半导体的晶体管中的源极和漏极之间的漏电流。作为与栅极绝缘膜接触的第一栅极膜，使用包含铟和氮并且其带隙小于2.8eV的复合导体。由于该复合导体具有大于或等于5eV，优选大于或等于5.5eV的功函数，所以氧化物半导体膜中的电子浓度可以保持极低。结果，源极和漏极之间的漏电流减小。

9. 发明授权

US08901552B2 Top gate thin film transistor with multiple oxide semiconductor layers 有权
标题翻译：具有多个氧化物半导体层的顶栅薄膜晶体管
公开(公告)号：US08901552B2
公开(公告)日：2014-12-02
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L21/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

10. 发明授权

US08429667B2 Storage system and method for controlling the same 有权
标题翻译：存储系统及其控制方法
公开(公告)号：US08429667B2
公开(公告)日：2013-04-23
申请号：US13407995
申请日：2012-02-29
申请人： Junji Ogawa , Yusuke Nonaka , Yuko Matsui
发明人： Junji Ogawa , Yusuke Nonaka , Yuko Matsui
IPC分类号： G06F9/46 , G06F15/00
CPC分类号： G06F3/0689 , G06F3/061 , G06F3/0631 , G06F3/0647 , G06F3/0658 , G06F9/5083
摘要： Optimum load distribution processing is selected and executed based on settings made by a user in consideration of load changes caused by load distribution in a plurality of asymmetric cores, by using: a controller having a plurality of cores, and configured to extract, for each LU, a pattern showing the relationship between a core having an LU ownership and a candidate core as an LU ownership change destination based on LU ownership management information; to measure, for each LU, the usage of a plurality of resources; to predicate, for each LU based on the measurement results, a change in the usage of the plurality of resources and overhead to be generated by transfer processing itself; to select, based on the respective prediction results, a pattern that matches the user's setting information; and to transfer the LU ownership to the core belonging to the selected pattern.
摘要翻译：基于由多个不对称核心中的负载分布引起的负载变化，由用户进行的设定，选择并执行最佳负载分配处理，所述控制器具有多个核心，并且被配置为针对每个LU 基于LU所有权管理信息，示出具有LU所有权的核心和候选核心作为LU所有权更改目的地之间的关系的模式; 为每个LU测量多个资源的使用; 根据测量结果对每个LU进行谓词，改变多个资源的使用和由传输处理本身产生的开销; 基于相应的预测结果来选择与用户的设置信息匹配的模式; 并将LU所有权转移到属于所选模式的核心。

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