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1. 发明授权

US5264038A Chemical vapor deposition system 失效
标题翻译：化学气相沉积系统
公开(公告)号：US5264038A
公开(公告)日：1993-11-23
申请号：US567224
申请日：1990-08-14
申请人： Tatsushi Hara , Nobuhiro Misawa , Toshiya Suzuki , Takayuki Ohba , Fumitake Mieno , Akio Yamaguchi
发明人： Tatsushi Hara , Nobuhiro Misawa , Toshiya Suzuki , Takayuki Ohba , Fumitake Mieno , Akio Yamaguchi
IPC分类号： C23C16/44 , C23C16/04 , C23C16/448 , C23C16/455 , H01L21/205 , H01L21/28 , H01L21/285 , C23C16/46
CPC分类号： C23C16/45517 , C23C16/04 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition (CVD) system for depositing a material selectively on a part of a substrate comprises a reaction chamber in which a CVD process is performed, a substrate holder and substrate heater provided within the reaction chamber, a gas inlet fixture provided on the reaction chamber for introducing one or more CVD source gases into the reaction chamber, and a reactant distribution fixture provided on the gas inlet fixture within the reaction chamber for controlling distribution of the reactant species in the reaction chamber, wherein the reactant distribution fixture defines a subspace surrounding the substrate within the space of the reaction chamber such that the subspace has a dimension, measured in a direction generally perpendicular to the surface of the substrate such that the dimension is at least less than one half of the mean free path of the reactant species realized inside the space of the reaction chamber during the CVD process and such that an opening is formed for communicating the subspace inside the reaction distribution means with the rest of the space of the reaction chamber for freely passing product species formed as a result of the chemical reaction at the surface of the substrate.

2. 发明授权

US5066612A Method of forming wiring of a semiconductor device 失效
标题翻译：形成半导体器件布线的方法
公开(公告)号：US5066612A
公开(公告)日：1991-11-19
申请号：US637152
申请日：1991-01-03
申请人： Takayuki Ohba , Shinji Miyagaki , Tatsushi Hara , Kenji Morishita , Seiichi Suzuki , Seigen Ri
发明人： Takayuki Ohba , Shinji Miyagaki , Tatsushi Hara , Kenji Morishita , Seiichi Suzuki , Seigen Ri
IPC分类号： H01L21/768 , H01L23/485 , H01L21/44 , H01L21/48
CPC分类号： H01L23/485 , H01L21/76879 , H01L2924/0002
摘要： In the course of a production of a semiconductor device with a multilayer insulating layer, when a contact hole is opened in the multilayer insulating layer, an insulating layer activating a metal selective vapor-growth appears at the side wall of the contact hole. A thin metal (e.g., tungsten) layer is selectively deposited in the contact hole. In another case, another metal layer appears within the contact hole. An insulating film preventing a metal selective vapor-growth is deposited over the whole surface of the side wall of the contact hole, the metal layer and a top surface of the multilayer insulating layer, and is anisotropically etched to leave a portion of the film lying on the side wall only as a side wall insulating film. The contact hole is completely filled with another metal (tungsten) by a selective vapor-growth method, to flatten an exposed surface, and then a conductor (e.g., aluminum) line layer is formed on the metal layer in the contact hole and the multilayer insulating layer, to thereby complete the wiring structure of the semiconductor device.
摘要翻译：在制造具有多层绝缘层的半导体器件的过程中，当多层绝缘层中的接触孔开放时，在接触孔的侧壁处出现激活金属选择性气相生长的绝缘层。在接触孔中选择性地沉积薄金属（例如钨）层。在另一种情况下，另一金属层出现在接触孔内。防止金属选择性气相生长的绝缘膜沉积在接触孔的侧壁，金属层和多层绝缘层的顶表面的整个表面上，并被各向异性地蚀刻以使膜的一部分位于在侧壁上仅作为侧壁绝缘膜。接触孔通过选择性气相生长法完全填充另一种金属（钨），使露出的表面变平，然后在接触孔中的金属层上形成导体（例如，铝）线层，多层绝缘层，从而完成半导体器件的布线结构。

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