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    • 3. 发明授权
    • Calibration method for acceleration sensor in storage device and storage device
    • 存储设备和存储设备中加速度传感器的校准方法
    • US06295507B1
    • 2001-09-25
    • US09389730
    • 1999-09-03
    • Tatsuro SasamotoKoichi AikawaSusumu YoshidaAkihide Jinzenji
    • Tatsuro SasamotoKoichi AikawaSusumu YoshidaAkihide Jinzenji
    • G11B5596
    • G11B5/596G11B5/5521
    • Disclosed is a calibration method for an acceleration sensor in a storage device for calibrating and a storage device, an enclosure for calibrating the acceleration sensor for compensating a vibration of an enclosure in a state of its being mounted in a storage drive. The calibration method and mode comprises a step of exciting a actuator of the drive by flowing a drive current having a predetermined current value, a step of calculating the acceleration of the enclosure of the drive from the predetermined current value and a mechanical transfer function of the storage device, a step of detecting a measured value of the acceleration sensor, and a step of calculating a sensitivity of the acceleration sensor from the calculated acceleration and from the detected measured value. The acceleration sensor is calibrated in the state of its being mounted in the disk drive, and hence the sensitivity can be precisely calibrated.
    • 公开了一种用于校准的存储装置中的加速度传感器和存储装置的校准方法,用于校准加速度传感器的外壳,用于在其安装在存储驱动器中的状态下补偿外壳的振动。 校正方法和模式包括通过流动具有预定电流值的驱动电流来激励驱动器的致动器的步骤,从预定电流值计算驱动器的外壳的加速度的步骤和 存储装置,检测加速度传感器的测量值的步骤,以及根据所计算的加速度和检测到的测量值来计算加速度传感器的灵敏度的步骤。 加速度传感器在安装在磁盘驱动器中的状态下进行校准,因此灵敏度可以精确校准。
    • 8. 发明授权
    • Magnetic sensor formed of magnetoresistance effect elements
    • 磁传感器由磁阻效应元件形成
    • US07589528B2
    • 2009-09-15
    • US11682841
    • 2007-03-06
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • G01R33/02
    • B82Y25/00B82Y40/00G01R33/09G01R33/093H01F41/302Y10T29/49002Y10T29/49037Y10T428/32
    • On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
    • 在单个芯片上形成有多个磁阻效应元件,该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层,以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后,去除磁场。结果,通过磁场施加磁性层的剩余磁化,所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层,由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。