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1. 发明授权

US5330968A Laser ablation process for preparing oxide superconducting thin films 失效
标题翻译：用于制备氧化物超导薄膜的激光烧蚀工艺
公开(公告)号：US5330968A
公开(公告)日：1994-07-19
申请号：US897668
申请日：1992-06-12
申请人： Tatsuoki Nagaishi , Nobuhiro Ota , Naoji Fujimori
发明人： Tatsuoki Nagaishi , Nobuhiro Ota , Naoji Fujimori
IPC分类号： C23C14/08 , C23C14/06 , C23C14/24 , C23C14/28 , C30B29/22 , H01B12/06 , H01L39/24 , B05D3/06
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： A laser ablation process for preparing an oxide superconducting thin film characterized in that an electrode is arranged between a substrate and a target. While the film is formed by laser ablation, a bias voltage of 75-100 V is applied between the electrode and the target.
摘要翻译：一种用于制备氧化物超导薄膜的激光烧蚀工艺，其特征在于电极布置在基板和靶之间。当薄膜由激光烧蚀形成时，在电极和靶之间施加75-100V的偏置电压。

2. 发明授权

US5264412A Laser ablation method for forming oxide superconducting thin films using a homogenized laser beam 失效
标题翻译：使用均质化激光束形成氧化物超导薄膜的激光烧蚀方法
公开(公告)号：US5264412A
公开(公告)日：1993-11-23
申请号：US743621
申请日：1991-08-12
申请人： Nobuhiro Ota , Tatsuoki Nagaishi , Naoji Fujimori
发明人： Nobuhiro Ota , Tatsuoki Nagaishi , Naoji Fujimori
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C23C14/28 , C30B29/22 , H01B12/00 , H01B13/00 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： A method is provided for forming a thin film of an oxide superconductor on a substrate by laser ablation. Energy distribution in the section of a laser beam is homogenized within 10%. The homogenized laser beam is applied onto a target. A thin high-quality film of material ablated from the target is thus formed on a substrate which is arranged to face the target.

3. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

4. 发明授权

US5657365A X-ray generation apparatus 失效
标题翻译： X射线发生装置
公开(公告)号：US5657365A
公开(公告)日：1997-08-12
申请号：US515096
申请日：1995-08-14
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
IPC分类号： G21K5/08 , H01J35/08 , H05G1/00 , H05G1/02
CPC分类号： H01J35/08 , H01J2235/087 , H01J2235/122 , H01J2235/1262
摘要： An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target of generating X-ray by irradiation of electron. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.
摘要翻译： X射线产生装置具有抗热阴极，其包括高导热性基板和通过电子照射产生X射线的靶。目标穿透高导热基板。获得了改善的抗阴茎的冷却效率和耐久性，并且实现了X射线产生装置的小型化和简化。

5. 发明授权

US5450434A Method to work cubic boron nitride article 失效
标题翻译：立方氮化硼制品的加工方法
公开(公告)号：US5450434A
公开(公告)日：1995-09-12
申请号：US66243
申请日：1993-05-25
申请人： Nobuhiro Ota , Naoji Fujimori
发明人： Nobuhiro Ota , Naoji Fujimori
IPC分类号： B23K26/00 , B23K26/06 , B23K26/40 , C01B21/064 , C04B41/00 , C04B41/80 , H01S3/225
CPC分类号： C04B41/009 , B23K26/40 , C04B41/0036 , C04B41/80 , B23K2203/52
摘要： The present invention provides a method for cutting or smoothing an article containing cubic boron nitride. In particular, the method comprises the step of irradiating a beam having a wavelength of not longer than 360 nm to the cubic boron nitride article so that the article is cut or smoothed quickly and with high accuracy.
摘要翻译：本发明提供一种用于切割或平滑含有立方氮化硼的制品的方法。特别地，该方法包括将立方氮化硼制品的波长不大于360nm的光束照射的步骤，使得物品能够快速且准确地切割或平滑。

6. 发明授权

US5878110A X-ray generation apparatus 失效
标题翻译： X射线发生装置
公开(公告)号：US5878110A
公开(公告)日：1999-03-02
申请号：US907883
申请日：1997-08-11
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
IPC分类号： H01J35/08 , H05G1/00
CPC分类号： H01J35/08 , H01J2235/087 , H01J2235/122 , H01J2235/1262
摘要： An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target for generating X-rays by irradiation with electrons. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.
摘要翻译： X射线产生装置具有抗热阴极，其包括高导热性基板和通过照射电子而产生X射线的靶。目标穿透高导热基板。获得了改善的抗阴茎的冷却效率和耐久性，并且实现了X射线产生装置的小型化和简化。

7. 发明授权

US5391409A Low temperature method for synthesizing diamond with high quality by vapor phase deposition 失效
标题翻译：通过气相沉积合成高品质金刚石的低温方法
公开(公告)号：US5391409A
公开(公告)日：1995-02-21
申请号：US861540
申请日：1992-04-01
申请人： Takayuki Shibata , Nobuhiro Ota , Naoji Fujimori
发明人： Takayuki Shibata , Nobuhiro Ota , Naoji Fujimori
IPC分类号： C30B25/16 , C23C16/27 , C30B25/10 , C30B29/04 , B05D3/06 , C23C16/26
CPC分类号： C23C16/274 , C23C16/278 , C30B25/105 , Y10S427/106
摘要： A diamond film deposited on a substrate heated at less than 400.degree. C. in vapor phase from material gas including hydrogen gas and hydrocarbon gas often incurs low strength, low abrasion resistance, and opacity owing to high concentration of non-diamond ingredients. The inventors have discovered that inclusion of nitrogen gas in material gas is likely to raise the concentration of non-diamond ingredients. Good diamond film of good quality shall be obtained by synthesizing from the material gas in which the nitrogen concentration is less than 1000 ppm. The smaller the nitrogen concentration is suppressed, the higher the quality of diamond rises.
摘要翻译：由于高浓度的非金刚石成分，沉积在包含氢气和碳氢化合物气体的材料气体中在气相中加热到低于400℃的基体上的金刚石膜通常会产生低强度，低耐磨性和不透明度。发明人已经发现，在原料气体中包含氮气有可能提高非金刚石成分的浓度。通过从氮浓度小于1000ppm的原料气体合成，可获得质量好的金刚石薄膜。氮浓度越低，钻石质量越高。

8. 发明授权

US5074245A Diamond synthesizing apparatus 失效
标题翻译：金刚石合成装置
公开(公告)号：US5074245A
公开(公告)日：1991-12-24
申请号：US584911
申请日：1990-09-18
申请人： Nobuhiro Ota , Naoji Fujimori
发明人： Nobuhiro Ota , Naoji Fujimori
IPC分类号： C23C16/27 , C23C16/511
CPC分类号： C23C16/511 , C23C16/27
摘要： A diamond synthesizing apparatus has a reaction tube for internally causing a reaction for vapor-phase synthesizing diamond. A plasma generator produces the required microwave plasma in the reaction tube. The reaction tube is coupled with a gas reservoir, which forms a circulation system with the reaction tube. The circulation system is connectable to an exhaust for evacuating its interior. This circulation system further includes a pump for circulating raw material gas, which is a compound containing carbon. A raw material gas supply is also connectable to the circulation system, for intermittently supplying the raw material gas into the circulation system. During the synthesizing operation the circulation system is completely closed. According to this diamond synthesizing apparatus, it is possible to keep pressure fluctuations and composition fluctuations following a reaction and gas addition, to the minimum and to vapor-phase synthesize diamond in very restricted ranges of gas composition and pressure. Further, the consumption of the raw material gas is substantially reduced and the gas concentration in the reaction tube changes only very slowly and smoothly in gas supply, thus, an adverse influence caused by changes in the gas concentration on the film quality, is substantially eliminated.

9. 发明授权

US5785754A Substrate, semiconductor device, element-mounted device and preparation of substrate 失效
标题翻译：基板，半导体器件，元件安装器件和衬底的制备
公开(公告)号：US5785754A
公开(公告)日：1998-07-28
申请号：US565593
申请日：1995-11-30
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Katsuko Harano , Nobuhiro Ota , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Katsuko Harano , Nobuhiro Ota , Naoji Fujimori
IPC分类号： G21K1/10 , H01J35/18 , H01L23/373 , H01L23/473 , H01S5/02 , H01S5/024 , H05H7/00 , C30B29/05
CPC分类号： H01J35/18 , G21K1/10 , H01L23/3732 , H01L23/473 , H05H7/00 , G21K2201/065 , H01J2235/122 , H01J2235/1262 , H01L2924/0002 , H01S5/02423 , H01S5/02492
摘要： A substrate, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property.
摘要翻译：具有热传导率为至少10W / cm×KK并且在高导热性材料层上或其中具有冷却介质流动路径的高导热性材料层的基板具有高的散热性能。

10. 发明授权

US5483038A Method of working diamond with ultraviolet light 失效
标题翻译：用紫外线加工金刚石的方法
公开(公告)号：US5483038A
公开(公告)日：1996-01-09
申请号：US50639
申请日：1993-04-22
申请人： Nobuhiro Ota , Katsuko Harano , Naoji Fujimori
发明人： Nobuhiro Ota , Katsuko Harano , Naoji Fujimori
IPC分类号： B01J19/12 , B23K26/00 , B28D1/22 , B28D5/00 , C04B41/00 , C04B41/80 , C30B29/04 , C30B33/00 , B23K26/06
CPC分类号： B23K26/0075 , B28D1/221 , C04B41/0045 , C04B41/009 , C04B41/80
摘要： Diamond is subjected to working such as smoothing or cutting by irradiation of light having a wavelength in the range of 190 nm to 360 nm to the surface of the diamond. The energy density of the incident light, the divergent angle of the light beam and the half-width of spectrum of the light are specified. The light beam is converged by a cylindrical lens. Moreover, the working is conducted in a specified material, whereby the flatness of the worked face and the working speed are improved.
摘要翻译：通过将波长在190nm至360nm的波长的光照射到金刚石的表面，对金刚石进行平滑化或切割等工作。规定入射光的能量密度，光束的发散角和光的光谱的半宽度。光束由柱面透镜会聚。此外，以特定材料进行加工，从而提高加工面的平坦度和加工速度。

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