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1. 发明授权

US08574446B2 Apparatus and method for plasma processing 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08574446B2
公开(公告)日：2013-11-05
申请号：US12536137
申请日：2009-08-05
申请人： Tamotsu Morimoto , Takahiro Murakami
发明人： Tamotsu Morimoto , Takahiro Murakami
IPC分类号： H01L21/00 , C23F1/00 , B44C1/22
CPC分类号： H01J37/32568 , H01J37/32082
摘要： At the time of plasma igniting or during plasma processing, only optimizing the distance between electrodes in each case caused a limitation to the prevention of charging damage. To resolve this, a novel plasma processing method employs a plasma processing apparatus which includes an upper electrode to which first high-frequency power is applied, a lower electrode to which second high-frequency power is applied, and a lift mechanism for controlling the spacing between the upper and lower electrodes. The first high-frequency power is applied to the upper electrode to cause plasma igniting. The method is adapted to make the spacing between the upper and lower electrodes larger at least at the time of plasma extinction than during plasma processing of a wafer on the lower electrode.
摘要翻译：在等离子体点火或等离子体处理时，仅在每种情况下优化电极之间的距离会对防止充电损坏造成限制。为了解决这个问题，一种新颖的等离子体处理方法采用等离子体处理装置，其包括施加第一高频功率的上电极，施加第二高频电力的下电极和用于控制间隔的升降机构在上下电极之间。将第一高频功率施加到上电极以引起等离子体点火。该方法适于使得上等电极和下电极之间的间隔至少在等离子体消光时比在下电极上的晶片的等离子体处理期间更大。

2. 发明申请

US20050000654A1 Apparatus and method for plasma processing 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20050000654A1
公开(公告)日：2005-01-06
申请号：US10796116
申请日：2004-03-10
申请人： Tamotsu Morimoto , Takahiro Murakami
发明人： Tamotsu Morimoto , Takahiro Murakami
IPC分类号： H01L21/3065 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32568 , H01J37/32082
摘要： At the time of plasma igniting or during plasma processing, only optimizing the distance between electrodes in each case caused a limitation to the prevention of charging damage. To resolve this, a novel plasma processing method employs a plasma processing apparatus which includes an upper electrode to which first high-frequency power is applied, a lower electrode to which second high-frequency power is applied, and a lift mechanism for controlling the spacing between the upper and lower electrodes. The first high-frequency power is applied to the upper electrode to cause plasma igniting. The method is adapted to make the spacing between the upper and lower electrodes larger at least at the time of plasma extinction than during plasma processing of a wafer on the lower electrode.
摘要翻译：在等离子体点火或等离子体处理时，仅在每种情况下优化电极之间的距离会对防止充电损坏造成限制。为了解决这个问题，一种新颖的等离子体处理方法采用等离子体处理装置，其包括施加第一高频功率的上电极，施加第二高频电力的下电极和用于控制间隔的升降机构在上下电极之间。将第一高频功率施加到上电极以引起等离子体点火。该方法适于使得上等电极和下电极之间的间隔至少在等离子体消光时比在下电极上的晶片的等离子体处理期间更大。

3. 发明授权

US07771850B2 Electromagnetic wave shielding laminate and display device employing it 失效
标题翻译：电磁波屏蔽层压板及其使用的显示装置
公开(公告)号：US07771850B2
公开(公告)日：2010-08-10
申请号：US12202953
申请日：2008-09-02
申请人： Tohru Yanagisawa , Tamotsu Morimoto
发明人： Tohru Yanagisawa , Tamotsu Morimoto
IPC分类号： B32B19/04
CPC分类号： H05K9/0096 , H01J2211/446
摘要： An electromagnetic wave shielding laminate comprising a transparent substrate and an electromagnetic wave shielding film formed thereon, characterized in that the electromagnetic wave shielding film has, sequentially from the substrate side, a first high refractive index layer made of a material having a refractive index of at least 2.0, a first oxide layer containing zinc oxide as the main component, an electroconductive layer containing silver as the main component, and a second high refractive index layer made of a material having a refractive index of at least 2.0.
摘要翻译：一种电磁波屏蔽层叠体，其特征在于，具有透明基板和形成在其上的电磁波屏蔽膜，其特征在于，所述电磁波屏蔽膜从基板侧依次具有由折射率为a的材料构成的第一高折射率层至少2.0，以氧化锌为主要成分的第一氧化物层，以银为主要成分的导电层和由折射率至少为2.0的材料制成的第二高折射率层。

4. 发明申请

US20100014163A1 ANTIREFLECTOR AND DISPLAY DEVICE 审中-公开
标题翻译：防反射和显示设备
公开(公告)号：US20100014163A1
公开(公告)日：2010-01-21
申请号：US12493262
申请日：2009-06-29
申请人： Tamotsu Morimoto , Michihisa Tomida
发明人： Tamotsu Morimoto , Michihisa Tomida
IPC分类号： G02B1/11 , B32B7/02
CPC分类号： G02B1/115 , G02B1/116 , Y10T428/24942
摘要： There are provided an antireflector having a simple layer structure, a high visible light transmittance, a low visible light reflectance and an excellent anti-fingerprint property, and a display device having an excellent viewability.An antireflector 1 including a substrate 10 and an antireflection film 20; the antireflection film 20 having a first high refractive index layer 22, a metal layer 24, a second high refractive index layer 26 and a low refractive index layer 28 disposed therein sequentially from a substrate side facing the substrate 1; the first high refractive index layer containing at least one member selected from the group consisting of tin, gallium and cerium in the form of an oxide, and indium in the form of an oxide; the metal layer containing silver and palladium and having a palladium content of from 3 to 20 mass % relative to the total amount of the metal layer (100 mass %); the second high refractive index layer containing at least one member selected from the group consisting of tin, gallium and cerium in the form of an oxide and indium in the form of an oxide. A display device including the antireflector 1 disposed on an observer' side of a display panel.
摘要翻译：提供了具有简单的层结构，高可见光透射率，低可见光反射率和优异的抗指纹性的抗反射器，以及具有优异的可视性的显示装置。包括基板10和抗反射膜20的抗反射器1; 具有从面向衬底1的衬底侧依次设置的第一高折射率层22，金属层24，第二高折射率层26和低折射率层28的抗反射膜20; 所述第一高折射率层含有选自氧化物形式的锡，镓和铈中的至少一种，氧化物形式的铟; 含有银和钯的金属层，相对于金属层的总量为100质量％，钯含量为3〜20质量％。所述第二高折射率层含有选自氧化物形式的锡，镓和铈和氧化物形式的铟中的至少一种。一种显示装置，包括设置在显示面板的观察者侧的防反射体1。

5. 发明授权

US06812151B1 Method of etching 失效
标题翻译：蚀刻方法
公开(公告)号：US06812151B1
公开(公告)日：2004-11-02
申请号：US09233073
申请日：1999-01-19
申请人： Kenichi Nanbu , Tamotsu Morimoto
发明人： Kenichi Nanbu , Tamotsu Morimoto
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01L21/3065
摘要： An etching method is carried out by an etching system comprising a gas supply port for supplying an etching gas, a plasma producing vessel defining a plasma producing chamber in which the etching gas is converted into a plasma to produce radicals, a reaction vessel connected to the plasma producing vessel and defining a reaction chamber of a diameter greater than that of the plasma producing chamber, a support table placed in the reaction chamber to support an object to be processed to be etched by the radicals flowing down thereto from the plasma producing chamber, and a vacuum exhaust system for evacuating the reaction chamber. The etching gas is supplied through the etching gas supply port at an etching gas supply rate of 8.4 sccm or above per a substantial volume of one liter of the reaction chamber.
摘要翻译：通过蚀刻系统进行蚀刻方法，该蚀刻系统包括用于供给蚀刻气体的气体供给口，限定等离子体生成室的等离子体生成容器，其中蚀刻气体被转换成等离子体以产生自由基，反应容器连接到等离子体产生容器并且限定直径大于等离子体产生室直径的反应室;支撑台，放置在反应室中，以支撑待处理对象被从等离子体产生室向下流动的自由基蚀刻，以及用于抽空反应室的真空排气系统。通过蚀刻气体供给口以相对于1升反应室的体积为8.4sccm以上的蚀刻气体供给量供给蚀刻气体。

6. 发明授权

US5567152A Heat processing apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5567152A
公开(公告)日：1996-10-22
申请号：US420075
申请日：1995-04-11
申请人： Tamotsu Morimoto
发明人： Tamotsu Morimoto
IPC分类号： H01L21/22 , C23C16/48 , C30B25/10 , C30B31/12 , H01L21/00 , H01L21/205 , H01L21/31 , H01L21/324 , F27D3/12
CPC分类号： H01L21/67109 , C23C16/481 , C30B25/10 , C30B31/12
摘要： A heat processing apparatus for subjecting heat processing to a wafer by heating includes a reaction tube for containing the wafers, a heating element provided around the reaction tube, for heating an inside of the reaction tube, a plurality of heat radiating members provided concentrically around the heating element with an airtight space between the heating element and an innermost one of the heat radiating members and airtight spaces between the heat radiating members, and a pressure-reducing device for reducing the pressure of these airtight spaces. In this heat processing apparatus, the pressures of the airtight spaces are reduced by the pressure-reducing means at least when the temperature of the inside of the reaction tube is increased.
摘要翻译：用于通过加热对晶片进行热处理的热处理装置包括：用于容纳晶片的反应管，设置在反应管周围的加热元件，用于加热反应管的内部;多个散热构件，其围绕加热元件与加热元件之间的气密空间和散热构件中的最内侧之间以及散热构件之间的气密空间，以及用于降低这些气密空间的压力的减压装置。在该热处理装置中，至少在反应管内部的温度升高时，通过减压装置降低气密空间的压力。

7. 发明申请

US20070298265A1 ELECTROCONDUCTIVE LAMINATE, AND ELECTROMAGNETIC WAVE SHIELDING FILM FOR PLASMA DISPLAY AND PROTECTIVE PLATE FOR PLASMA DISPLAY 失效
标题翻译：电磁层压板，等离子体显示用电磁波屏蔽膜和等离子体显示用保护板
公开(公告)号：US20070298265A1
公开(公告)日：2007-12-27
申请号：US11839839
申请日：2007-08-16
申请人： Tamotsu Morimoto , Masato Kawasaki , Makoto Hiramoto , Koichi Kanda , Susumu Nakagama
发明人： Tamotsu Morimoto , Masato Kawasaki , Makoto Hiramoto , Koichi Kanda , Susumu Nakagama
IPC分类号： B32B17/06 , B32B15/04
CPC分类号： H05K9/0096 , B32B17/10018
摘要： To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance. An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.
摘要翻译：为了提供导电性和可见光透明性优异的导电性层叠体，等离子体显示用电磁波屏蔽膜和具有优异的电磁波屏蔽性，宽透射/反射带和高可见光的等离子体显示用保护板透光率。包含基板11的导电层压板10和具有三层结构的导电膜12具有第一氧化物层12a，金属层12b和第二氧化物层12c，其从基板11侧依次层叠，或具有重复上述三层结构的3×n层结构（其中n为至少为2的整数），其中第一氧化物层12a包含“氧化锌”和“氧化钛或氧化铌”，金属层12b 是含有银的层，第二氧化物层12c含有氧化锌和氧化铝的混合物等。

8. 发明申请

US20070243327A1 Film forming method and apparatus 审中-公开
标题翻译：成膜方法和装置
公开(公告)号：US20070243327A1
公开(公告)日：2007-10-18
申请号：US11638672
申请日：2006-12-14
申请人： Song Kang , Tamotsu Morimoto , Yoshihiro Kato
发明人： Song Kang , Tamotsu Morimoto , Yoshihiro Kato
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/31633 , H01L21/31695
摘要： In the film forming method of the present invention, a substrate is first received in a processing vessel. Then, a film-forming gas including an organic silicon and an additive gas including a paraffin hydrocarbon gas and/or a hydrogen gas are introduced into the processing vessel, and the film-forming gas and the additive gas are then converted into plasma. In this manner, a carbon-hydrogen-added silicon oxide film (SiCOH film) is formed on the substrate. Alternatively, the film-forming gas is first introduced into the processing vessel containing the substrate and is then converted into plasma to form the SiCOH film on the substrate. Subsequently, the additive gas is introduced into the processing vessel and is then converted into plasma to post-treat the substrate having the SiCOH film formed thereon.
摘要翻译：在本发明的成膜方法中，首先在处理容器中接收基板。然后，将包含有机硅和包含石蜡烃气体和/或氢气的添加气体的成膜气体引入处理容器中，然后将成膜气体和添加气体转化为等离子体。以这种方式，在基板上形成碳氢氧化硅膜（SiCOH膜）。或者，首先将成膜气体引入含有基板的处理容器中，然后将其转化为等离子体，以在基板上形成SiCOH膜。随后，将添加气体引入处理容器中，然后将其转化为等离子体以对其上形成有SiCOH膜的基板进行后处理。

9. 发明授权

US06793834B2 Apparatus for and method of processing an object to be processed 有权
标题翻译：用于处理待处理物体的装置和方法
公开(公告)号：US06793834B2
公开(公告)日：2004-09-21
申请号：US10197859
申请日：2002-07-19
申请人： Tamotsu Morimoto
发明人： Tamotsu Morimoto
IPC分类号： H01L21302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3405
摘要： A magnetron reactive ion etching apparatus comprises: an electrode unit including electrodes facing each other through a semiconductor device; a high-frequency power source forming an electric field on the electrode unit; a dipole ring magnet; and a switching mechanism. The dipole ring magnet forms the first magnetic field state, including a magnetic field in a direction perpendicular to a direction of the electric field or in a direction parallel to the semiconductor device, and the second magnetic field state, including a magnetic field whose strength at the periphery of the surface of the semiconductor device is so satisfactory that an electron Larmor radius is larger than the mean free path of electrons. The first magnetic field state is switched to the second magnetic field state at a predetermined timing by the switching mechanism which is controlled by a controller.
摘要翻译：磁控管反应离子蚀刻装置包括：电极单元，其包括通过半导体器件彼此面对的电极; 在所述电极单元上形成电场的高频电源; 偶极环磁铁; 和切换机构。偶极环磁体形成第一磁场状态，包括在垂直于电场方向的方向上或在与半导体器件平行的方向上的磁场，以及第二磁场状态，包括磁场强度半导体器件的表面的周边如此令人满意，使得电子拉莫尔半径大于电子的平均自由程。第一磁场状态通过由控制器控制的切换机构在预定定时切换到第二磁场状态。

10. 发明申请

US20120250146A1 LAMINATED GLASS 审中-公开
标题翻译：层压玻璃
公开(公告)号：US20120250146A1
公开(公告)日：2012-10-04
申请号：US13526176
申请日：2012-06-18
申请人： Kazuhiro Tamai , Yuichi Hino , Tamotsu Morimoto , Takeomi Miyako , Koji Sasaki
发明人： Kazuhiro Tamai , Yuichi Hino , Tamotsu Morimoto , Takeomi Miyako , Koji Sasaki
IPC分类号： G02B5/22 , B82Y20/00
CPC分类号： B32B17/10761 , B32B17/10 , B32B17/10036 , B32B17/1011 , B32B17/10201 , B32B17/10633 , B32B17/10651 , B32B2367/00
摘要： The present invention relates to a laminated glass including: a pair of glass substrates facing with each other; a composite film arranged between the pair of glass substrates and including a resin film and an infrared reflective film which includes a high refractive index layer and a low refractive index layer and is formed on a light-incident-side main surface of the resin film; and a pair of adhesive sheets arranged between the pair of glass substrates and the composite film to bond the pair of glass substrates and the composite film, in which the laminated glass has the specific configuration.
摘要翻译：夹层玻璃技术领域本发明涉及一种夹层玻璃，其包括：一对面对的玻璃基板; 该复合膜布置在该对玻璃基板之间，并且包括树脂膜和包括高折射率层和低折射率层并且形成在树脂膜的光入射侧主表面上的红外反射膜; 以及一对粘合片，其布置在所述一对玻璃基板和所述复合膜之间，以结合所述一对玻璃基板和所述复合膜，其中所述夹层玻璃具有特定构造。

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