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    • 1. 发明授权
    • Image sensors and methods of manufacturing same including semiconductor
layer over entire substrate surface
    • 图像传感器及其制造方法,包括整个基板表面上的半导体层
    • US4803375A
    • 1989-02-07
    • US941192
    • 1986-12-12
    • Tamio SaitoSatoshi TakayamaYoshiyuki SudaOsamu ShimadaKen-ichi Mori
    • Tamio SaitoSatoshi TakayamaYoshiyuki SudaOsamu ShimadaKen-ichi Mori
    • H01L27/144H01L27/146H01J40/14H01L27/14
    • H01L27/14665H01L27/1446
    • An image sensor, comprising a semiconductor layer formed on at least a first region of a substrate; first electrodes arranged in line and electrically connected to the semiconductor layer of said first region; and second electrodes arranged in line and electrically connected to said semiconductor layer of said first region. The second electrodes are respectively formed as a common electrode, and each of the first electrodes, a portion of said second electrode facing the first electrode and the semiconductor layer positioned therebetween form a photo-sensing element. First wires respectively extend from said first electrodes to a second region of said substrate. An insulating layer is continuously formed on the first and second regions, covering said photo-sensing elements and the first wires as well as second wires formed in parallel on the insulating layer of said second region. The second wires are electrically connected to the first wires at through holes formed in the insulating layer.
    • 一种图像传感器,包括形成在基板的至少第一区域上的半导体层; 排列成直线并与所述第一区域的半导体层电连接的第一电极; 以及与所述第一区域的所述半导体层电连接并且电连接的第二电极。 第二电极分别形成为公共电极,并且每个第一电极,所述第二电极的面向第一电极的部分和位于其间的半导体层形成光敏元件。 第一导线分别从所述第一电极延伸到所述衬底的第二区域。 在第一和第二区域上连续地形成绝缘层,覆盖所述光敏元件和第一布线以及平行地形成在所述第二区域的绝缘层上的第二布线。 第二导线在形成在绝缘层中的通孔处电连接到第一布线。
    • 2. 发明授权
    • Thin film static induction transistor and method for manufacturing the
same
    • 薄膜静电感应晶体管及其制造方法
    • US4755859A
    • 1988-07-05
    • US911440
    • 1986-09-25
    • Yoshiyuki SudaSatoshi Takayama
    • Yoshiyuki SudaSatoshi Takayama
    • H01L29/772H01L29/78H01L29/06H01L29/34H01L29/80
    • H01L29/7722
    • A thin film static induction transistor comprises a first n type semiconductor layer provided on an insulative substrate and a second n type semiconductor layer mounted on the first layer. The second layer includes a first region having a first level top wall and a second region having a second level top wall lower that the first level top wall. The first and second regions are alternately arranged. A third semiconductor layer is provided on the first level top wall. A recess is formed which includes side walls of the third layers, side wall of the first regions and the second level top wall. A fourth semiconductor layer is deposited on the inner wall of the recess, and a gate electrode is provided on the fourth layer. The fourth layer consists of an intrinsic semiconductor layer or a semiconductor layer having a lower impurity concentration than the second layer.
    • 薄膜静电感应晶体管包括设置在绝缘基板上的第一n型半导体层和安装在第一层上的第二n型半导体层。 第二层包括具有第一层顶壁的第一区域和具有第一层顶壁的第二层顶壁的第二区域。 第一区域和第二区域交替布置。 在第一级顶壁上设置第三半导体层。 形成包括第三层的侧壁,第一区域的侧壁和第二水平顶壁的凹部。 第四半导体层沉积在凹槽的内壁上,栅电极设置在第四层上。 第四层由本征半导体层或具有比第二层低的杂质浓度的半导体层组成。