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1. 发明授权

US08410215B2 Thermoplastic resin composition and molded article obtained from the same 有权
标题翻译：热塑性树脂组合物和由其获得的模塑制品
公开(公告)号：US08410215B2
公开(公告)日：2013-04-02
申请号：US12438466
申请日：2007-08-23
申请人： Takuya Sano , Toshiyuki Hayakawa , Takeo Nakamura , Teruo Aoyama , Akihiko Okubo , Satoshi Kura
发明人： Takuya Sano , Toshiyuki Hayakawa , Takeo Nakamura , Teruo Aoyama , Akihiko Okubo , Satoshi Kura
IPC分类号： C08L67/04 , C08L53/02 , C08L53/00 , C08L47/00 , C08L23/26 , C08L23/02 , C08L23/00
CPC分类号： C08L51/06 , C08F8/04 , C08L23/02 , C08L23/0884 , C08L23/26 , C08L53/02 , C08L53/025 , C08L67/04 , C08L2666/26 , C08L2666/24 , C08L2666/02 , C08L2666/04 , C08F297/04 , C08F297/044
摘要： A thermoplastic resin composition contains (i) a polylactic acid, (ii) a polyolefin, and (iii) a compatibilizer (functional group-containing polymer that includes a functional group selected from functional groups X including a carboxyl group, an acid anhydride group, an epoxy group, a (meth)acryloyl group, an amino group, an alkoxysilyl group, a hydroxyl group, an isocyanate group, and an oxazoline group). The thermoplastic resin composition contains (iii-1) a functional group-containing hydrogenated diene polymer and (iii-2) a functional group-containing olefin polymer as the component (iii).
摘要翻译：热塑性树脂组合物含有（i）聚乳酸，（ii）聚烯烃，和（iii）增容剂（含有官能团的官能团，含有羧基的官能团X，酸酐基，环氧基，（甲基）丙烯酰基，氨基，烷氧基甲硅烷基，羟基，异氰酸酯基和恶唑啉基）。热塑性树脂组合物含有（iii-1）含官能团的氢化二烯聚合物和（iii-2）含官能团的烯烃聚合物作为组分（iii）。

2. 发明申请

US20090264591A1 THERMOPLASTIC RESIN COMPOSITION AND MOLDED ARTICLE OBTAINED FROM THE SAME 有权
标题翻译：热塑性树脂组合物和从其获得的模塑制品
公开(公告)号：US20090264591A1
公开(公告)日：2009-10-22
申请号：US12438466
申请日：2007-08-23
申请人： Takuya Sano , Toshiyuki Hayakawa , Takeo Nakamura , Teruo Aoyama , Akihiko Okubo , Satoshi Kura
发明人： Takuya Sano , Toshiyuki Hayakawa , Takeo Nakamura , Teruo Aoyama , Akihiko Okubo , Satoshi Kura
IPC分类号： C08L53/00
CPC分类号： C08L51/06 , C08F8/04 , C08L23/02 , C08L23/0884 , C08L23/26 , C08L53/02 , C08L53/025 , C08L67/04 , C08L2666/26 , C08L2666/24 , C08L2666/02 , C08L2666/04 , C08F297/04 , C08F297/044
摘要： A thermoplastic resin composition contains (i) a polylactic acid, (ii) a polyolefin, and (iii) a compatibilizer (functional group-containing polymer that includes a functional group selected from functional groups X including a carboxyl group, an acid anhydride group, an epoxy group, a (meth)acryloyl group, an amino group, an alkoxysilyl group, a hydroxyl group, an isocyanate group, and an oxazoline group). The thermoplastic resin composition contains (iii-1) a functional group-containing hydrogenated diene polymer and (iii-2) a functional group-containing olefin polymer as the component (iii).
摘要翻译：热塑性树脂组合物含有（i）聚乳酸，（ii）聚烯烃，和（iii）增容剂（含有官能团的官能团，含有羧基的官能团X，酸酐基，环氧基，（甲基）丙烯酰基，氨基，烷氧基甲硅烷基，羟基，异氰酸酯基和恶唑啉基）。热塑性树脂组合物含有（iii-1）含官能团的氢化二烯聚合物和（iii-2）含官能团的烯烃聚合物作为组分（iii）。

3. 发明申请

US20100267918A1 AMINO GROUP-CONTAINING CONJUGATED DIENE POLYMER AND METHOD FOR PRODUCING THE SAME, AND BLOCK COPOLYMER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：含氨基的含连接二烯基聚合物及其制备方法和嵌段共聚物及其制备方法
公开(公告)号：US20100267918A1
公开(公告)日：2010-10-21
申请号：US12740952
申请日：2008-10-01
申请人： Satoshi Kura , Toshiyuki Hayakawa , Kazuhiro Iso , Susumu Komiyama
发明人： Satoshi Kura , Toshiyuki Hayakawa , Kazuhiro Iso , Susumu Komiyama
IPC分类号： C08G81/00 , C08G77/26 , C08G73/00 , C08G63/00
CPC分类号： C08G69/10 , C08C19/44 , C08F36/04 , C08F4/488
摘要： A method for producing an amino group-containing conjugated diene polymer includes polymerizing a conjugated diene compound in the presence of a reaction product of 1,3-bis(diphenylethenyl)benzene or a derivative thereof and an organolithium compound to obtain a conjugated diene polymer, and reacting the conjugated diene polymer with a modifier.
摘要翻译：含氨基的共轭二烯系聚合物的制造方法包括在1,3-双（二苯基乙烯基）苯或其衍生物与有机锂化合物的反应产物的存在下使共轭二烯化合物聚合，得到共轭二烯系聚合物，并使共轭二烯聚合物与改性剂反应。

4. 发明授权

US08178641B2 Amino group-containing conjugated diene polymer and method for producing the same, and block copolymer and method for producing the same 有权
标题翻译：含氨基的共轭二烯聚合物及其制造方法，以及嵌段共聚物及其制造方法
公开(公告)号：US08178641B2
公开(公告)日：2012-05-15
申请号：US12740952
申请日：2008-10-01
申请人： Satoshi Kura , Toshiyuki Hayakawa , Kazuhiro Iso , Susumu Komiyama
发明人： Satoshi Kura , Toshiyuki Hayakawa , Kazuhiro Iso , Susumu Komiyama
IPC分类号： C08G81/00 , C08G77/26 , C08G73/00 , C08G63/00
CPC分类号： C08G69/10 , C08C19/44 , C08F36/04 , C08F4/488
摘要： A method for producing an amino group-containing conjugated diene polymer includes polymerizing a conjugated diene compound in the presence of a reaction product of 1,3-bis(diphenylethenyl)benzene or a derivative thereof and an organolithium compound to obtain a conjugated diene polymer, and reacting the conjugated diene polymer with a modifier.
摘要翻译：含氨基的共轭二烯系聚合物的制造方法包括在1,3-双（二苯基乙烯基）苯或其衍生物与有机锂化合物的反应产物的存在下使共轭二烯化合物聚合，得到共轭二烯系聚合物，并使共轭二烯聚合物与改性剂反应。

5. 发明授权

US08748282B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08748282B2
公开(公告)日：2014-06-10
申请号：US13169626
申请日：2011-06-27
申请人： Ryo Kubota , Nobutaka Nagai , Satoshi Kura
发明人： Ryo Kubota , Nobutaka Nagai , Satoshi Kura
IPC分类号： H01L29/72
CPC分类号： H01L28/91
摘要： A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.
摘要翻译：半导体器件通过在第一绝缘膜和覆盖在半导体衬底上的绝缘夹层延伸形成孔，通过对绝缘中间层的一部分特定的孔的内壁进行侧蚀，从而形成具有从边缘向孔的中心突出的第一绝缘膜的结构; 在所述第一绝缘膜的上表面，侧面和背面延伸并在所述孔的内壁和底面上方形成下电极膜; 在孔中填充保护膜; 在第一绝缘膜的顶表面和侧面上分别去掉下电极膜; 去除保护膜; 并在孔中形成圆柱形电容器。

6. 发明授权

US07985997B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07985997B2
公开(公告)日：2011-07-26
申请号：US12130096
申请日：2008-05-30
申请人： Ryo Kubota , Nobutaka Nagai , Satoshi Kura
发明人： Ryo Kubota , Nobutaka Nagai , Satoshi Kura
IPC分类号： H01L29/72
CPC分类号： H01L28/91
摘要： A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.
摘要翻译：半导体器件通过在第一绝缘膜和覆盖在半导体衬底上的绝缘夹层延伸形成孔，通过对绝缘中间层的一部分特定的孔的内壁进行侧蚀，从而形成具有从边缘向孔的中心突出的第一绝缘膜的结构; 在所述第一绝缘膜的上表面，侧面和背面延伸并在所述孔的内壁和底面上方形成下电极膜; 在孔中填充保护膜; 在第一绝缘膜的顶表面和侧面上分别去掉下电极膜; 去除保护膜; 并在孔中形成圆柱形电容器。

7. 发明申请

US20080296729A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080296729A1
公开(公告)日：2008-12-04
申请号：US12130096
申请日：2008-05-30
申请人： Ryo KUBOTA , Nobutaka Nagai , Satoshi Kura
发明人： Ryo KUBOTA , Nobutaka Nagai , Satoshi Kura
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/91
摘要： A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.
摘要翻译：半导体器件通过在第一绝缘膜和覆盖在半导体衬底上的绝缘夹层延伸形成孔，通过对绝缘中间层的一部分特定的孔的内壁进行侧蚀，从而形成具有从边缘向孔的中心突出的第一绝缘膜的结构; 在所述第一绝缘膜的上表面，侧面和背面延伸并在所述孔的内壁和底面上方形成下电极膜; 在孔中填充保护膜; 在第一绝缘膜的顶表面和侧面上分别去掉下电极膜; 去除保护膜; 并在孔中形成圆柱形电容器。

8. 发明授权

US08309414B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08309414B2
公开(公告)日：2012-11-13
申请号：US12805291
申请日：2010-07-22
申请人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
发明人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
IPC分类号： H01L27/088 , H01L21/8239
CPC分类号： H01L27/10894 , H01L21/823468 , H01L27/088 , H01L27/10873 , H01L29/6653
摘要： A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.
摘要翻译：第一晶体管包括第一栅极绝缘膜，第一栅电极和第一侧壁。第二晶体管包括第二栅极绝缘膜，第二栅电极和第二侧壁。电容元件连接到第二晶体管的源区和漏区的一侧。第一栅极绝缘膜具有与第二栅极绝缘膜相同的厚度，并且第一栅极电极具有与第二栅极电极的厚度相同的厚度。第二侧壁的宽度大于第一侧壁的宽度。

9. 发明申请

US20110042749A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110042749A1
公开(公告)日：2011-02-24
申请号：US12805291
申请日：2010-07-22
申请人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
发明人： Toru Kawasaki , Satoshi Kura , Mitsuo Nissa , Naotaka Kamishita
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L27/10894 , H01L21/823468 , H01L27/088 , H01L27/10873 , H01L29/6653
摘要： A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.
摘要翻译：第一晶体管包括第一栅极绝缘膜，第一栅电极和第一侧壁。第二晶体管包括第二栅极绝缘膜，第二栅电极和第二侧壁。电容元件连接到第二晶体管的源区和漏区的一侧。第一栅极绝缘膜具有与第二栅极绝缘膜相同的厚度，并且第一栅极电极具有与第二栅极电极的厚度相同的厚度。第二侧壁的宽度大于第一侧壁的宽度。

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